GVD1217-001 [ETC]
SUPER HYPERABRUPT TUNING VARACTOR DIODES; 超级超突变调谐变容二极管
| 型号： | GVD1217-001 |
| 厂家： | 
ETC |
| 描述： | SUPER HYPERABRUPT TUNING VARACTOR DIODES |
| 文件： | 总12页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ENGINEERING BULLETIN
Sprague-Goodman
SG-950
VARACTOR DIODES
Sprague-Goodman Electronics, Inc.
1700 SHAMES DRIVE, WESTBURY, NY 11590
TEL: 516-334-8700 • FAX: 516-334-8771
E-MAIL: info@spraguegoodman.com
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
• High Q
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
APPLICATIONS
• TCXOs, VCXOs
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
• Low voltage wireless open loop VCOs
Total
Capacitance
CT (pF) at –2 V
Total
Capacitance
CT (pF) at –7 V
typ
Total
Capacitance
CT (pF) at –10 V
Model Number
Q min
at –2 V
Common
Cathode
min
max
min
max
(10 MHz)
Single
46
100
68
150
6.1
13.0
4.2
8.6
5.2
10.6
75
50
GVD1401-001
GVD1404-001
—
—
TOP VIEW
500
3
3
0.031
0.80
TYP
0.035
0.90
TYP
1
2
1
2
(SINGLE)
(COMMON CATHODE)
0.079
2.0
0.115 0.005
2.93 0.13
100
50
0.038 0.003
0.96 0.065
0.037
0.95
C (pF)
T
0.037
0.95
0.051 0.004
1.3 0.1
0.091 0.008
2.3 0.2
PAD LAYOUT
0.021 0.003
0.53 0.08
0.075 0.005
1.91 0.13
GVD1404-001
GVD1401-001
0.040 0.007
1.03 0.18
10
5
0.016 0.002
0.41 0.04
TYP
0.0047 0.0013
0.12 0.033
TYP
0.5
1
2
3
4
5
6
10
20
30
50
0.007 0.003
0.18 0.08
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
2
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARAC TOR DIODES
FEATURES
• Lo w vo lta g e wire le ss p ha se lo c ke d lo o p VC O s
• Pha se shifte rs
• Me sa e p ita xia l silic o n c o nstruc tio n
• Silic o n d io xid e p a ssiva te d
• Sup e rio r m id ra ng e line a r c ha ra c te ristic s
• Hig h tuning ra tio s
SPEC IFICATIO NS
Re ve rse b re a kd o wn vo lta g e a t 10 µA DC
(a t 25°C ): 12 V m in
• Hig h Q
Ma xim um re ve rse le a ka g e c urre nt a t –10 V
(a t 25°C ): 0.05 µA DC
• Ava ila b le in c o m m o n c a tho d e Style
• Ava ila b le in c hip fo rm (a d d suffix -000)
De vic e d issip a tio n a t 25°C : 250 m W (d e ra te d
line a rly to ze ro a t +125°C )
APPLICATIO NS
• TC XO s, VC XO s
O p e ra ting junc tio n te m p e ra ture : –55°C to +125°C
Sto ra g e te m p e ra ture : –55°C to +125°C
• Lo w vo lta g e wire le ss o p e n lo o p VC O s
C a p a c ita nc e
Ra tio
C a p a c ita nc e
Mo d e l Num b e r
Ra tio
To ta l
C a p a c ita nc e
Q m in
a t –4 V
C
T a t –1 V
C T a t –1 V
C T a t –6 V
C T (p F) a t –1 V
C T a t –3 V
C o m m o n
C a tho d e
m in
m a x
(50 MHz)
Sing le
m in
m a x
m in
m a x
3.00
5.85
10.35
15.50
45.00
3.60
7.15
12.65
18.50
54.00
1.4
1.6
1.6
1.6
1.6
1.9
2.0
2.0
2.0
2.0
2.6
2.8
2.9
3.0
3.0
3.3
3.4
3.4
3.5
3.5
1500
1200
1000
900
G VD20433-001
G VD20434-001
G VD20435-001
G VD20436-001
G VD20437-001
G VD20433-004
G VD20434-004
G VD20435-004
G VD20436-004
---
750
TOP VIEW
3
3
0.031
0.80
100.0
50.0
TYP
0.035
0.90
TYP
1
2
1
2
(SINGLE)
(COMMON CATHODE)
0.079
2.0
C
(p F)
10.0
5.0
T
0.115 ± 0.005
2.93 0.13
±
0.038 ± 0.003
0.96 0.065
±
0.037
0.95
0.037
0.95
0.051 ± 0.004
1.3 0.1
0.091 ± 0.008
2.3 0.2
G VD20436-001
G VD20435-001
±
±
3.0
2.0
PAD LAYO UT
0.021 ± 0.003
0.53 0.08
0.075 ± 0.005
1.91 0.13
G VD20434-001
±
±
0.040 ± 0.007
1.03 0.18
1.0
0.5
±
0.3 0.5
1
2
4
5
20 30
3
6
10
50
0.016 ± 0.002
0.41 0.04
TYP
0.0047 ± 0.0013
±
0.007 ± 0.003
0.18 0.08
0.12
±
0.033
REVERSE VOLTAGE
(VOLTS)
TYP
±
SO T-23 PAC KAG E - C o nsult fa c to ry fo r a d d itio na l p a c ka g e c o nfig ura tio ns.
All d im e nsio ns a re in / m m .
Unle ss o the rwise sp e c ifie d , the to le ra nc e o n d im e nsio ns is ± 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: in fo@sp ra g u e g o o d m a n .c o m
3
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARAC TOR DIODES
FEATURES
• Me sa e p ita xia l silic o n c o nstruc tio n
• Lo w vo lta g e wire le ss p ha se lo c ke d lo o p VC O s
• Silic o n d io xid e p a ssiva te d
• Pha se shifte rs
• Sup e rio r m id ra ng e line a r c ha ra c te ristic s
• Hig h tuning ra tio s
SPEC IFICATIO NS
Re ve rse b re a kd o wn vo lta g e a t 10 µA DC
(a t 25°C ): 12 V m in
• Hig h Q
Ma xim um re ve rse le a ka g e c urre nt a t –10 V
(a t 25°C ): 0.05 µA DC
• Ava ila b le in c o m m o n c a tho d e style
• Ava ila b le in c hip fo rm (a d d suffix -000)
De vic e d issip a tio n a t 25°C : 250 m W (d e ra te d
line a rly to ze ro a t +125°C )
APPLICATIO NS
• TC XO s, VC XO s
O p e ra ting junc tio n te m p e ra ture : –55°C to +125°C
Sto ra g e te m p e ra ture : –55°C to +125°C
• Lo w vo lta g e wire le ss o p e n lo o p VC O s
To ta l
C a p a c ita nc e
T (p F) a t –1 V
m in
To ta l
C a p a c ita nc e
C T (p F) a t –2.5 V
To ta l
C a p a c ita nc e
C T (p F) a t –8 V
m a x
Mo d e l Num b e r
Q m in
C
a t –4 V
C o m m o n
C a tho d e
m in
m a x
(50 MHz)
Sing le
13.0
13.0
17.0
17.0
6.5
6.5
8.5
8.5
10.0
10.0
13.0
13.0
2.7
2.7
3.2
3.2
750
350
600
300
G VD20442-001
G VD20443-001
G VD20444-001
G VD20445-001
G VD20442-004
G VD20443-004
G VD20444-004
G VD20445-004
26.0
26.0
36.0
36.0
13.0
13.0
18.0
18.0
20.0
20.0
27.0
27.0
4.7
4.7
6.2
6.2
500
225
400
150
G VD20446-001
G VD20447-001
G VD20448-001
G VD20449-001
---
---
---
---
To ta l
C a p a c ita nc e
C T (p F) a t –1 V
m in
To ta l
C a p a c ita nc e
C T (p F) a t –2.5 V
To ta l
C a p a c ita nc e
C T (p F) a t –4 V
m a x
Mo d e l Num b e r
Q m in
a t –4 V
(50 MHz)
C o m m o n
C a tho d e
m in
m a x
Sing le
9.0
4.5
6.5
3.0
400
G VD20450-001
G VD20450-004
TOP VIEW
3
3
50.0
0.031
0.80
TYP
0.035
0.90
TYP
1
2
1
2
(SINGLE)
(COMMON CATHODE)
0.079
2.0
10.0
0.115 ± 0.005
2.93 0.13
±
0.038 ± 0.003
0.96 0.065
C
(p F)
T
±
0.037
0.95
5.0
G VD20448-001
G VD20446-001
0.037
0.95
0.051 ± 0.004
1.3 0.1
0.091 ± 0.008
3.0
2.0
±
2.3
± 0.2
G VD20444-001
PAD LAYO UT
0.021 ± 0.003
0.53 0.08
0.075 ± 0.005
1.91 0.13
±
±
1.0
0.5
G VD20450-001
0.040 ± 0.007
1.03 0.18
±
0.3 0.5
1
2
4
5
20 30
50
3
6
10
0.016 ± 0.002
0.41 0.04
TYP
0.0047 ± 0.0013
±
0.007 ± 0.003
0.18 0.08
0.12
±
0.033
REVERSE VOLTAGE
(VOLTS)
TYP
±
SO T-23 PAC KAG E - C o nsult fa c to ry fo r a d d itio na l p a c ka g e c o nfig ura tio ns.
All d im e nsio ns a re in / m m .
Unle ss o the rwise sp e c ifie d , the to le ra nc e o n d im e nsio ns is ± 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: in fo@sp ra g u e g o o d m a n .c o m
4
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
APPLICATIONS
• Mesa epitaxial silicon construction
• PCS
• WANS
• TAGS
• DECT
• AMPS
• Silicon dioxide passivated
• GSM
• Fits footprint for SOD-323, SOD-123 and smaller
• High frequency (VHF to 8 GHz)
• Cellular
SPECIFICATIONS
• Available on carrier and reel
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
• Available in chip form (add suffix -000)
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
• Two package styles including lower cost, flat
top version
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• Alternate notched termination version available,
contact factory for outline drawing
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Total
Capacitance
CT (pF) at –1 V
min
Total
Capacitance
CT (pF) at –2.5 V
Total
Capacitance
CT (pF) at –4 V
max
Total
Capacitance
CT (pF) at –8 V
max
Q min
at –4 V
(50 MHz)
Model
Number*
min
max
36.0
26.0
17.0
13.0
9.0
18.0
13.0
8.5
6.5
4.5
27.0
20.0
13.0
10.0
6.5
12.0
9.0
6.0
4.5
3.0
6.2
4.7
3.2
2.7
1.7
400
500
600
750
900
GVD90001 – _ _ _
GVD90002 – _ _ _
GVD90003 – _ _ _
GVD90004 – _ _ _
GVD90005 – _ _ _
4.0
1.8
1.2
0.6
2.0
1.1
0.8
0.5
3.0
1.5
1.1
0.8
1.5
0.8
0.6
0.4
1.0
1200
1400
1600
1800
GVD90006 – _ _ _
GVD90007 – _ _ _
GVD90008 – _ _ _
GVD90009 – _ _ _
0.55
0.45
0.35
* For complete model number, select “Dash No.” from chart below.
Dash
No.
A
B
C1
C2
D
K
L
M
TERMINATIONS (GOLD PLATED)
DOT INDICATES
CATHODE END
B
- 011
- 111
- 012
- 112
- 013
- 113
- 014
0.10 0.050 0.035 0.050
2.5 1.3 0.89 1.3
0.015 0.004
0.38 0.1
0.030 0.070 0.112
0.76 1.8 2.84
D TYP
A
BOTTOM VIEW
TOP VIEW
0.12 0.060 0.035 0.050
3.0 1.5 0.89 1.3
0.020 0.005
0.51 0.1
0.030 0.080 0.132
0.76 2.0 3.35
EPOXY
ENCAPSULANT
C1
K TYP
0.200 0.100 0.035 0.050
5.08 2.54 0.89 1.3
0.020 0.005
0.51 0.1
0.030 0.120 0.212
0.76 3.05 5.38
L
SIDE VIEW FOR - 01__
0.075 0.050 0.035 0.050
1.9 1.3 0.89 1.3
0.015 0.004
0.38 0.1
0.030 0.070 0.087
M
EPOXY
0.76
1.8
2.2
- 114
- 015
- 115
ENCAPSULANT
C2
MOUNTING PAD LAYOUT
0.062 0.042 0.030 0.050
1.6 1.1 0.76 1.3
0.011 0.003
0.28 0.08
0.020 0.060 0.072
0.51 1.5 1.8
SIDE VIEW FOR - 11__
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is 0.003/ 0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
5
VARACTOR DIODES
SG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
Microwave Hyperabrupt Series
FEATURES
• Mesa epitaxial silicon construction
• High linearity VCOs
• Phase shifters
• Silicon dioxide passivated
• Superior wide range linear characteristics
• High tuning ratios
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 20 V min
• High Q
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
APPLICATIONS
• Low phase noise VCOs
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
• Phase locked loop VCOs
Total
Capacitance
CT (pF) at –0 V
min
Total
Capacitance
CT (pF) at –4 V
Total
Capacitance
CT (pF) at –20 V
Model Number
Q min
at –4 V
Common
Cathode
min
max
min
max
(50 MHz)
Single
2.7
4.2
6.3
11.9
26.0
1.25
1.70
2.20
3.70
9.00
1.75
2.50
3.80
5.50
11.00
0.43
0.52
0.68
0.94
1.90
0.57
0.72
0.96
1.30
2.50
1000
850
700
600
400
GVD30422-001
GVD30432-001
GVD30442-001
GVD30452-001
GVD30462-001
GVD30422-004
GVD30432-004
GVD30442-004
GVD30452-004
GVD30462-004
TOP VIEW
3
3
0.031
0.80
50.0
TYP
0.035
0.90
TYP
1
2
1
2
(SINGLE)
(COMMON CATHODE)
0.079
2.0
0.115 0.005
2.93 0.13
10.0
0.038 0.003
0.96 0.065
C (pF)
T
0.037
0.95
GVD30432-001
GVD30452-001
5.0
0.037
0.95
0.051 0.004
1.3 0.1
0.091 0.008
3.0
2.0
2.3
0.2
PAD LAYOUT
0.021 0.003
0.53 0.08
0.075 0.005
1.91 0.13
GVD30422-001
1.0
0.5
0.040 0.007
1.03 0.18
0.3 0.5
1
2
4
5
20 30
50
3
6
10
0.016 0.002
0.41 0.04
TYP
0.0047 0.0013
0.007 0.003
0.18 0.08
0.12
0.033
TYP
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
6
VARACTOR DIODES
SG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
VHF/UHF Hyperabrupt Series
FEATURES
• Mesa epitaxial silicon construction
• High linearity VCOs
• Phase shifters
• Silicon dioxide passivated
• Superior wide range linear characteristics
• High tuning ratios
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 25 V min
• High Q
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
APPLICATIONS
• Low phase noise VCOs
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
• Phase locked loop VCOs
Total
Capacitance
CT (pF) at –3 V
Total
Capacitance
CT (pF) at –25 V
Model Number
Q min
at –4 V
Common
Cathode
min
max
min
max
(50 MHz)
Single
9.5
9.5
26.0
26.0
14.5
14.5
32.0
32.0
1.8
1.8
4.3
4.3
2.8
2.8
6.0
6.0
200
750
200
500
GVD30501-001
GVD30502-001
GVD30503-001
GVD30504-001
—
—
—
—
TOP VIEW
3
50.0
3
0.031
0.80
TYP
0.035
0.90
TYP
1
2
1
2
(SINGLE)
(COMMON CATHODE)
0.079
2.0
GVD30503-001
10.0
5.0
0.115 0.005
2.93 0.13
C (pF)
T
0.038 0.003
0.96 0.065
0.037
0.95
0.037
0.95
3.0
2.0
0.051 0.004
1.3 0.1
0.091 0.008
2.3 0.2
GVD30502-001
PAD LAYOUT
0.021 0.003
0.53 0.08
0.075 0.005
1.91 0.13
1.0
0.5
0.040 0.007
1.03 0.18
0.3 0.5
1
2
4
5
20 30
3
6
10
50
0.016 0.002
0.41 0.04
TYP
0.0047 0.0013
0.12 0.033
TYP
0.007 0.003
0.18 0.08
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
7
VARACTOR DIODES
SG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
VHF/UHF Hyperabrupt Series
FEATURES
• High linearity VCOs
• Phase shifters
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior wide range linear characteristics
• High tuning ratios
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 22 V min
• High Q
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
APPLICATIONS
• Low phase noise VCOs
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
• Phase locked loop VCOs
Total
Capacitance
CT (pF) at –4 V
Total
Capacitance
CT (pF) at –8 V
Total
Capacitance
CT (pF) at –20 V
Model Number
Q min
at –4 V
(50 MHz)
Common
Cathode
min
max
min
max
min
max
Single
18.0
45.0
100.0
22.0
55.0
120.0
7.5
18.0
39.0
10.5
25.0
55.0
2.7
6.6
14.0
3.5
9.0
19.0
160
125
80
GVD30601-001
GVD30602-001
GVD30603-001
—
—
—
TOP VIEW
500
3
3
0.031
0.80
TYP
0.035
0.90
TYP
1
2
1
2
100
50
(SINGLE)
(COMMON CATHODE)
0.079
2.0
0.115 0.005
2.93 0.13
GVD30602-001
0.038 0.003
0.96 0.065
0.037
0.95
GVD30603-001
C (pF)
T
0.037
0.95
0.051 0.004
1.3 0.1
0.091 0.008
2.3
0.2
GVD30601-001
PAD LAYOUT
10
0.021 0.003
0.53 0.08
0.075 0.005
1.91 0.13
0.040 0.007
1.03 0.18
5
3
0.016 0.002
0.41 0.04
TYP
0.0047 0.0013
0.12 0.033
TYP
0.5
1
2
3
4
5
6
10
20 30
50
0.007 0.003
0.18 0.08
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
8
VARACTOR DIODES
SG-950
MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
APPLICATIONS
• Mesa epitaxial silicon construction
• PCS
• WANS
• TAGS
• AMPS
• DECT
• Silicon dioxide passivated
• GSM
• Fits Footprint for SOD-323, SOD-123 and smaller
• High frequency (VHF to 8 GHz)
• Cellular
SPECIFICATIONS
• Available on carrier and reel
Reverse breakdown voltage at 10 µA DC
(at 25°C): 22 V min
• Available in chip form (add suffix -000)
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
• Two package styles including lower cost, flat
top version
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• Alternate notched termination version available,
contact factory for outline drawing
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Total
Total
Capacitance
CT (pF) at –4 V
Total
Capacitance
CT (pF) at –20 V
Capacitance
CT (pF) at 0 V
typical
Q min
at –4 V
(50 MHz)
Model
Number*
min
max
min
max
–
GVD92101 _ _ _
26.0
14.0
7.0
8.75
4.45
2.65
10.80
5.50
3.30
1.85
0.85
0.65
2.50
1.30
0.90
400
600
700
–
GVD92102 _ _ _
–
GVD92103 _ _ _
–
GVD92104 _ _ _
5.0
3.0
2.0
1.75
1.30
0.85
2.20
1.65
1.10
0.50
0.40
0.30
0.70
0.55
0.45
850
1000
1200
–
GVD92105 _ _ _
–
GVD92106 _ _ _
*For complete model number, select “Dash No.” from chart below.
Dash
No.
A
B
C1
C2
D
K
L
M
TERMINATIONS (GOLD PLATED)
DOT INDICATES
CATHODE END
B
- 011
- 111
- 012
- 112
- 013
- 113
- 014
0.10 0.050 0.035 0.050
2.5 1.3 0.89 1.3
0.015 0.004
0.38 0.1
0.030 0.070 0.112
0.76 1.8 2.84
D TYP
A
BOTTOM VIEW
TOP VIEW
0.12 0.060 0.035 0.050
3.0 1.5 0.89 1.3
0.020 0.005
0.51 0.1
0.030 0.080 0.132
0.76 2.0 3.35
EPOXY
ENCAPSULANT
C1
K TYP
0.200 0.100 0.035 0.050
5.08 2.54 0.89 1.3
0.020 0.005
0.51 0.1
0.030 0.120 0.212
0.76 3.05 5.38
L
SIDE VIEW FOR - 01__
0.075 0.050 0.035 0.050
1.9 1.3 0.89 1.3
0.015 0.004
0.38 0.1
0.030 0.070 0.087
M
EPOXY
0.76
1.8
2.2
- 114
- 015
- 115
ENCAPSULANT
C2
MOUNTING PAD LAYOUT
0.062 0.042 0.030 0.050
1.6 1.1 0.76 1.3
0.011 0.003
0.28 0.08
0.020 0.060 0.072
0.51 1.5 1.8
SIDE VIEW FOR - 11__
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is 0.003/ 0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
9
VARACTOR DIODES
SG-950
HIGH Q ABRUPT TUNING VARACTOR DIODES
FEATURES
• Phase locked loop VCOs
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Economy price
• Moderate bandwidth VCOs
SPECIFICATIONS
• Mil grade performance
• High Q
Reverse breakdown voltage at 10 µA DC
(at 25°C): 30 V min
Maximum reverse leakage current at –25 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
APPLICATIONS
• Low phase noise VCOs
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
Capacitance
Ratio
Total
Model Number
Capacitance
CT (pF) at –4 V
( 10%)
CT at 0 V
CT at –30 V
Q min
at –4 V
(50 MHz)
Common
Cathode
Single
min
1.2
1.5
1.8
2.2
2.7
3.4
3.5
3.5
3.7
3.7
3200
3000
3000
3000
2500
GVD1202-001
GVD1203-001
GVD1204-001
GVD1205-001
GVD1206-001
GVD1202-004
GVD1203-004
GVD1204-004
GVD1205-004
GVD1206-004
3.3
3.9
4.7
5.6
6.8
3.8
3.9
3.9
4.0
4.0
2500
2500
2000
2000
2000
GVD1207-001
GVD1208-001
GVD1209-001
GVD1210-001
GVD1211-001
GVD1207-004
GVD1208-004
GVD1209-004
GVD1210-004
—
8.2
10.0
12.0
15.0
18.0
22.0
4.0
4.1
4.1
4.2
4.2
4.2
2000
1800
1600
1250
1000
850
GVD1212-001
GVD1213-001
GVD1214-001
GVD1215-001
GVD1216-001
GVD1217-001
—
—
—
—
—
—
TOP VIEW
3
3
20
10
0.031
0.80
TYP
0.035
0.90
TYP
1
2
1
2
(SINGLE)
(COMMON CATHODE)
0.079
2.0
GVD1213-001
GVD1211-001
GVD1209-001
0.115 0.005
2.93 0.13
5
3
0.038 0.003
0.96 0.065
0.037
0.95
JUNCTION
GVD1207-001
GVD1203-001
CAPACITANCE
(pF)
0.037
0.95
0.051 0.004
1.3 0.1
0.091 0.008
2
2.3
0.2
PAD LAYOUT
0.021 0.003
0.53 0.08
0.075 0.005
1.91 0.13
1
0.040 0.007
1.03 0.18
0.5
0.016 0.002
0.41 0.04
TYP
3
6
1
2
4
5
10
20
30
0.0047 0.0013
0.12 0.033
TYP
0.007 0.003
0.18 0.08
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
10
VARACTOR DIODES
SG-950
MICROWAVE ABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
APPLICATIONS
• Mesa epitaxial silicon construction
• PCS
• WANS
• TAGS
• AMPS
• DECT
• Silicon dioxide passivated
• GSM
• Fits Footprint for SOD-323, SOD-123 and smaller
• High Frequency (VHF to 8 GHz)
• Available on carrier and reel
• Cellular
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 30 V min
• Available in chip form (add suffix -000)
Maximum reverse leakage current at –25 V
(at 25°C): 0.05 µA DC
• Two package styles including lower cost, flat
top version
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• Alternate notched termination version available,
contact factory for outline drawing
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Capacitance
Ratio
Capacitance
Ratio
Total
Capacitance
CT (pF) at –4 V
( 10%)
CT at 0 V
CT at –4 V
CT at –4 V
CT at –30 V
Q min
at –4 V
(50 MHz)
Model
Number*
min
min
0.8
1.0
1.2
1.5
1.8
2.2
1.5
1.6
1.7
1.8
1.9
2.0
1.45
1.55
1.60
1.65
1.70
1.75
3900
3800
3700
3600
3500
3400
GVD91300 –
_ _ _
_ _ _
_ _ _
_ _ _
_ _ _
_ _ _
GVD91301 –
GVD91302 –
GVD91303 –
GVD91304 –
GVD91305 –
2.7
3.3
3.9
4.7
5.6
2.0
2.1
2.1
2.2
2.2
1.80
1.85
1.90
1.95
2.00
3300
3100
2700
2600
2500
GVD91306 –
GVD91307 –
GVD91308 –
GVD91309 –
GVD91310 –
_ _ _
_ _ _
_ _ _
_ _ _
_ _ _
*For complete model number, select “Dash No.” from chart below.
Dash
No.
A
B
C1
C2
D
K
L
M
TERMINATIONS (GOLD PLATED)
DOT INDICATES
CATHODE END
B
- 011
- 111
- 012
- 112
- 013
- 113
- 014
0.10 0.050 0.035 0.050
2.5 1.3 0.89 1.3
0.015 0.004
0.38 0.1
0.030 0.070 0.112
0.76 1.8 2.84
D TYP
A
BOTTOM VIEW
TOP VIEW
0.12 0.060 0.035 0.050
3.0 1.5 0.89 1.3
0.020 0.005
0.51 0.1
0.030 0.080 0.132
0.76 2.0 3.35
EPOXY
ENCAPSULANT
C1
K TYP
0.200 0.100 0.035 0.050
5.08 2.54 0.89 1.3
0.020 0.005
0.51 0.1
0.030 0.120 0.212
0.76 3.05 5.38
L
SIDE VIEW FOR - 01__
0.075 0.050 0.035 0.050
1.9 1.3 0.89 1.3
0.015 0.004
0.38 0.1
0.030 0.070 0.087
M
EPOXY
0.76
1.8
2.2
- 114
- 015
- 115
ENCAPSULANT
C2
MOUNTING PAD LAYOUT
0.062 0.042 0.030 0.050
1.6 1.1 0.76 1.3
0.011 0.003
0.28 0.08
0.020 0.060 0.072
0.51 1.5 1.8
SIDE VIEW FOR - 11__
All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is 0.003/ 0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
11
VARACTOR DIODES
SG-950
MINIATURE MICROWAVE SILICON VARACTOR DIODES
Surface Mount Monolithic Package (SMMP)
APPLICATIONS
Microwave Voltage Controlled Oscillators (VCOs)
FEATURES
• Multilayer construction
Ideal for Wide Bandwidth Applications (VHF-10 GHz)
• Low SMT profile
• Low series inductance
• Low parasitic capacitance (0.06 pF)
• High Q
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): See below
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
• Available on carrier and reel
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Capacitance
Capacitance
Ratio
Ratio
Total
Capacitance
CT (pF) at –1 V
CT at –1 V
CT at –3 V
CT at –1 V
CT at –6 V
Q min
at –4 V
(50 MHz)
Model
Number
min
max
min
1.4
max
2.2
min
2.6
max
3.6
2.6
3.8
1500
GVD60100
Reverse breakdown voltage at 10 µA DC: 15 V min
Total
Total
Capacitance
CT (pF) at –4 V
Total
Capacitance
CT (pF) at –20 V
Capacitance
CT (pF) at –0 V
typical
Q min
at –4 V
(50 MHz)
Model
Number
min
max
max
max
3.25
0.9
1.5
0.2
0.45
1000
GVD60200
Reverse breakdown voltage at 10 µA DC: 22 V min
Models shown above supplied bulk in vials.
For 300 pc gel pack, add “-03" to the model number.
For 5000 pc carrier and reel, add “-50" to the model number.
MARKING FOR
CATHODE END
0.019
0.48
TOP VIEW
0.040
1.02
0.015
0.38
SIDE VIEW
0.020
0.51
GOLD METALIZED
PADS (2 PLACES)
BOTTOM VIEW
0.011
0.28
0.016
0.41
0.012
0.30
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
© 2000 SPRAGUE-GOODMAN ELECTRONICS, INC., ALL RIGHTS RESERVED. PRINTED IN THE U.S.A. 50104
12
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