HGT1Y40N60C3D [ETC]
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 ; 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 40A I（C ） | TO- 264\n
| 型号： | HGT1Y40N60C3D |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
|
| 文件： | 总9页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGT1Y40N60C3D
Data Sheet
December 2001
75A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
o
• 75A, 600V, T = 25 C
C
The HGT1Y40N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25 C and 150 C. The
IGBT used is the development type TA49273. The diode
used in anti-parallel with the IGBT is the development type
TA49063.
• 600V Switching SOA Capability
o
• Typical Fall Time . . . . . . . . . . . . . . . 100ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
o
o
Packaging
JEDEC STYLE TO-264
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
E
C
G
Formerly developmental type TA49389.
Ordering Information
COLLECTOR
(FLANGE)
PART NUMBER
PACKAGE
PKG. NO.
HGT1Y40N60C3D
TO-264
G40N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGT1Y40N60C3D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
75
40
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
300
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
40A at 600V
291
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.33
W/ C
C
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
100
mJ
ARV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
5
µs
µs
GE
10
GE
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 3Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
600
-
-
CES
C
GE
o
I
V
= BV
T
= 25 C
-
-
250
4.0
1.8
2.0
6.0
±250
-
µA
mA
V
CES
CE
CES
C
C
C
C
o
T
T
T
= 150 C
-
o
Collector to Emitter Saturation Voltage
V
I
= I
C110
= 15V
,
= 25 C
-
1.3
1.4
4.5
-
CE(SAT)
C
V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= V
GE
3.1
-
V
GE(TH)
C CE
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T
= 150 C, R
=
V
V
= 480V
= 600V
200
40
-
J
G
CE
3Ω, V
= 15V,
L = 400µH
GE
-
-
A
CE
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
-
7.2
275
360
47
-
V
GEP
C
Q
= I
,
V
= 15V
302
nC
nC
ns
G(ON)
C
C110
= 0.5 BV
GE
GE
V
CE
CES
V
= 20V
o
395
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
-
d(ON)I
J
I
= I
CE
C110
t
30
-
-
ns
rI
V
V
R
= 0.8 BV
= 15V
CE
CES
Current Turn-Off Delay Time
Current Fall Time
t
GE
185
60
ns
d(OFF)I
= 3Ω
G
t
-
ns
fI
L = 1mH
Test Circuit (Figure 19)
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 4)
E
E
E
850
1.0
1.0
-
mJ
mJ
mJ
ON1
ON2
OFF
1.2
1.8
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
41
MAX
-
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 150 C
-
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= I
CE
C110
t
30
-
ns
rI
d(OFF)I
V
V
= 0.8 BV
= 15V
CE
GE
CES
Current Turn-Off Delay Time
Current Fall Time
t
360
100
860
2.0
2.5
2.0
50
450
210
-
ns
R
= 3Ω
G
t
ns
fI
L = 1mH
Test Circuit (Figure 19)
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 4)
Diode Forward Voltage
Diode Reverse Recovery Time
E
E
E
µJ
ON1
ON2
OFF
2.4
4
mJ
mJ
V
V
I
I
I
= 40A
2.5
65
40
0.43
1.2
EC
EC
EC
EC
t
= 40A, dI /dt = 100A/µs
EC
ns
rr
= 1.0A, dI /dt = 100A/µs
EC
38
ns
o
Thermal Resistance Junction To Case
Thermal Resistance Junction To Case
NOTES:
R
R
IGBT
-
C/W
θJC
o
Diode
-
C/W
θJC
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 17.
4. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
80
70
60
50
40
30
20
10
0
225
200
175
150
125
100
75
o
V
= 15V
GE
T
= 150 C, R = 3Ω, V
= 15V, L = 100µH
GE
J
G
PACKAGE
LIMIT
50
25
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
C
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
o
20
16
12
8
750
625
500
375
250
T
= 150 C, R = 3Ω, L = 1mH, V
= 480V
CE
J
G
o
V
= 360V, R = 3Ω, T = 125 C
G J
CE
100
10
1
I
SC
T
V
C
GE
o
75 C 15V
o
75 C
10V
15V
o
110 C
o
110 C 10V
f
= 0.05 / (t
+ t
d(ON)I
)
MAX1
d(OFF)I
f
= (P - P ) / (E
+ E
)
MAX2
D
C
ON2
OFF
P
= CONDUCTION DISSIPATION
C
t
SC
(DUTY FACTOR = 50%)
o
R
= 0.43 C/W, SEE NOTES
ØJC
4
2
5
10
40
80
10
11
12
13
14
15
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
300
250
200
150
100
50
300
DUTY CYCLE <0.5%, V
GE
PULSE DURATION = 250µs
= 15V
DUTY CYCLE <0.5%, V
GE
PULSE DURATION = 250µs
= 10V
250
200
150
100
50
o
T
= 150 C
C
o
T
= -55 C
o
o
C
T
= -55 C
T
= 150 C
C
C
o
T
= 25 C
C
o
T
= 25 C
C
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
12
6
R
= 3Ω, L = 1mH, V
CE
= 480V
o
G
R
= 3Ω, L = 1mH, V
= 480V
CE
G
o
T
= 25 C, T = 150 C, V
= 10V
GE
J
J
10
8
5
4
3
2
1
0
o
T
= 150 C; V
= 10V OR 15V
GE
J
6
o
o
T
= 25 C, T = 150 C, V = 15V
GE
J
J
4
2
o
T
= 25 C; V
= 10V OR 15V
J
GE
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
75
70
65
60
55
50
45
40
35
30
400
350
300
250
200
150
100
50
R
= 3Ω, L = 1mH, V = 480V
CE
G
R
= 3Ω, L = 1mH, V
= 480V
CE
G
o
o
T
= 25 C, T = 150 C, V
= 10V
GE
J
J
o
o
T
= 25 C, T = 150 C, V
= 10V
GE
J
J
o
o
T
= 25 C AND T = 150 C, V
= 15V
J
J
GE
o
o
T
= 25 C, T = 150 C, V
= 15V
J
J
GE
70
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
80
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
160
R
= 3Ω, L = 1mH, V
= 480V
CE
R
J
= 3Ω, L = 1mH, V
= 480V
CE
G
G
140
120
100
80
350
300
250
200
150
100
o
T
= 150 C, V
= 10V, V
= 15V
GE
GE
o
T
= 150 C, V
= 10V, V
= 15V
GE
J
GE
60
o
T
= 25 C, V
= 10V OR 15V
GE
J
40
o
= 25 C, V
T
= 10V, V
40
= 15V
J
GE
GE
20
0
10
20
30
40
50
60
70
80
0
10
20
30
50
60
70
80
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
300
o
I
= 1mA, R = 7.5Ω, T = 25 C
DUTY CYCLE <0.5%, V
CE
= 10V
G(REF)
L
C
14
12
10
8
PULSE DURATION = 250µs
250
200
150
100
50
o
T
= 150 C
C
V
= 600V
= 200V
CE
6
V
= 400V
V
CE
CE
4
o
T
= -55 C
C
2
o
T
= 25 C
C
0
0
0
50
100
150
200
250
300
4
5
6
7
8
9
10
11
Q , GATE CHARGE (nC)
V
, GATE TO EMITTER VOLTAGE (V)
G
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
200
60
50
40
30
20
10
0
o
T
= 25 C, dI /dt = 100A/µs
C
EC
t
rr
o
100 C
t
a
10
t
b
o
o
25 C
150 C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
1
5
10
30
V
, FORWARD VOLTAGE (V)
I
, FORWARD CURRENT (A)
EC
EC
FIGURE 15. VfDIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 16. RECOVERY TIMES vs FORWARD CURRENT
15.0
FREQUENCY = 1MHz
C
IES
12.5
10.0
7.5
5.0
2.5
0
C
C
OES
RES
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
0
10
0.5
0.2
0.1
-1
10
10
0.05
t
0.02
0.01
1
DUTY FACTOR, D = t / t
1
2
P
D
PEAK T = (P X Z
X R
) + T
θJC C
J
D
θJC
t
2
SINGLE PULSE
-2
-5
10
-4
10
-3
-2
-1
10
0
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 18. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Test Circuit and Waveforms
C
90%
OFF
L = 1mH
10%
ON2
RHRP3060
V
GE
E
E
V
R
= 3Ω
CE
G
90%
+
-
V
= 480V
DD
10%
d(OFF)I
I
CE
t
t
rI
t
fI
t
d(ON)I
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t ).
+ t
MAX1
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t are defined in Figure 20.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/Rθ .
D
D
JM JC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. Gate Voltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V
can result in
GEM
GE
P
= (V
x I )/2.
CE
C
CE
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON2
shown in Figure 20. E
is the integral of the
ON2
instantaneous power loss (I
x V ) during turn-on and
CE
CE
is the integral of the instantaneous power loss
E
(I
OFF
x V ) during turn-off. All tail losses are included in
CE
CE
the calculation for E
; i.e., the collector current equals
OFF
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
zero (I
= 0).
CE
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
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Rev. H4
相关型号：
HGT5A30N120CN
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247ST, 3 PIN
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