HGT1S3N60B3DS9A [ETC]
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB ; 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 3.5AI （ C） | TO- 263AB\n
| 型号： | HGT1S3N60B3DS9A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB
|
| 文件： | 总8页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTP3N60B3D, HGT1S3N60B3DS
Data Sheet
December 2001
7A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
Features
o
• 7A, 600V T = 25 C
C
The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T = 125 C
J
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
o
state voltage drop varies only moderately between 25 C and
o
150 C. The diode used in anti-parallel with the IGBT is the
RHRD460. The IGBT used is TA49192.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• TB334 “Guidelines for Soldering Surface Mount
- Components to PC Boards
Packaging
JEDEC TO-220AB
Formerly Developmental Type TA49193.
E
C
G
Ordering Information
COLLECTOR
(FLANGE)
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
G3N60B3D
G3N60B3D
HGTP3N60B3D
HGT1S3N60B3DS
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60B3DS9A.
Symbol
TO-263, TO-263AB
C
COLLECTOR
G
G
(FLANGE)
E
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTP3N60B3D, HGT1S3N60B3DS Rev. B
HGTP3N60B3D, HGT1S3N60B3DS
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
HGTP3N60B3D,
HGT1S3N60B3DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
7.0
3.5
A
A
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
4.0
EC(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
20
A
V
V
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
18A at 600V
33.3
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
PKG
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
5
µs
µs
GE
GE
SC
SC
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
10
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 82Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
600
-
-
CES
C
GE
o
I
V
= BV
CES
T
= 25 C
-
-
250
2.0
2.1
2.5
6.0
±250
-
µA
mA
V
CES
CE
C
C
C
C
o
T
T
T
= 150 C
-
o
Collector to Emitter Saturation Voltage
V
I
= I
,
= 25 C
-
1.8
2.1
5.4
-
CE(SAT)
C
C110
= 15V
V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= V
GE
4.5
-
V
GE(TH)
C CE
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C, R = 82Ω, V
= 15V
18
-
J
G
GE
L = 500µH, V = 600V
CE
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
7.9
18
21
18
16
105
70
66
88
-
22
25
-
V
GEP
C
Q
= I
,
V
= 15V
nC
nC
ns
ns
ns
ns
µJ
µJ
g(ON)
C
C110
= 0.5 BV
GE
GE
V
CE
CES
V
= 20V
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
J
d(ON)I
I
= I
CE
C110
t
-
rI
d(OFF)I
V
V
R
= 0.8 BV
= 15V
CE
CES
GE
Current Turn-Off Delay Time
Current Fall Time
t
-
= 82Ω
G
L = 1mH
Test Circuit (Figure 19)
t
-
fI
Turn-On Energy
E
75
160
ON
Turn-Off Energy (Note 1)
E
OFF
©2001 Fairchild Semiconductor Corporation
HGTP3N60B3D, HGT1S3N60B3DS Rev. B
HGTP3N60B3D, HGT1S3N60B3DS
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
16
18
220
115
130
210
2.0
-
MAX
-
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 150 C
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= I
CE
C110
t
-
ns
rI
d(OFF)I
V
= 0.8 BV
= 15V
CE
CES
V
GE
Current Turn-Off Delay Time
Current Fall Time
t
295
175
140
325
2.5
22
ns
R
= 82Ω
G
L = 1mH
t
ns
fI
Test Circuit (Figure 19)
Turn-On Energy
E
µJ
ON
Turn-Off Energy (Note 1)
Diode Forward Voltage
Diode Reverse Recovery Time
E
µJ
OFF
V
I
I
I
= 3A
V
EC
EC
EC
EC
t
= 1A, dI /dt = 200A/µs
EC
ns
rr
= 3A, dI /dt = 200A/µs
EC
-
28
ns
o
Thermal Resistance Junction To Case
R
IGBT
-
3.75
3.0
C/W
θJC
o
Diode
C/W
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves Unless Otherwise Specified
20
o
= 150 C, R = 82Ω, V
T
= 15V L = 500µH
7
6
5
4
3
2
1
0
J
G
GE
18
16
14
12
10
8
V
= 15V
GE
6
4
2
0
0
100
200
300
400
500
600
700
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
C
CE
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTP3N60B3D, HGT1S3N60B3DS Rev. B
HGTP3N60B3D, HGT1S3N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
200
16
45
40
35
30
25
20
15
o
T
= 150 C, R = 82Ω, L = 1mH, V
= 480V
o
J
G
CE
V
= 360V, R = 82Ω, T = 125 C
G J
CE
100
10
1
T
V
C
o
o
o
GE
14
12
10
8
15V
10V
I
75 C
75 C
110 C 15V
110 C 10V
SC
o
f
f
= 0.05 / (t
+ t
)
MAX1
d(OFF)I
= (P - P ) / (E
d(ON)I
+ E )
OFF
t
SC
MAX2
D
C
ON
P
= CONDUCTION DISSIPATION
C
6
(DUTY FACTOR = 50%)
o
R
= 3.75 C/W, SEE NOTES
ØJC
4
10
11
12
13
14
15
1
2
3
4
5
6
7
8
V
, GATE TO EMITTER VOLTAGE (V)
I
, COLLECTOR TO EMITTER CURRENT (A)
GE
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
30
25
20
15
10
5
14
DUTY CYCLE <0.5%, V
= 10V
PULSE DURATION = 250µs
o
DUTY CYCLE <0.5%, V
= 15V
PULSE DURATION = 250µs
GE
GE
T
= -55 C
C
C
o
12
10
8
T
= -55 C
C
o
T
= 150 C
o
T
= 150 C
C
6
o
T
= 25 C
C
4
o
T
= 25 C
C
2
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0.7
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0.6
R
= 82Ω, L = 1mH, V
= 480V
R
= 82Ω, L = 1mH, V
= 480V
G
CE
G
CE
0.6
0.5
0.4
0.3
0.2
0.1
0
o
o
0.5
0.4
0.3
0.2
0.1
0
T
= 25 C, T = 150 C, V
= 10V
J
J
GE
o
T
= 150 C; V
= 10V OR 15V
J
GE
o
T
= 25 C; V
= 10V OR 15V
7 8
J
GE
o
o
V
= 15V, T = 150 C, T = 25 C
GE
J
J
1
2
3
4
5
6
7
8
1
2
3
4
5
6
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP3N60B3D, HGT1S3N60B3DS Rev. B
HGTP3N60B3D, HGT1S3N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
80
70
60
50
40
30
20
10
45
40
35
30
25
20
15
10
R
= 82Ω, L = 1mH, V
= 480V
CE
R
= 82Ω, L = 1mH, V
= 480V
CE
G
G
o
o
T
= 25 C, T = 150 C, V = 10V
GE
J
J
o
o
T
= 25 C AND T = 150 C, V = 10V
J
J
GE
o
o
T
= 25 C, T = 150 C, V
GE
= 15V
J
J
o
o
T
= 25 C, T = 150 C, V
= 15V
J
J
GE
7
1
2
3
4
5
6
8
1
2
3
4
5
6
7
8
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
140
R
= 82Ω, L = 1mH, V
= 480V
CE
G
R
= 82Ω, L = 1mH, V
= 480V
G
CE
225
200
175
150
125
100
75
o
T
= 150 C, V
= 15V
= 10V
J
GE
120
100
80
o
T
= 150 C, V
GE
= 10V OR 15V
J
o
T
= 150 C, V
GE
J
o
T
= 25 C, V
= 15V
J
GE
o
= 25 C, V
T
= 10V OR 15V
J
GE
o
T
= 25 C, V
= 10V
3
J
GE
60
1
2
4
5
6
7
8
1
2
3
4
5
6
7
8
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
15
30
o
= 25 C
C
I
= 1mA,
G(REF)
= 171Ω, T = 25 C
T
PULSE DURATION = 250µs
o
R
L
C
25
20
15
10
5
12
9
o
T
= -55 C
C
o
T
= 150 C
C
6
V
= 200V
V
= 400V
V
= 600V
CE
CE
CE
3
0
0
0
5
10
15
20
25
5
6
7
8
9
10
11
12
13
14
15
Q , GATE CHARGE (nC)
g
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP3N60B3D, HGT1S3N60B3DS Rev. B
HGTP3N60B3D, HGT1S3N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
500
FREQUENCY = 1MHz
400
C
IES
300
200
100
0
C
OES
C
RES
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
0
10
0.5
0.2
t
1
0.1
-1
10
10
P
D
0.05
t
2
0.02
0.01
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R
) + T
SINGLE PULSE
J
D
θJC
θJC
C
-2
-5
10
-4
-3
-2
10
-1
10
0
1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
15
12
9
30
o
T
= 25 C, dI /dt = 200A/µs
C
EC
25
20
15
10
5
t
rr
o
150 C
t
a
b
6
o
25 C
o
-55 C
t
3
0
0.5
0
1
2
3
4
0
0.5
1.0
1.5
2.0
2.5
3.0
I
, FORWARD CURRENT (A)
EC
V
, FORWARD VOLTAGE (V)
EC
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP3N60B3D, HGT1S3N60B3DS Rev. B
HGTP3N60B3D, HGT1S3N60B3DS
Test Circuit and Waveforms
HGTP3N60B3D
90%
OFF
10%
ON
V
GE
E
E
V
CE
L = 1mH
90%
R
= 82Ω
G
10%
d(OFF)I
+
I
DUT
CE
t
t
V
= 480V
rI
DD
t
fI
-
t
d(ON)I
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t
MAX1
+ t ).
d(OFF)I d(ON)I
MAX1
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26™” or equivalent.
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
and t are defined in Figure 20.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
limiting condition for an application other than T . t
is important when controlling output ripple under a lightly
loaded condition.
JM d(OFF)I
3. Tips of soldering irons should be grounded.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
4. Devices should never be inserted into or removed from
circuits with power on.
allowable dissipation (P ) is defined by P = (T - T )/R
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
the conduction losses (P ) are approximated by
P
.
D
D
JM θJC
C
5. Gate Voltage Rating - Never exceed the gate-voltage
D
rating of V
. Exceeding the rated V can result in
GEM
GE
C
permanent damage to the oxide layer in the gate region.
= V
CE
x I )/2.
CE
C
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
E
and E
are defined in the switching waveforms
OFF
ON
shown in Figure 20. E
is the integral of the instantaneous
ON
power loss (I
CE
x V ) during turn-on and E
is the
CE
integral of the instantaneous power loss (I
OFF
x V ) during
CE
CE
turn-off. All tail losses are included in the calculation for
; i.e., the collector current equals zero (I = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
E
OFF
CE
©2001 Fairchild Semiconductor Corporation
HGTP3N60B3D, HGT1S3N60B3DS Rev. B
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