GS9013H/E7 [ETC]

BJT ; BJT\n
GS9013H/E7
型号: GS9013H/E7
厂家: ETC    ETC
描述:

BJT
BJT\n

文件: 总2页 (文件大小:21K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GS9013  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistors (NPN)  
TO-226AA ( TO-92)  
0.142 (3.6)  
0.181 (4.6)  
Features  
NPN Silicon Epitaxial Planar Transistors for switching  
and amplifier applications. Especially suitable for AF-  
driver stages and low power output stages such as  
portable radios in class-B push-pull operation.  
• Complementary to GS9012  
Mechanical Data  
Case: TO-92 Plastic Package  
Weight: approx. 0.18g  
Packaging Codes/Options:  
E6/Bulk- 5K per container, 20K per box  
E7/4K per Ammo mag., 20K per box  
max.  
0.022 (0.55)  
0.098 (2.5)  
Bottom  
View  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
20  
V
5
V
Collector Current  
500  
mA  
mW  
°C/W  
°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
625(1)  
200(1)  
150  
RθJA  
Tj  
Storage Temperature Range  
TS  
55 to +150  
°C  
Notes:  
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case  
Document Number 88196  
10-May-02  
www.vishay.com  
1
GS9013  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Current Gain Group D  
VCE = 1V, IC = 50mA  
64  
78  
96  
112  
144  
91  
E
F
G
H
112  
135  
166  
202  
DC Current Gain  
hFE  
VCE = 1V, IC = 500mA  
IC = 1mA, IB = 0  
40  
20  
40  
5
120  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
V
V
IC = 100µA, IE = 0  
IE = 100µA, IC = 0  
VCB = 25V, IE = 0  
V
0.6  
100  
100  
0.6  
1.2  
0.7  
nA  
nA  
V
Emitter Cut-off Current  
IEBO  
VEB = 3V, IC = 0  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
IC = 500mA, IB = 50mA  
IC = 500mA, IB = 50mA  
VCE = 1V, IC = 10mA  
0.16  
0.91  
0.67  
V
V
www.vishay.com  
2
Document Number 88196  
10-May-02  

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