HPND-4028 [ETC]
Beam Lead PIN Diodes for Phased Arrays and Switches (71K in pdf) ; 梁式引线PIN二极管的相控阵和交换机(PDF格式71K )型号: | HPND-4028 |
厂家: | ETC |
描述: | Beam Lead PIN Diodes for Phased Arrays and Switches (71K in pdf)
|
文件: | 总7页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Beam Lead PIN Diodes for
Phased Arrays and Switches
Technical Data
HPND-4018
HPND-4028
HPND-4038
690 (27)
650 (26)
Features
• Low Capacitance
0.025 pF Maximum at 1 MHz
330 (13)
260 (10)
Guaranteed Min./Max.
220 (9)
180 (7)
180 (7)
160 (6)
• Fast Switching
2.0nsec
• Low Resistance at Low Bias
1.5 Ω at IF = 10 mA (Typical)
110 (4.5)
90 (3.5)
280 (11)
240 (9)
• Rugged Construction
Typical 10 Gram Lead Pull
• Silicon Nitride Passivation
12 (0.47)
8 (0.32)
Description
TheHPND-4018,4028,and4038
beam lead PIN diodes are
designed for low capacitance, low
resistance, and fast switching at
60 (2.4)
40 (1.6)
DIMENSIONS IN µM (1/1000 INCH)
microwave frequencies. These
characteristics are achieved at
low bias levels for minimal power
consumption. Advanced process-
ing techniques ensure uniform
and consistent electrical perfor-
mance, allowing guaranteed
capacitance windows. This
translates to improved perfor-
mance in phased array
Outline 83
Maximum Ratings
Operating Temperature ................................................ -65°Cto+150°C
Storage Temperature .................................................... -65°Cto+200°C
Power Dissipation at T
= 25°C ........................................... 250mW
CASE
(Deratelinearlytozeroat150°C.)
Minimum Lead Strength............................... 4 grams pull on either lead
perMIL-S-19500,LTPD=20
applications.
Applications
array radar. The low capacitance
makes them ideal for circuits
requiring high isolation in the
series configuration. These
devices have been fully charac-
terized and S-parameters have
been provided.
These beam lead PIN diodes are
designed for use in stripline,
coplanar waveguide, or micro-
strip circuits. Applications
include phase shifting and
switching. The guaranteed
capacitance windows ensure
uniform performance in phased
Rugged construction and strong
beams ensure high assembly
yields while nitride passivation
and polyimide coating ensure
reliability. Standard Hi-Rel
programs are available for all
three devices.
2-86
5965-8878E
Electrical Specifications at TA = 25°C
Break-
Series
down
Reverse Forward
Carrier
Reverse
Series
Resistance
RS (Ω)
Capacitance Resistance
Voltage Current
VBR (V) IR (nA)
Voltage
VF (V)
Lifetime Recovery
Part
(pF)
RS (Ω)
τ (ns)
trr (ns)
Number
HPND-
Min. Max. Typ.
Max.
4.6
Min.
60
Max.
100
Max.
1.1
Typ.
26
Typ.
2.0*
2.6
Typ.
2.5
4018
4028
4038
0.015 0.025
0.025 0.045
0.045 0.065
4.0
2.3
1.5
3.0
60
100
1.1
36
2.0
2.0
60
100
1.1
45
2.4
1.0
Test
Conditions
VR =30V
f=1MHz
IF =10mA
f=100MHz
VR =VBR VR =50V IF =20mA IF =10mA *IF =10mA
IF =50mA
f=100MHz
Measure
IR = 6 mA
IF=5mA
VR =10V
IR≤ 10mA
90%recovery
Typical Parameters
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
–30V
0V
–30V
0V
5
0
0
0.75
0.60
0.45
0.30
1.0
0.75
0.50
1 mA
5 mA
10 mA
1 mA
5 mA
10 mA
0.25
0
0.15
0
1
10 18 20
1
10 18 20
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Typical Isolation and
Insertion Loss, HPND-4018.
Figure 2. Typical Isolation and
Insertion Loss, HPND-4028.
30
26
22
18
0.12
0.10
0.08
0.06
14
10
–30V
6
HPND-4038
0V
2
0.5
0.4
0.3
0.2
0.04
0.02
HPND-4028
HPND-4018
1 mA
5 mA
10 mA
0.1
0
100
0
1
10 20
0
10
20
30
FREQUENCY (GHz)
REVERSE VOLTAGE (V)
Figure 3. Typical Isolation and
Insertion Loss, HPND-4038.
Figure 4. Typical Capacitance vs.
Reverse Voltage ( at 1 MHz) .
2-87
Typical Parameters (cont.)
12
12
10
8
10
8
6
6
4
4
2
V
= 10V
= 20V
n
V
= 5V
n
2
0
V
= 10V
V = 15V
n
n
V
n
0
0
4
8
12
16
20
0
5
10
15
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
Figure 5. Typical Reverse Recovery
Time vs. Forward Current ( Series
Configuration) . HPND-4018.
Figure 6. Typical Reverse Recovery
Time vs. Forward Current ( Series
Configuration) . HPND-4028, HPND-
4038.
100
10
1000
HPND-4018
100
1
HPND-4028
10
0.1
HPND-4038
1.0
0.01
0.001
0.1
0
0.2
0.4
0.8
1.0
0.01
0.10
1.0
10
100
0.6
FORWARD VOLTAGE (V)
I
– FORWARD BIAS CURRENT (mA)
F
Figure 7. Typical Forward
Characteristics.
Figure 8. Typical RF Resistance vs.
Forward Bias Current ( at 100 MHz) .
2-88
Typical S-Parameters (in series configuration) at ZO = 50 Ω, 25°C
HPND-4018
IF = 1 mA
IF = 5 mA
dB
IF = 10 mA
S21/S12
Mag. Ang.
Freq.
S11/S22
S21/S12
Mag.
S11/S22
Mag. Ang.
S21/S12
Mag.
S11/S22
(MHz)
Mag.
Ang.
dB
Ang.
Ang.
Mag.
Ang.
dB
1000
2000
0.086
0.085
0.085
0.088
0.090
0.093
0.096
0.100
0.103
0.106
0.109
0.114
0.117
0.121
0.125
0.129
0.134
0.140
-1
5
-0.76
-0.76
-0.76
-0.74
-0.76
-0.76
-0.76
-0.76
-0.76
-0.76
-0.74
-0.76
-0.76
-0.78
-0.80
-0.80
-0.80
-0.84
0.917
0.917
0.918
0.919
0.918
0.918
0.918
0.918
0.918
0.918
0.919
0.918
0.917
0.916
0.913
0.914
0.914
0.909
-1
-2
0.046
0.047
0.051
0.056
0.060
0.066
0.071
0.076
0.081
0.086
0.090
0.096
0.100
0.105
0.111
0.116
0.122
0.130
8
-0.38
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.42
-0.42
-0.42
-0.44
-0.46
0.958
0.957
0.957
0.957
0.956
0.956
0.957
0.955
0.955
0.955
0.956
0.956
0.956
0.953
0.953
0.953
0.952
0.950
-1
-2
0.037
0.040
0.043
0.049
0055
11
23
32
38
43
46
48
50
51
51
52
52
52
53
53
53
53
53
-0.30 0.967
-0.32 0.965
-0.32 0.966
-0.32 0.966
-0.32 0.965
-0.32 0.965
-0.32 0.965
-0.32 0.965
-0.32 0.965
-0.32 0.964
-0.32 0.965
-0.32 0.965
-0.32 0.965
-0.34 0.962
-0.34 0.963
-0.34 0.962
-0.36 0.961
-0.36 0.960
-1
-2
17
25
31
36
39
42
43
45
46
47
46
47
48
48
49
48
49
3000
10
14
18
20
22
24
26
27
28
28
29
30
30
31
31
32
-4
-4
-4
4000
-5
-5
-5
5000
-6
-6
-6
6000
-7
-7
0.061
0.066
0.072
0.078
0.083
0.087
0.093
0.097
0.103
0.109
0.114
0.120
0.129
-7
7000
-8
-8
-8
8000
-10
-11
-12
-13
-14
-16
-17
-18
-19
-21
-22
-10
-11
-12
-13
-14
-16
-17
-18
-19
-21
-22
-10
-11
-12
-13
-15
-16
-17
-18
-19
-21
-22
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
HPND-4018
VR = 0 V
dB
VR = 10 V
VR = 30 V
Freq.
(MHz)
S11/S22
S21/S12
Mag.
S11/S22
Mag. Ang.
S21/S12
Mag.
S11/S22
Mag.
S21/S12
Mag. Ang.
Mag.
Ang.
Ang.
dB
Ang.
Ang.
dB
1000
2000
0.995
0.990
0.983
0.975
0.967
0.959
0.950
0.942
0.933
0.924
0.915
0.904
0.896
0.886
0.876
0.870
0.865
0.859
-3
-33.16
-27.54
-24.30
-22.28
-20.74
-19.50
-18.42
-17.60
-16.84
-16.32
-15.56
-15.00
-14.66
-14.04
-13.86
-13.44
-13.36
-13.44
0.022
0.042
0.061
0.077
0.092
0.106
0.120
0.132
0.144
0.153
0.167
0.178
0.185
0.199
0.203
0.213
0.215
0.213
84
76
71
68
64
62
59
57
54
52
49
48
45
43
41
37
35
32
0.999
0.998
0.996
0.993
0.991
0.987
0.982
0.979
0.972
0.966
0.959
0.951
0.944
0.936
0.925
0.920
0.913
0.907
-2
-4
-6
-8
-39.18 0.011
-32.78 0.023
-29.12 0.035
-26.76 0.046
93
85
83
81
78
76
73
71
68
67
63
62
59
55
53
48
45
41
1.000
0.998
0.997
0.995
0.992
0.988
0.985
0.982
0.975
0.969
0.960
0.953
0.946
0.940
0.929
0.924
0.917
0.911
-2
-4
-6
-8
-39.18 0.011
-33.16 0.022
-29.64 0.033
-27.14 0.044
93
87
84
82
79
77
74
72
69
68
64
63
60
56
54
49
46
42
-5
3000
-7
4000
-10
-12
-14
-16
-18
-21
-23
-25
-27
-29
-31
-33
-35
-36
-38
5000
-10 -24.90 0.057
-12 -23.24 0.069
-14 -21.84 0.081
-16 -20.74 0.092
-18 -19.84 0.102
-20 -19.10 0.111
-23 -18.14 0.124
-25 -17.40 0.135
-27 -16.96 0.142
-29 -16.20 0.155
-31 -15.92 0.160
-33 -15.46 0.169
-34 -15.36 0.171
-36 -15.50 0.168
-10 -25.36 0.054
-12 -23.76 0.065
-14 -22.28 0.077
-16 -21.22 0.087
-18 -20.28 0.097
-20 -19.50 0.106
-22 -18.58 0.118
-24 -17.80 0.129
-26 -17.34 0.136
-29 -16.60 0.148
-31 -16.26 0.154
-32 -15.82 0.162
-34 -15.76 0.163
-36 -15.92 0.160
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
2-89
Typical S-Parameters (cont.)
HPND-4028
IF = 1 mA
IF = 5 mA
dB
IF = 10 mA
S21/S12
Mag. Ang.
Freq.
S11/S22
S21/S12
Mag.
S11/S22
S21/S12
Mag.
S11/S22
(MHz)
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Ang.
Mag.
Ang.
dB
1000
2000
0.046
0.048
0.052
0.058
0.063
0.069
0.075
0.081
0.087
0.092
0.097
0.103
0.107
0.112
0.119
0.123
0.129
0.139
7
-0.38
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.40
-0.42
-0.42
-0.44
-0.44
-0.46
0.958
0.956
0.957
0.957
0.956
0.956
0.956
0.955
0.956
0.956
0.956
0.956
0.957
0.954
0.953
0.952
0.952
0.950
-1
-2
0.031
0.036
0.041
0.049
0.057
0.064
0.070
0.077
0.084
0.089
0.095
0.101
0.106
0.110
0.117
0.122
0.130
0.139
17
33
43
49
54
57
60
60
61
61
61
60
59
59
58
57
56
55
-0.24
-0.26
-0.26
-0.26
-0.26
-0.26
-0.26
-0.28
-0.28
-0.28
-0.26
-0.26
-0.26
-0.30
-0.28
-0.28
-0.30
-0.32
0.973
0.971
0.972
0.971
0.971
0.971
0.971
0.970
0.970
0.970
0.971
0.971
0.971
0.968
0.969
0.969
0.967
0.965
-1
-2
0.027
0.033
0.040
0.047
0.055
0.063
0.070
0.076
0.083
0.089
0.095
0.101
0.105
0.111
0.117
0.123
0.129
0.140
19
37
47
53
58
60
62
63
63
63
63
62
62
61
60
60
57
56
-0.20
-0.22
-0.22
-0.22
-0.22
-0.24
-0.22
-0.24
-0.24
-0.24
-0.22
-0.22
-0.22
-0.24
-0.26
-0.26
-0.26
-0.28
0.978
0.975
0.975
0.975
0.975
0.974
0.975
0.974
0.974
0.974
0.975
0.975
0.975
0.973
0.972
0.972
0.971
0.970
-1
-2
20
29
36
42
46
48
50
51
52
53
52
51
51
51
51
49
48
3000
-4
-4
-4
4000
-5
-5
-5
5000
-6
-6
-6
6000
-7
-7
-7
7000
-8
-8
-8
8000
-9
-9
-9
9000
-11
-12
-13
-14
-15
-17
-18
-19
-20
-22
-11
-12
-13
-14
-15
-17
-18
-19
-20
-21
-11
-12
-13
-14
-15
-17
-18
-19
-20
-22
10000
11000
12000
13000
14000
15000
16000
17000
18000
HPND-4028
VR = 0 V
dB
VR = 10 V
dB
VR = 30 V
dB Mag. Ang.
Freq.
(MHz)
S11/S22
Mag. Ang.
S21/S12
Mag.
S11/S22
Mag. Ang.
S21/S12
Mag. Ang.
S11/S22
S21/S12
Ang.
Mag.
Ang.
1000
2000
0.997
0.988
0.974
0.958
0.940
0.921
0.898
0.879
0.857
0.836
0.816
0.795
0.778
0.761
0.744
0.733
0.720
0.709
-4
-27.54
-21.74
-18.36
-16.10
-14.48
-13.20
-12.16
-11.36
-10.64
-10.12
-9.54
0.042
0.082
0.121
0.157
0.189
0.219
0.247
0.271
0.294
0.312
0.334
0.351
0.361
0.379
0.383
0.397
0.401
0.399
86
79
74
69
64
70
56
52
48
46
42
40
37
33
31
28
26
24
0.999
0.997
0.994
0.991
0.986
0.979
0.972
0.965
0.954
0.942
0.931
0.917
0.904
0.892
0.876
0.867
0.855
0.846
-3
-33.16
-27.34
-23.62
-21.12
-19.26
-17.66
-16.26
-15.20
-14.20
-13.44
-12.58
-11.84
-11.44
-10.80
-10.56
-10.12
-9.96
0.022
0.043
0.066
0.088
0.109
0.131
0.054
0.174
0.195
0.213
0.235
0.256
0.268
0.289
0.297
0.312
0.318
0.319
91
86
83
81
78
75
72
70
67
65
61
59
56
52
50
46
44
42
1.000
0.998
0.996
0.992
0.987
0.982
0.976
0.970
0.960
0.950
0.937
0.926
0.913
0.903
0.888
0.881
0.869
0.861
-2
-33.98 0.020 91
-28.18 0.039 86
-24.44 0.060 84
-21.94 0.080 82
-20.10 0.099 79
-18.42 0.120 76
-17.08 0.140 73
-15.92 0.160 71
-14.96 0.179 68
-14.20 0.195 66
-13.32 0.216 62
-12.62 0.234 60
-12.20 0.246 57
-11.52 0.266 54
-11.26 0.274 52
-10.80 0.289 48
-10.64 0.294 46
-10.64 0.294 44
-7
-6
-5
3000
-11
-14
-17
-21
-24
-26
-29
-32
-35
-37
-40
-42
-44
-46
-48
-50
-8
-7
4000
-10
-13
-16
-19
-21
-24
-27
-30
-33
-36
-38
-41
-43
-45
-47
-10
-13
-15
-18
-21
-23
-26
-29
-32
-34
-37
-39
-42
-44
-46
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
-9.10
-8.86
-8.44
-8.34
-8.04
-7.94
-8.00
-9.94
2-90
Typical S-Parameters (cont.)
HPND-4038
IF = 1 mA
IF = 5 mA
dB
IF = 10 mA
S21/S12
Mag. Ang.
Freq.
S11/S22
S21/S12
Mag.
S11/S22
S21/S12
Mag.
S11/S22
(MHz)
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Ang.
Mag.
Ang.
dB
1000
2000
0.028
0.032
0.037
0.045
0.052
0.060
0.067
0.073
0.081
0.087
0.092
0.099
0.104
0.110
0.118
0.123
0.132
0.141
15
34
47
55
61
65
67
69
70
71
71
70
70
69
67
66
64
62
-0.22
-0.24
-0.22
-0.22
-0.24
-0.24
-0.24
-0.24
-0.24
-0.24
-0.22
-0.24
-0.22
-0.26
-0.24
-0.24
-0.26
-0.26
0.976
0.974
0.975
0.975
0.974
0.974
0.974
0.974
0.973
0.974
0.975
0.974
0.975
0.972
0.973
0.973
0.972
0.972
-1
-2
0.019
0.026
0.034
0.042
0.051
0.059
0.067
0.074
0.081
0.088
0.094
0.100
0.106
0.112
0.119
0.125
0.133
0.143
28
50
61
67
72
74
76
76
77
77
77
76
75
74
72
71
68
66
-0.12
-0.16
-0.14
-0.14
-0.16
-0.16
-0.16
-0.16
-0.16
-0.16
-0.16
-0.16
-0.14
-0.16
-0.16
-0.16
-0.16
-0.18
0.987
0.984
0.985
0.985
0.984
0.984
0.984
0.983
0.984
0.982
0.984
0.984
0.985
0.982
0.983
0.982
0.982
0.980
-1
-2
0.017
0.024
0.033
0.042
0.051
0.059
0.067
0.073
0.081
0.089
0.094
0.101
0.107
0.113
0.120
0.126
0.133
0.143
35
56
66
70
75
77
78
78
78
79
79
77
76
75
73
72
69
67
-0.10 0.989
-0.14 0.986
-0.12 0.988
-0.12 0.987
-0.14 0.986
-0.14 0.986
-0.12 0.987
-0.14 0.986
-0.14 0.986
-0.14 0.986
-0.14 0.986
-0.14 0.986
-0.12 0.987
-0.16 0.984
-0.14 0.985
-0.16 0.984
-0.16 0.984
-0.16 0.983
-1
-2
3000
-3
-3
-4
4000
-5
-5
-5
5000
-6
-6
-6
6000
-7
-7
-7
7000
-8
-8
-8
8000
-9
-9
-9
9000
-10
-11
-12
-14
-15
-16
-17
-18
-19
-20
-10
-11
-12
-14
-15
-16
-17
-18
-19
-20
-10
-11
-12
-14
-15
-16
-17
-18
-19
-20
10000
11000
12000
13000
14000
15000
16000
17000
18000
HPND-4038
VR = 0 V
dB
VR = 10 V
dB
VR = 30 V
Freq.
(MHz)
S11/S22
S21/S12
Mag.
S11/S22
S21/S12
Mag. Ang.
S11/S22
Mag. Ang.
S21/S12
Mag. Ang.
Mag.
Ang.
Ang.
Mag.
Ang.
dB
1000
2000
0.993
0.976
0.953
0.923
0.890
0.857
0.822
0.790
0.757
0.727
0.697
0.668
0.643
0.620
0.599
0.584
0.570
0.556
-5
-23.10
-17.28
-14.04
-11.88
-10.36
-9.20
-8.28
-7.58
-7.00
-6.54
-6.10
-5.74
-5.56
-5.22
-5.16
-4.90
-4.80
-4.84
0.070
0.137
0.199
0.255
0.304
0.347
0.386
0.418
0.447
0.471
0.496
0.517
0.528
0.549
0.553
0.569
0.576
0.574
83
76
70
64
58
53
49
45
41
38
34
32
29
26
24
21
19
17
0.998
0.995
0.990
0.982
0.973
0.962
0.947
0.933
0.915
0.897
0.877
0.854
0.834
0.813
0.793
0.778
0.762
0.747
-3
-7
-28.88 0.036
-22.86 0.072
89
84
81
78
74
71
68
65
61
58
54
52
49
45
43
39
37
35
0.999
0.996
0.992
0.986
0.977
0.968
0.956
0.945
0.928
0.912
0.892
0.874
0.854
0.839
0.818
0.805
0.790
0.776
-3
-6
-9
-29.90 0.032
-23.76 0.065
-20.18 0.098
90
85
82
79
75
73
69
66
63
61
57
54
51
48
45
42
40
37
-10
-15
-19
-23
-27
-31
-34
-38
-41
-44
-46
-49
-51
-53
-55
-57
-59
3000
-10 -19.26 0.109
-13 -16.78 0.145
-16 -14.90 0.180
-20 -13.40 0.214
-23 -12.08 0.249
-27 -11.06 0.280
-30 -10.12 0.312
-34
-37
-41
-44
-47
-50
-53
-55
-58
4000
-12 -17.74 0.130
-15 -15.88 0.161
-19 -14.30 0.193
-22 -12.96 0.225
-25 -11.92 0.254
-29 -10.94 0.284
-32 -10.22 0.309
-35
-38
-42
-45
-48
-50
-53
-55
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
-9.40
-8.62
-8.00
-7.60
-7.04
-6.82
-6.42
-6.22
-6.18
0.339
0.371
0.399
0.417
0.445
0.457
0.478
0.489
0.491
-9.44
-8.76
-8.34
-7.76
-7.50
-7.10
-6.88
-6.86
0.338
0.365
0.383
0.410
0.422
0.442
0.453
0.454
2-91
away from the substrate during
the bonding process due to the
deformation of the beam by the
bonding tool. This effect is
beneficial as it provides stress
relief for the diode during thermal
cycling of the substrate. The
coefficient of expansion of some
substrate materials, specifically
soft substrates, is such that some
bugging is essential if the circuit is
to be operated over wide tempera-
ture extremes.
infrared heat lamp for 5–10
minutes on clean filter paper.
Freon degreaser, or its locally
approved equivalent, may replace
trichloroethane for light organic
contamination.
• Ultrasonic cleaning is not
recommended.
• Acid solvents should not be
used.
Bonding and Handling
Procedures for Beam
Lead Diodes
1. Storage
Under normal circumstances,
storage of beam lead diodes in HP
supplied waffle/gel packs is
sufficient. In particularly dusty or
chemically hazardous environ-
ments, storage in an inert atmo-
sphere desiccator is advised.
4. Bonding
Thermocompression: See
Application Note 979 “The Han-
dling and Bonding of Beam Lead
Devices Made Easy”. This method
is good for hard substrates only.
2. Handling
In order to avoid damage to beam
lead devices, particular care must
be exercised during inspection,
testing, and assembly. Although
the beam lead diode is designed to
have exceptional lead strength, its
small size and delicate nature
requires that special handling
techniques be observed so that
the devices will not be mechani-
cally or electrically damaged. A
vacuum pickup is recommended
for picking up beam lead devices,
particularly larger ones, e.g.,
quads. Care must be exercised to
assure that the vacuum opening of
the needle is sufficiently small to
avoid passage of the device
through the opening. A #27 tip is
recommended for picking up
single beam lead devices. A 20X
magnification is needed for
precise positioning of the tip on
the device. Where a vacuum
pickup is not used, a sharpened
wooden Q-tip dipped in isopropyl
alcohol is very commonly used to
handle beam lead devices.
Thick metal clad ground planes
restrict the thermal expansion of
the dielectric substrates in the X-Y
axis. The expansion of the dielec-
tric will then be mainly in the Z
axis, which does not affect the
beam lead device. An alternate
solution to the problem of dielec-
tric ground plane expansion is to
heat the substrate to the maxi-
mum required operating tempera-
ture during the beam lead attach-
ment. Thus, the substrate is at
maximum expansion when the
device is bonded. Subsequent
cooling of the substrate will cause
bugging, similar to bugging in
thermocompression bonding or
epoxy bonding. Other methods of
bugging are preforming the leads
during assembly or prestressing
the substrate.
Wobble: This method picks up
the device, places it on the
substrate and forms a thermo-
compression bond all in one
operation. This is described in the
latest version of MIL-STD-883,
Method 2017, and is intended for
hard substrates only.
Resistance Welding or
Parallel-GAP Welding: To make
welding on soft substrates easier,
a low pressure welding head is
recommended. Suitable equip-
ment is available from HUGHES,
Industrial Products Division in
Carlsbad, CA.
Epoxy: With solvent free, low
resistivity epoxies (available from
ABLESTIK and improvements in
dispensing equipment, the quality
of epoxy bonds is sufficient for
many applications.
3. Cleaning
5. Lead Stress
For organic contamination use a
warm rinse of trichloroethane, or
its locally approved equivalent,
followed by a cold rinse in ac-
etone and methanol. Dry under
In the process of bonding a beam
lead diode, a certain amount of
“bugging” occurs. The term
bugging refers to the chip lifting
2-92
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