HSE11 [ETC]
;
| 型号： | HSE11 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总3页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AED-208-162A(Z)
HSE11
GaAs Schottky Barrier Diode for
SHF Mixer
Rev. 1
Sep. 1994
Features
Outline
• Low noise GaAs schottky.
• Low capacitance. (C =0.4pF max)
Cathode mark
1
2
Ordering Information
1. Cathode
2. Anode
Type No.
Mark
Package Code
HSE11
Cathode mark
ERP
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
I F
4.0
50
V
Forward current
mA
mA
°C
°C
°C
Peak forward current
Junction temperature
Lead temperature
Storage temperature
IFM
150
125
230
T
j
T *
l
T
-55 to +125
stg
* Value at the nearest point from body for 10sec max. (one time)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
—
Typ
—
Max
1.0
—
Unit
V
Test Condition
I F= 50 mA
Forward voltage
Reverse voltage
Capacitance
VF
VR
C
4.0
—
—
V
I R = 10 µA
—
0.4
pF
VR = 0 V, f = 1 MHz
rs=50VF3 -150.75VF2 +100.75VF1
VF1: IF=1.0mA , VF2: IF=2.7mA
Series resistance
r
—
—
—
1.3
—
Ω
s
VF3: IF=20mA
ESD capability
—
25
V
* C= 25pF
* Failure criterion ; I R ≥ 1µA at VR = 2V
HSE11
10-1
10-2
10-8
10-9
10-3
10-4
-10
10
10-11
10-5
10-6
10-12
10-13
0.6
6
8
10
0
0.2
0.4
0.8
1.0
0
2
4
Reverse voltage VR (V)
Forward voltage VF (V)
Fig.1 Forward current Vs.
Forward voltage
Fig.2 Reverse current Vs.
Reverse voltage
f=1MHz
1.0
-1
10
-2
10
-1
1.0
10
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs.
Reverse voltage
HSE11
1
.8
1.5
.6
2
.4
3
16GHz
4
12GHz
.2
5
8GHz
4GHz
10
.2
.4
1GHz
.6 .8
1
1.5
2
3
4 5
10
0
–10
–5
–4
–.2
–3
1 (mA)
2 (mA)
3 (mA)
4 (mA)
6 (mA)
8 (mA)
–.4
–2
–.6
–1.5
–.8
–1
Fig.4 S Parameter
Unit: mm
Package Dimensions
Cathode Mark (Silver)
1
2
1.0
3.5 ± 0.15
1 Cathode
2 Anode
HITACHI Code ERP
JEDEC Code
EIAJ Code
Weight (g)
—
—
0.002
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