HI667A [ETC]
PNP-120V-1A20W|Bipolar Transistors ; PNP - 120V - 1A20W |双极晶体管\n
| 型号： | HI667A |
| 厂家： | 
ETC |
| 描述： | PNP-120V-1A20W|Bipolar Transistors
|
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE9007-A
Issued Date : 1998.01.25
Revised Date : 2000.11.01
Page No. : 1/2
HI-SINCERITY
MICROELECTRONICS CORP.
HI667A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI667A is designed for low frequency power amplifier.
(Ta=25°C)
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................... -120 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current............................................................................................................. -1 A
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
-120
-100
-5
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
V
V
IC=-100uA
IC=-1mA
IC=-10uA
-10
-1
-1.5
200
-
VCB=-100V
IC=-500mA, IB=-50mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, f=1MHz, IE=0
-
60
30
-
-
140
12
-
-
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
B
C
Range
60-120
100-200
HSMC Product Specification
Spec. No. : HE9007-A
Issued Date : 1998.01.25
Revised Date : 2000.11.01
Page No. : 2/2
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
Marking :
A
B
C
HSMC Logo
Part Number
Date Code
Product Series
D
H
Rank
Ink Mark
F
G
Style : Pin 1.Base 2.Collector 3.Emitter
3
I
K
E
2
1
J
3-Lead TO-251 Plastic Package
HSMC Package Code : I
*:Typical
Inches
Min. Max.
Millimeters
Inches
Millimeters
Min. Max.
DIM
DIM
Min.
Max.
0.55
1.50
0.60
2.40
6.80
7.20
Min.
0.2559
Max.
-
A
B
C
D
E
F
0.0177 0.0217
0.0354 0.0591
0.0177 0.0236
0.0866 0.0945
0.2520 0.2677
0.2677 0.2835
0.45
0.90
0.45
2.20
6.40
6.80
G
H
I
J
K
6.50
-
-
-
-
*0.1811
0.0354
0.0315
-
-
-
*4.60
0.90
0.80
5.50
0.2047 0.2165
5.20
Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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