FTA4N65 [ETC]
4A/650V N-Channel MOSFET TO-220 TO-220F; 4A / 650V N沟道MOSFET TO- 220 TO- 220F
| 型号： | FTA4N65 |
| 厂家： | 
ETC |
| 描述： | 4A/650V N-Channel MOSFET TO-220 TO-220F |
| 文件： | 总9页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FTP04N65
FTA04N65
N-Channel MOSFET
Applications:
• Adaptor
• Charger
VDSS
650V
RDS(ON) (Max.)
2.35 Ω
ID
4.0A
• SMPS Standby Power
• LCD Panel Power
Features:
• Lead Free
D
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
G
G
D
G
D
S
S
Ordering Information
TO-220
TO-220F
S
Not to Scale
Not to Scale
PART NUMBER
FTP04N65
PACKAGE
BRAND
FTP04N65
FTA04N65
TO-220
FTA04N65
TO-220F
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
VDSS
Parameter
Drain-to-Source Voltage
FTP04N65
FTA04N65
Units
V
(NOTE *1)
(NOTE *2)
650
ID
Continuous Drain Current
Continuous Drain Current
PulsedDrainCurrent,VGS@ 10V
Power Dissipation
4.0
4.0*
ID@ 100 oC
Figure 3
A
IDM
Figure 6
100
24
W
W/ oC
V
PD
Derating Factor above 25 oC
0.80
0.19
VGS
EAS
Gate-to-Source Voltage
± 30
250
Single Pulse Avalanche Engergy
L=3.0 mH, ID=4.1 Amps
mJ
IAS
Pulsed Avalanche Rating
Figure 8
3.0
dv/dt
Peak Diode Recovery dv/dt
Maximum Temperature for Soldering
(NOTE *3)
V/ns
oC
TL
TPKG
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
300
260
Operating Junction and Storage
Temperature Range
TJ and TSTG
-55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
FTP04N65 FTA04N65
Units
oC/W
Test Conditions
Water cooled heatsink, P adjusted for
D
1.25
62
5.2
62
a peak junction temperature of +150 oC
1 cubic foot chamber, free air.
.
FTP04N60/FTA04N60 REV. A. April. 2006
©2006 InPower Semiconductor Co., Ltd.
OFF Characteristics T =25 oC unless otherwise specified
J
Symbol
BVDSS
Parameter
Min.
650
Typ.
--
Max.
--
Units
V
Test Conditions
Drain-to-Source Breakdown Voltage
VGS=0V, ID=250µA
Reference to 25 oC,
BreakdownVoltage Temperature
Coefficient, Figure 11.
V/ oC
--
--
0.71
--
--
∆BVDSS/∆ TJ
ID=250µA
25
VDS=650V, VGS=0V
IDSS
Drain-to-Source Leakage Current
µA
VDS=520V, VGS=0V
TJ=125oC
--
--
250
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
--
--
--
--
100
VGS=+30V
VGS= -30V
IGSS
nA
-100
ON Characteristics T =25 o unless otherwise specified
C
J
Symbol
RDS(ON)
VGS(TH)
gfs
Parameter
Min.
Typ.
1.8
--
Max.
2.35
4.0
Units
Test Conditions
VGS=10V, ID=2.4A
Static Drain-to-Source On-Resistance
Figure 9 and 10.
--
Ω
(NOTE *4)
,
250µA
ID
=
GS
Gate Threshold Voltage, Figure 12.
Forward Transconductance
2.0
--
VDS
V
=
V
S
VDS=15V, ID=4.0A
(NOTE *4)
3.8
--
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Parameter
Input Capacitance
Min.
--
Typ.
660
85
Max.
Units
Test Conditions
VGS=0V
--
--
VDS=25V
Coss
Output Capacitance
--
pF
f =1.0MHz
Figure 14
Crss
Reverse Transfer Capacitance
Total Gate Charge
--
--
--
18
23
--
--
--
Qg
V =325V
DD
I
D=4.0A
Qgs
Gate-to-Source Charge
4.3
nC
V
VGS=10
Qgd
Figure 15
Gate-to-Drain (“Miller”) Charge
--
10.6
--
Resistive Switching Characteristics Essentially independent of operating temperature
Symbol
td(ON)
Parameter
Turn-on Delay Time
Min.
--
Typ.
21
Max.
Units
Test Conditions
VDD=325V
ID=4.0A
--
--
--
trise
Rise Time
--
21
ns
td(OFF)
tfall
Turn-Off Delay Time
--
44
VGS=10V
RG=12Ω
Fall Time
--
40
--
FTP04N60/FTA04N60 REV. A. April. 2006
Page 2 of 9
©2006 InPower Semiconductor Co., Ltd.
Source-Drain Diode Characteristics T =25 oC unless otherwise specified
c
Symbol
IS
Parameter
Min.
--
Typ.
Max.
Units
Test Conditions
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
--
--
4.0
16.0
1.5
A
A
Integral pn-diode
in MOSFET
ISM
--
--
--
--
VSD
IS=4.0A, VGS=0V
VGS=0V
--
V
trr
Reverse Recovery Time
250
1.6
380
2.4
ns
Qrr
Reverse Recovery Charge
IF=4.0A, di/dt=100 A/µs
µC
Notes:
*1. T = +25 oC to +150 oC.
J
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. I = 4.0A di/dt < 100 A/µs, V < BV
, T =+150 oC.
SD
DD
DSS
J
*4. Pulse width < 380µs; duty cycle < 2%.
FTP04N60/FTA04N60 REV. A. April. 2006
Page 3 of 9
©2006 InPower Semiconductor Co., Ltd.
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
Duty Factor
50%
1.000
0.100
20%
10%
PDM
2%
t1
t2
1%
NOTES:
DUTY FACTOR: D=t1/t2
PEAK T =P x Z x R
0.010
0.001
single pulse
+T
C
J
DM
θJC θJC
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
tp, Rectangular Pulse Duration (s)
Maximum Power Dissipation
vs Case Temperature
F ig u r e 3 . Maximum Continuous Drain Current
vs Case Temperature
Figure 2.
100
90
4.5
4.0
3.5
3.0
2.5
2.0
1.5
80
70
60
50
40
30
20
10
0
1.0
0.5
0
75
125
50
25
100
25
50
75
100
125
150
150
T , Case Temperature (o
)
C
T , Case Temperature (o
)
C
C
C
F ig u r e 5 .
Figure 4. Typical Output Characteristics
Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
10
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
PULSE DURATION = 250 µS
DUTY FACTOR = 0.5% MAX
PULSE DURATION = 250 µS
DUTY FACTOR = 0.5% MAX
T
= 25oC
T
= 25 oC
C
C
I
I
= 4A
= 2A
D
D
VGS = 5.25V
VGS = 5.0V
VGS = 4.5V
1
0
5
15
20
25
30
10
4
5
6
7
8
9
10 11 12 13 14 15
VDS, Drain-to-Source Voltage ( )
VGS, Gate-to-Source Voltage ( )
V
V
FTP04N60/FTA04N60 REV. A. April. 2006
Page 4 of 9
©2006 InPower Semiconductor Co., Ltd.
Figure 6. Maximum Peak Current Capability
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 – T
C
I = I
----------------------
125
25
10
V
= 10V
GS
1
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1E+0
10E+0
tp, Pulse Width (s)
Unclamped Inductive
Switching Capability
F ig u r e 8 .
Figure 7. Typical Transfer Characteristics
12
10
8
100.0
10.0
1.0
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
V
= 10 V
DS
STARTING T = 25o
C
J
6
STARTING T = 150o
J
C
4
+150 oC
+25 oC
-55 oC
If R= 0: t = (L×I )/(1.3BV
AV AS
-V )
DSS DD
2
If R≠ 0: t = (L/R) ln[I ×R)/(1.3BV
-V )+1]
AV AS DSS DD
R equals total Series resistance of Drain circuit
0.1
0
6.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.5
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
VGS, Gate-to-Source Voltage ( )
tAV, Time in Avalanche (s)
V
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
Figure 10. Typical Drain-to-Source
e
Resistanc
ON
vs Junction Temperature
3.5
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
PULSE DURATION = 2 µs
DUTY CYCLE = 0.5% MAX
T
C
=25°C
3.0
2.5
2.0
1.5
1.0
V
= 10V
GS
V
= 20V
GS
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
= 10V, I = 4.0A
V
D
GS
0
2
4
6
8
10
12
-75 -50 -25
0
25
50
75
100 125 150
TJ, Junction Temperature (o
)
C
ID, Drain Current (A)
FTP04N60/FTA04N60 REV. A. April. 2006
Page 5 of 9
©2006 InPower Semiconductor Co., Ltd.
Figure 12. Typical Threshold Voltage vs
Junction Temperature
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
V
= 0V
V
= V
DS
GS
= 250 µA
GS
I = 250 µA
D
I
D
-75 -50 -25 0.0
25
50
75
100 125 150
-75
-25 0.0 25
50
75 100 125
-50
150
TJ, Junction Temperature (oC)
TJ, Junction Temperature (oC)
Figure 14. Typical Capacitance vs
Figure 13. Maximum Forward Bias Safe
Operating Area
10000
1000
100
10
100.0
10.0
1.0
T
= MAX RATED, T = 25 oC
J
C
Single Pulse
10µs
C
iss
C
oss
V
= 0V, f = 1MHz
GS
C
rss
C
C
C
= C + C
gs gd
iss
OPERATION IN THIS AREA MAY
≅ C + C
oss
rss
ds
gd
BE LIMITED BY R
DS(ON)
= C
gd
0.1
1
10
100
1000
0.1
1
10
100
1
1000
VDS, Drain Voltage (V)
V
DS, Drain-to-Source Voltage (V)
Figure 15. Typical Gate Charge
vs Gate-to-Source Voltage
Figure 16. Typical Body Diode Transfer
Characteristics
12
10
50
45
40
35
V
V
V
= 163V
= 325V
= 488V
DS
DS
DS
8
6
30
25
20
15
10
5
+150oC
-55 oC
4
2
0
I
= 4.0A
V
= 0V
D
GS
0
0
5
10
15
20
25
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Q
G ,Total Gate Charge (nC)
VSD, Source-to-Drain Voltage (V)
FTP04N60/FTA04N60 REV. A. April. 2006
Page 6 of 9
©2006 InPower Semiconductor Co., Ltd.
Test Circuits and Waveforms
V
DS
I
D
I
D
V
DS
V
Miller
GS
Region
V
GS
V
DD
D.U.T.
V
GS(TH)
1 mA
Q
Q
gs
gd
Q
g
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
V
DS
R
L
90%
V
DS
V
GS
V
DD
R
D.U.T.
G
10%
t
V
GS
t
t
t
d(OFF)
fall
d(ON)
rise
Figure 19. Resistive Switching Test Circuit
Figure 20. Resistive Switching Waveforms
FTP04N60/FTA04N60 REV. A. April. 2006
Page 7 of 9
©2006 InPower Semiconductor Co., Ltd.
Test Circuits and Waveforms
di/dt adj.
Current
Pump
di/dt = 100A/µA
I
D
Double Pulse
D.U.T.
V
DD
Q
rr
L
t
rr
I
D
Figure 22. Diode Reverse Recovery Waveform
Figure 21. Diode Reverse Recovery Test Circuit
BV
DSS
Series Switch
(MOSFET)
L
I
AS
BV
DSS
V
DD
V
D.U.T.
DD
Commutating
Diode
0
t
AV
V
50Ω
GS
I
AS
V
t
GS
p
2
I
L
AS
E
=
AS
2
Figure 23. Unclamped Inductive Switching Test Circuit
Figure 24. Unclamped Inductive Switching Waveforms
FTP04N60/FTA04N60 REV. A. April. 2006
Page 8 of 9
©2006 InPower Semiconductor Co., Ltd.
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c. whose failure to perform when properly used in accordance with instructions
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FTP04N60/FTA04N60 REV. A. April. 2006
Page 9 of 9
©2006 InPower Semiconductor Co., Ltd.
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