FT0414BD [ETC]

High Commutation TRIACs ; 高换向双向可控硅\n


型号：	FT0414BD
厂家：	ETC
描述：	High Commutation TRIACs 高换向双向可控硅\n 可控硅三端双向交流开关
文件：	总5页 (文件大小：153K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FT04...D

SURFACE MOUNT TRIAC

DPAK

(Plastic)

On-State Current

4 Amp

Gate Trigger Current

< 5 mA to < 35 mA

Off-State Voltage

200 V ÷ 600 V

MT2

MT1

This series of TRIACs uses a high performance

PNPN technology.

MT2

These devices are intended for AC control

applications using surface mount technology.

The high commutation performances combined with

high sensitivity, make them perfect in all applications

like solid state relays, home appliances, power tools,

small motor drives...

Absolute Maximum Ratings, according to IEC publication No. 134

SYMBOL

PARAMETER

RMS On-state Current

CONDITIONS

Min.

Max.

Unit

All Conduction Angle, T_C= 110 ºC

Half Cycle, 60 Hz

I_T(RMS)

Non-repetitive On-State Current

Fusing Current

5.1

I_TSM

I²t

Half Cycle, 50 Hz

A²s

t_p= 10 ms, Half Cycle

20 µs max.

I_GM

Peak Gate Current

Peak Gate Dissipation

20 µs max.

P_GM

P_G(AV)

di/dt

Gate Dissipation

20 ms max.

I_G= 2 x I_GTTr £ 200 ns, F = 120 Hz

T_j= 125 ºC

Critical rate of rise of on-state current

A/µs

T_j

T_stg

T_L

Operating Temperature

Storage Temperature

+125

+150

260

ºC

-40

Lead Temperature for Soldering

4.5 mm from case, 10s max.

SYMBOL

PARAMETER

VOLTAGE

Unit

Repetitive Peak Off State

Voltage

200

400

600

V_DRM

V_RRM

Jul - 03

FT04...D

SURFACE MOUNT TRIAC

Electrical Characteristics

Quadrant

Unit

SYMBOL

PARAMETER

CONDITIONS

SENSITIVITY

11 14

25 35

(1)

Q1÷Q3

µA

MAX

I_GT

Gate Trigger Current

V_D= 12 V_DC, R_L= 30W

T_j= 25 ºC

T_j= 125 ºC

T_j= 25 ºC

I_DRM/I_RRM

V_R= V_DRM

V_R= V_RRM

MAX

MIN

Off-State Leakage Current

(2)

V_to

T_j= 125 ºC

0.9

120

1.6

1.3

0.2

Threshold Voltage

Dynamic Resistance

On-state Voltage

(2)

R_d

(2)

V_TM

I_T= 5.5 Amp, tp = 380 µs, T_j= 25 ºC

V_D= 12 V_DC, R_L= 30W, T_j= 25 ºC

V_D= V_DRM, R_L= 3.3KW, T_j= 125 ºC

I_T= 100 mA , Gate open, T_j= 25 ºC

I_G= 1.2 IGT, T_j= 25 ºC

V_GT

V_GD

Gate Trigger Voltage

Gate Non Trigger Voltage

Holding Current

Q1÷Q3

(2)

I_H

I_L

MAX

10 15

10 20

15 30

Latching Current

Q1,Q3 MAX

MAX

V_D= 0.67 x V_DRM

Gate open

(2) Critical Rate of Voltage Rise

MIN 20 100 200

dv / dt

400 V/µs

T_j= 125 ºC

1.8 2.7 4.4

MIN

0.9 2.0 2.7

MIN

(2)

(dv/dt)c= 0.1 V/µs

(dv/dt)c= 10 V/µs

without snubber

T_j= 125 ºC

Tj = 125 ºC

(dI/dt)c

A/ms

Critical Rate of Current Rise

MIN

TYP

2.5

µs

t_gd

Gate Controlled

Delay Time

I_G= 2xI_GT, V_D= V_DRM

di_G/dt = 3 A/µs, I_TM= 5.5 A

Q1÷Q3

R_th(j-c)

Thermal Resistance

Junction-Case

ºC/W

2.6

Thermal Resistance

Junction-Ambient

R_th(j-a)

(1) Minimum I_GTis guaranted at 5% of I_GTmax.

(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.

PART NUMBER INFORMATION

00 TR

FAGOR

SCR

PACKAGING

FORMING

CASE

VOLTAGE

CURRENT

SENSITIVITY

Jul - 03

FT04...D

SURFACE MOUNT TRIAC

Fig. 1: Maximum power dissipation versus

RMS on-state current

Fig. 2: Correlation between maximum power dissipation

and maximum allowable temperatures (Tamb and Tcase)

for different thermal resistances heatsink + contact.

P (W)

6.0

P (W)

T case (ºC)

6.0

5.0

4.0

3.0

2.0

1.0

0.0

Rth=5 ºC/W

Rth=10 ºC/W

Rth=0 ºC/W

a = 180 º

-95

5.0

a = 120 º

Rth=15 ºC/W

4.0

-100

a = 90 º

3.0

a = 60 º

2.0

-105

-110

180 º

a = 30 º

1.0

0.0

a = 180 º

(A)

T(RMS)

Tamb (ºC)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

10 20 30 40 50 60 70 80 90 100 110

Fig. 3: RMS on-state current versus ambient

temperature

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

(A)

K = [(Zth(j-c) / Rth (j-c)]

T(RMS)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.00

Rth(j-a) = Rth(j-c)

0.50

Rth(j-a) = 55 ºC/W

S(Cu) = 1.75 cm

0.20

0.10

a = 180 º

tp (s)

Tamb (ºC)

1E-3

1E-2

1E-1

1E+0

10 20 30 40 50 60 70 80 90 100 110

Fig. 6: Non repetitive surge peak on-state

current versus number of cycles.

Fig. 5: Relative variation of gate trigger current

and holding current versus junction temperature

(typical values).

(A)

TSM

, I (Tj) / I , I (Tj = 25 ºC)

GT GT

2.5

2.0

1.5

1.0

0.5

0.0

Tj initial = 25 ºC

F = 50 Hz

Tj (ºC)

Number of cycles

-40 -20

20 40 60 80 100 120

100

1000

Jul - 03

FT04...D

SURFACE MOUNT TRIAC

Fig. 7: Non repetitive surge peak on-state

current for a sinusoidal pulse with width:

tp £ 10 ms, and corresponding value of I²t.

Fig. 9:Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness: 35 µm).

Fig. 8: On-state characteristics (maximum

values).

(A). I²t (A²s)

(ºC/W)

(A)

th(j-a)

TSM

100

30.0

10.0

Tj initial = 25 ºC

TSM

Tj max

Vto = 0.95V

Rd = 0.140mW

Tj = Tj max.

I²

Tj = 25 ºC

1.0

0.1

)

S(Cu) (cm

(V)

tp(ms)

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

8 10 12 14 16 18 20

Jul - 03

FT04...D

SURFACE MOUNT TRIAC

DPAK TO 252-AA

PACKAGE MECHANICAL DATA

DIMENSIONS

REF.

Milimeters

Nominal

2.3 0.18

0.12

2º

8º

Min.

2.18

0.64

0.46

Max.

2.39

0.127

0.89

0.61

0.56

0.75 0.1

ø1x0.15

2º

8º

0.8 0.013

6.1 0.1

5.97

5.21

6.35

5.20

6.22

5.52

6.73

5.46

6.58 0.14

5.36 0.1

2.28BSC

9.90 0.15

1.6

2º

8º

9.40

1.40

2.55

0.46

0.89

0.64

10.41

1.78

2.74

0.58

1.27

1.02

4.57 Typ.

0.013

1.067

2.6 0.05

0.5 0.013

1.20 0.05

0.83 0.1

Marking: type number

Weight: 0.2 g

FOOT PRINT

6.7

1.6

2.3

Jul - 03

FT0414BD [ETC]

相关型号：

FT0414BH

FT0414BI

FT0414DD

FT0414DH

FT0414DI

FT0414MD

FT0414MH

FT0414MI

FT0611BH

FT0611DH

FT0611MH

FT0614BH