GS8550BU/E6 [ETC]
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA ; 晶体管| BJT | PNP | 25V V（ BR ） CEO | 800MA I（C ） | TO- 226AA\n
| 型号： | GS8550BU/E6 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA
|
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GS8550xU
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-226AA (TO-92)
Features
0.142 (3.6)
0.181 (4.6)
• PNP Silicon Epitaxial Planar Transistors for amplifier
applications. Especially suitable for low power output
stages such as portable radios in class-B push-pull
operation.
• Complementary to GS8050xU
• The “x” in the part number can be B, C or D, depending
on the current gain.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
max.
0.022 (0.55)
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
–40
V
–25
V
–6
V
Collector Current
–800
mA
mW
°C/W
°C
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ptot
625(1)
200(1)
150
RθJA
Tj
Storage Temperature Range
TS
–55 to +150
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88194
10-May-02
www.vishay.com
1
GS8550xU
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Current Gain
VCE = –1V, IC = –5mA
VCE = –1V, IC = –100mA
45
135
—
Current Gain Group B
85
120
160
—
—
—
160
200
300
C
D
hFE
—
VCE = –1V, IC = –800mA
IC = –2mA, IB = 0
—
–25
–40
–6
—
30
—
—
—
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
V
V
IC = –100µA, IE = 0
IE = –100µA, IC = 0
VCB = –35V, IE = 0
VEB = –6V, IC = 0
—
—
—
—
V
—
–100
–100
—
nA
nA
V
Emitter Cut-off Current
IEBO
—
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
VCE(sat) IC = –800mA, IB = –80mA
—
–0.51
–1.25
–0.66
VBE(sat)
VBE(on)
IC = –800mA, IB = –80mA
VCE = –1V, IC = –10mA
—
—
V
—
–1.0
V
VCB = –10V, IE = 0
ƒ = 1 MHz
Output Capacitance
COB
—
—
15
—
—
pF
Gain-Bandwidth Product
ƒT
VCE = –10V, IC = –50mA
100
MHz
www.vishay.com
2
Document Number 88194
10-May-02
相关型号：
GS8550T
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
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GS8550T/E6
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
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