GFU25N03 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-251AA ; 晶体管| MOSFET | N沟道| 30V V（ BR ） DSS | 38A I（ D） | TO- 251AA\n
| 型号： | GFU25N03 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-251AA
|
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GFU25N03
New Product
Vishay Semiconductor
N-Channel Enhancement-Mode MOSFET
VDS 30V
DS(ON) 16.5mΩ
R
ID 38A
D
TO-251 (IPAK)
G
0.265 (6.73)
0.255 (6.48)
0.094 (2.39)
0.087 (2.21)
0.214 (5.43)
0.206 (5.23)
0.023 (0.58)
0.018 (0.46)
S
D
0.050 (1.27)
0.035 (0.89)
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
0.245 (6.22)
0.235 (5.97)
G
S
• Low Gate Charge
Mechanical Data
Case: JEDEC TO-251 molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
0.375 (9.53)
0.350 (8.89)
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
0.035 (0.89)
0.028 (0.71)
0.102 (2.59) 0.023 (0.58)
0.078 (1.98) 0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
±
VGS
20
Continuous Drain Current
TJ = 150°C
TC = 25°C
TC = 70°C
38
ID
30
80
A
Pulsed Drain Current(1)
IDM
T
T
C = 25°C
C = 70°C
38
24
2.5
Power Dissipation
TJ = 150°C
W
PD
TA = 25°C(2)
Operating Junction and Storage Temperature Range
TJ, Tstg
RθJC
–55 to 150
°C
Junction-to-Case Thermal Resistance
3.3
50
°C/W
°C/W
Junction-to-Ambient Thermal Resistance(2)
RθJA
Notes: (1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in2 2 oz.. Cu PCB (FR-4 material)
Document Number 74572
17-Dec-01
www.vishay.com
1
GFU25N03
Vishay Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250µA
30
0.8
–
–
–
–
V
V
VDS = VGS, ID = 250µA
2.5
±
±
VGS
=
20V, VDS = 0V
–
100
1
nA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VDS ≥ 5V, VGS = 10V
VGS = 10V, ID = 19A
VGS = 4.5V, ID = 15A
VDS = 5V, ID = 19A
–
–
Zero Gate Voltage Drain Current
On-State Drain Current(1)
IDSS
ID(on)
RDS(on)
gfs
µA
A
–
–
10
–
80
–
–
12.5
19
25
16.5
25
–
Drain-Source On-State Resistance(1)
mΩ
S
–
Forward Transconductance(1)
–
Dynamic
VDS = 15V, VGS = 5V,ID = 19A
–
–
–
–
–
–
–
–
–
–
–
11
22
14
28
–
Total Gate Charge
Qg
nC
VDS = 15V, ID = 19A
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
3.4
3.4
10
–
Turn-On Delay Time
18
25
60
10
–
VDD = 15V, ID = 1A
Turn-On Rise Time
14
VGEN = 10V, RG = 6Ω
ns
Turn-Off Delay Time
td(off)
tf
38
Turn-Off Fall Time
6
Input Capacitance
Ciss
Coss
Crss
1173
199
112
VDS = 15V, VGS = 0V
f = 1.0MHZ
Output Capacitance
–
pF
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage(1)
Continuous Source Current (Diode Conduction)
–
VSD
IS
IS = 19A, VGS = 0V
–
–
–
0.9
–
1.2
30
V
A
Notes: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
VDD
ton
toff
Switching
Test Circuit
Switching
td(on)
RD
td(off)
tr
90%
tf
90 %
VIN
Waveforms
D
VOUT
10%
10%
Output, VOUT
VGEN
INVERTED
RG
DUT
G
90%
50%
50%
Input, VIN 10%
S
PULSE WIDTH
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2
Document Number 74572
17-Dec-01
GFU25N03
Vishay Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
Fig. 2 – Transfer Characteristics
40
40
30
VDS = 10V
VGS = 4.0V, 4.5V, 5.0V, 6V, 10V
30
3.5V
20
20
10
0
3.0V
TJ = 125°C
--55°C
10
VGS = 2.5V
25°C
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
4.5
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage vs.
Temperature
Fig. 4 – On-Resistance vs.
Drain Current
1.4
1.2
1
0.025
0.02
ID = 250µA
VGS = 4.5V
0.015
0.8
VGS = 10V
0.01
0.6
0.4
0.005
--50
--25
0
25
50
75
100
125
150
0
10
20
30
40
ID -- Drain Current (A)
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance vs.
Junction Temperature
1.8
VGS = 10V
ID = 19A
1.6
1.4
1.2
1
0.8
0.6
--50 --25
0
25
50
75
100
125
150
TJ -- Junction Temperature (°C)
Document Number 74572
17-Dec-01
www.vishay.com
3
GFU25N03
Vishay Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs.
Gate-to-Source Voltage
Fig. 7 – Gate Charge
0.07
10
8
VDS = 15V
ID = 19A
ID = 19A
0.06
0.05
0.04
6
0.03
4
TJ = 125°C
0.02
2
25°C
0.01
0
0
2
4
6
8
10
0
4
8
12
16
20
24
Qg -- Gate Charge (nC)
VGS -- Gate-to-Source Voltage (V)
Fig. 9 – Source-Drain Diode
Forward Voltage
Fig. 8 – Capacitance
100
10
1500
1200
900
VGS = 0V
f = 1MHZ
VGS = 0V
Ciss
TJ = 125°C
1
600
300
25°C
--55°C
0.1
Coss
Crss
0.01
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
25
30
VDS -- Drain-to-Source Voltage (V)
VSD -- Source-to-Drain Voltage (V)
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4
Document Number 74572
17-Dec-01
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