FX6ASH06 [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA ; 晶体管| MOSFET | P沟道| 60V V( BR ) DSS | 6A I( D) | TO- 252AA\n
FX6ASH06
型号: FX6ASH06
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
晶体管| MOSFET | P沟道| 60V V( BR ) DSS | 6A I( D) | TO- 252AA\n

晶体 晶体管
文件: 总7页 (文件大小:440K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

FX6ASH2

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
ETC

FX6ASH3

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
ETC

FX6ASJ-03

High-Speed Switching Use Pch Power MOS FET
RENESAS

FX6ASJ-03

Power Field-Effect Transistor, 6A I(D), 30V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-3, 3 PIN
POWEREX

FX6ASJ-03-T13

High-Speed Switching Use Pch Power MOS FET
RENESAS

FX6ASJ-03_06

High-Speed Switching Use Pch Power MOS FET
RENESAS

FX6ASJ-06

HIGH-SPEED SWITCHING USE
MITSUBISHI

FX6ASJ-06

Pch POWER MOSFET HIGH-SPEED SWITCHING USE
POWEREX

FX6ASJ-06

High-Speed Switching Use Pch Power MOS FET
RENESAS

FX6ASJ-06-T13

High-Speed Switching Use Pch Power MOS FET
RENESAS

FX6ASJ-06-T23

6A, 60V, 0.37ohm, P-CHANNEL, Si, POWER, MOSFET, MP-3A, SC-63, 3 PIN
RENESAS

FX6ASJ-2

HIGH-SPEED SWITCHING USE
MITSUBISHI