HGT1S7N60B3S9A [ETC]
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB ; 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 7A I（C ） | TO- 263AB\n
| 型号： | HGT1S7N60B3S9A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB
|
| 文件： | 总7页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Data Sheet
January 2002
14A, 600V, UFS Series N-Channel IGBTs
Features
o
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
• 14A, 600V, T = 25 C
C
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
o
o
25 C and 150 C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
Formerly Developmental Type TA49190.
Ordering Information
PART NUMBER
HGTD7N60B3S
HGT1S7N60B3S
HGTP7N60B3
PACKAGE
BRAND
G7N60B
TO-252AA
JEDEC TO-263AB
COLLECTOR
TO-263AB
TO-220AB
G7N60B3
G7N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.,
HGTD7N60B3S9A.
G
(FLANGE)
E
Symbol
JEDEC TO-252AA
C
COLLECTOR
(FLANGE)
G
G
E
E
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
14
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
7
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
56
±20
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
35A at 600V
60
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.476
100
W/ C
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
ARV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
2
µs
µs
GE
GE
12
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than I
o
.
CM
2. V
CE
= 360V, T = 125 C, R = 50Ω.
J G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V
MIN
600
15
-
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
-
28
-
CES
ECS
C
C
GE
= 0V
= 3mA, V
GE
-
V
o
I
V
= BV
T
T
T
T
= 25 C
100
2.0
2.1
2.4
6.0
±100
-
µA
mA
V
CES
CE
CES
C
C
C
C
o
= 150 C
-
-
o
Collector to Emitter Saturation Voltage
V
I
V
= I
,
= 25 C
-
1.8
2.1
5.1
-
CE(SAT)
C
C110
= 15V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= V
3.0
-
V
GE(TH)
C
CE
GE
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C
V
V
= 480V
= 600V
42
35
-
J
CE
R
V
= 50Ω
= 15V
G
-
-
A
CE
GE
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
-
7.7
23
-
28
37
-
V
GEP
C
C
Q
,
V
= 15V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
G(ON)
C110
= 0. 5BV
GE
GE
V
CE
CES
V
= 20V
o
30
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode Both at T = 25 C
I
26
d(ON)I
J
= I
, V
= 0.8 BV ,
CE
C110 CE
CES
t
21
-
rI
V
= 15V, R = 50Ω, L = 2mH
G
GE
Test Circuit (Figure 17)
Current Turn-Off Delay Time
Current Fall Time
t
130
60
160
80
-
d(OFF)I
t
fI
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
E
E
E
72
ON1
ON2
OFF
160
120
200
200
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
24
MAX
-
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode Both at T = 150 C
-
-
-
-
-
-
-
-
d(ON)I
J
I
= I
, V
C110 CE
= 0.8 BV ,
CE
CES
t
22
-
ns
rI
V
= 15V, R =50Ω, L = 2mH
GE
Test Circuit (Figure 17)
G
Current Turn-Off Delay Time
Current Fall Time
t
230
120
80
295
175
-
ns
d(OFF)I
t
ns
fI
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
E
E
E
µJ
ON1
ON2
OFF
310
350
-
350
500
2.1
µJ
µJ
o
Thermal Resistance Junction To Case
NOTE:
R
C/W
θJC
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the Turn-On loss of the IGBT only. E
ON2
is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 17.
Typical Performance Curves Unless Otherwise Specified
16
14
12
10
8
50
40
30
20
10
0
o
V
= 15V
GE
T
= 150 C, R = 50Ω, V = 15V
GE
J
G
6
4
2
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
18
14
10
100
80
400
o
o
V
= 360V, R = 50Ω, T = 125 C
G J
T
= 150 C, R = 50Ω, L = 2mH, V
CE
= 480V
CE
J
G
T
V
C
GE
o
o
o
o
75 C 15V
75 C 10V
110 C 15V
110 C 10V
100
I
SC
60
10
f
f
= 0.05 / (t
+ t
d(ON)I
)
MAX1
d(OFF)I
= (P - P ) / (E
+ E
)
MAX2
D
C
ON2
OFF
6
2
40
20
P
= CONDUCTION DISSIPATION
t
C
SC
(DUTY FACTOR = 50%)
o
R
= 2.1 C/W, SEE NOTES
ØJC
1
10
11
12
13
14
15
1
2
3
4
5
6
8
10
15
I
, COLLECTOR TO EMITTER CURRENT (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
30
40
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 10V
25
20
15
10
5
30
20
10
0
o
T
= 150 C
C
o
o
= -55 C
T
= 150 C
T
C
C
o
T
= -55 C
C
o
= 25 C
T
o
C
T
= 25 C
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V = 15V
GE
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
1000
1600
R
= 50Ω, L = 2mH, V
= 480V
CE
G
R
T
= 50Ω, L = 2mH, V
= 480V
G
CE
800
600
400
200
0
o
= 150 C, V
= 10V
1200
800
400
0
J
J
J
J
GE
o
T
= 150 C, V
= 10V AND 15V
J
GE
o
T
T
T
= 150 C, V
= 15V
GE
o
= 25 C, V
= 10V
= 15V
GE
o
= 25 C, V
GE
o
= 25 C, V
T
= 10V AND 15V
GE
J
1
3
5
7
9
11
13
15
1
3
5
7
9
11
13
15
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
60
50
40
30
20
10
140
120
100
80
R
= 50Ω, L = 2mH, V
= 480V
R
= 50Ω, L = 2mH, V = 480V
CE
G
CE
G
o
T
= 150 C, V
= 10V
J
GE
o
= 150 C, V
T
= 10V
GE
J
o
T
= 25 C, V
= 10V
J
GE
o
T
= 25 C, V = 10V
GE
J
o
60
T
= 25 C, V
GE
= 15V
J
40
o
= 150 C, V
T
= 15V
GE
20
J
o
o
T
= 25 C and 150 C, V
= 15V
J
GE
0
1
3
5
7
9
11
13
15
15
14
1
3
5
7
9
11
13
15
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
120
250
R
= 50Ω, L = 2mH, V
= 480V
CE
R
= 50Ω, L = 2mH, V
= 480V
G
G
CE
100
80
200
150
100
50
o
T
= 150 C, V = 15V
GE
o
= 150 C, V
J
T
= 10V and 15V
GE
J
o
T
= 150 C, V
= 10V
J
GE
o
= 25 C, V
T
= 15V
GE
J
60
o
= 25 C, V
T
= 10V
J
GE
o
T
= 25 C, V
= 10V and 15V
J
GE
40
1
3
5
7
9
11
13
15
1
3
5
7
9
11
13
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
15
40
o
I
= 0.758mA, R = 86Ω, T = 25 C
DUTY CYCLE = < 0.5%
g(REF)
L
C
PULSE DURATION = 250µs
V
= 10V
12
9
CE
32
24
16
8
V
= 200V
V
= 600V
CE
CE
o
T
= 25 C
C
V
= 400V
CE
6
o
T
= 150 C
C
3
o
T
= -55 C
C
0
0
6
8
10
12
0
4
8
12
Q , GATE CHARGE (nC)
G
16
20
24
28
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
1200
1000
800
600
400
200
0
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
DUTY CYCLE - DESCENDING ORDER
0
10
0.5
0.2
0.1
t
-1
1
10
10
0.05
P
D
0.02
0.01
SINGLE PULSE
DUTY FACTOR, D = t / t
1
2
t
2
PEAK T = (P X Z
X R
) + T
θJC C
J
D
θJC
-2
-5
10
-4
-3
10
-2
10
-1
0
1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
90%
OFF
L = 2mH
10%
ON2
V
RHRD660
GE
E
E
V
CE
R
= 50Ω
G
90%
+
10%
d(OFF)I
V
= 480V
I
DD
CE
-
t
t
rI
t
fI
t
d(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t
MAX1
+ t ).
d(OFF)I d(ON)I
MAX1
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t are defined in Figure 18.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. Gate Voltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
CE
x I )/2.
CE
C
permanent damage to the oxide layer in the gate region.
E
and E
OFF
are defined in the switching waveforms
is the integral of the instantaneous
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON2
shown in Figure 18. E
power loss (I x V ) during turn-on and E
integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for E
ON2
is the
CE CE OFF
x V ) during
CE
CE
;
OFF
i.e., the collector current equals zero (I = 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
相关型号：
HGT1Y40N60A4D
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
FAIRCHILD
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