HSMS-286L/P/R [ETC]
Surface Mount RF Schottky Detector Diodes in SOT-363 (SC-70. 6 Lead) (101K in pdf) ; 表面贴装射频肖特基二极管检测器采用SOT -363 （ SC - 70 6引线） （PDF格式101K ）\n
| 型号： | HSMS-286L/P/R |
| 厂家： | 
ETC |
| 描述： | Surface Mount RF Schottky Detector Diodes in SOT-363 (SC-70. 6 Lead) (101K in pdf)
|
| 文件： | 总12页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount RF Schottky
Detector Diodes in SOT-363
(SC-70, 6 Lead)
Technical Data
HSMS-285L/P
HSMS-286L/P/R
Features
Package Lead Code
Identification
( Top View)
Description
Hewlett-Packard’s HSMS-285L/P
family of zero bias Schottky detector
diodes and the HSMS-286L/P/R
family of DC biased detector diodes
have been designed and optimized
for use from 915 MHz to 5.8 GHz.
They are ideal for RF/ID and RF Tag,
cellular and other consumer applica-
tions requiring small and large signal
detection, modulation, RF to DC
conversion or voltage doubling.
• Surface Mount SOT-363
Package
• High Detection Sensitivity:
Up to 50 mV/µW at 915 MHz
Up to 35 mV/µW at 2.45 GHz
Up to 25 mV/µW at 5.80 GHz
BRIDGE
QUAD
UNCONNECTED
TRIO
6
1
6
1
5
4
6
5
4
• Low Flicker Noise:
2
3
1
2
3
L
P
-162 dBV/Hz at 100 Hz
RING
• Low FIT ( Failure in Time)
Rate*
QUAD
5
4
Available in various package
configurations, these two families of
detector diodes provide low cost
solutions to a wide variety of design
problems. Hewlett-Packard’s
manufacturing techniques assure
that when multiple diodes are
mounted into a single SOT-363
package, they are taken from
adjacent sites on the wafer, assuring
the highest possible degree of
match.
• Tape and Reel Options
Available
2
3
R
* For more information see the
Surface Mount Schottky
Reliability Data Sheet.
DC Electrical Specifications, TC = +25°C, Single Diode
Part
Number
HSMS-
Package
Marking
Code[1]
Maximum Forward
Voltage V
Typical
Capacitance CT
( pF)
Lead
Code
F
Configuration
( mV)
285L
285P
286L
286P
286R
PL
PP
TL
TP
ZZ
L
P
L
P
Unconnected Trio
Bridge Quad
Unconnected Trio
Bridge Quad
Ring Quad
150
250
250
350
0.30
0.25
R
Test Conditions
IF = 0.1 mA[2] IF = 1.0 mA[2] V = 0.5V to -1.0V
R
f = 1 MHz[3]
Notes:
1. Package marking code is laser marked.
2. ∆VF for diodes in trios and quads is 15.0 mV maximum at 1.0 mA.
3. ∆CT for diodes in trios and quads is 0.05 pF maximum at -0.5 V.
2
RF Electrical Parameters, TC = +25oC, Single Diode
Sensitivity
Typical Tangential
TSS ( dBm) @ f =
γ
Typical Video
Part
Number
Typical Voltage Sensitivity
( mV/µW) @ f =
Resistance R ( KΩ)
v
HSMS-
915 MHz 2.45 GHz 5.8 GHz 915 MHz 2.45 GHz 5.8 GHz
-57 -56 -55 40 30 22
285L
285P
8.0
5.0
Test
Conditions
Video Bandwidth = 2 MHz
Zero Bias
Power in = -40 dBm
RL = 100 KΩ, Zero Bias
50 35 25
286L
286P
-57
-56
-55
286R
Test
Conditions
Video Bandwidth = 2 MHz
Power in = –40 dBm
RL = 100 KΩ, Ib = 5 µA
Ib = 5 µA
Absolute Maximum Ratings, TC = 25ºC, Single Diode
Symbol Parameter
ESD WARNING: Handling
Precautions Should Be Taken
To Avoid Static Discharge.
Unit Absolute Maximum[1]
PIV
TJ
Peak Inverse Voltage
V
°C
2.0
150
Junction Temperature
Storage Temperature
Operating Temperature
Thermal Resistance [2]
TSTG
TOP
θjc
°C
-65 to 150
-65 to 150
140
°C
°C/W
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the pack-
age pins where contact is made to the circuit board.
Equivalent Circuit Model
SPICE Parameters
HSMS-285A Series, HSMS-286A Series
Parameter
Units
V
HSMS-285A
HSMS-286A
7.0
Single Diode
BV
CJO
EG
IBV
IS
3.8
0.18
0.08 pF
pF
eV
A
0.18
0.69
0.69
3 x 10E -4
3 x 10E -6
1.06
10E -5
5 x 10E -8
1.08
R
2 nH
j
A
N
R
S
RS
Ω
25
5.0
PB (V )
V
0.35
0.65
J
PT (XTI)
M
2
2
0.18 pF
0.5
0.5
RS = series resistance (see Table of SPICE parameters)
8.33 X 10-5 nT
Rj =
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = identity factor (see table of SPICE parameters)
3
Typical Parameters, Single Diode
100
100
10
100
I
(left scale)
F
TA = +85°C
TA = +25°C
TA = –55°C
10
1
10
1
10
0.1
0.01
.1
∆V (right scale)
F
.01
1
0.05
1
0.25
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
– FORWARD VOLTAGE (V)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.10
0.15
0.20
V
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
F
Figure 1. +25°C Forward Current vs.
Forward Voltage, HSMS-285A Series.
Figure 2. Forward Current vs. Forward Figure 3. Forward Voltage Match,
Voltage at Temperature, HSMS-286A
Series.
HSMS-286A Series.
10000
30
10,000
R
= 100 KΩ
L
R
= 100 KΩ
20 µA
5 µA
L
915 MHz
10 µA
1000
100
10
10
2.45 GHz
915 MHz
1000
100
2.45 GHz
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
5.8 GHz
1
10
1
5.8 GHz
R
= 100 KΩ
L
1
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
0.3
0.3
-50
-50
-40
-30
-20
-10
0
-40
-30
–40
–30
–20
–10
0
10
POWER IN (dBm)
POWER IN (dBm)
POWER IN (dBm)
Figure 4. +25°C Output Voltage vs.
Figure 5. +25°C Expanded Output
Voltage vs. Input Power. See Figure 4.
Figure 6. Dynamic Transfer
Characteristic as a Function of DC Bias,
HSMS-286A.
Input Power, HSMS-285A Series at Zero
Bias, HSMS-286A Series at 3 µA Bias.
3.1
40
35
FREQUENCY = 2.45 GHz
2.9
P
R
= -40 dBm
= 100 KΩ
IN
L
2.7
2.5
2.3
30
25
2.1
1.9
20
1.7
1.5
1.3
1.1
0.9
Input Power =
15
10
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
R
= 100 KΩ
L
5
0
10 20 30 40 50 60 70 80 90 100
.1
1
10
100
TEMPERATURE (°C)
BIAS CURRENT (µA)
Figure 7. Voltage Sensitivity as a
Function of DC Bias Current,
HSMS-286A.
Figure 8. Output Voltage vs.
Temperature, HSMS-285A Series.
4
Applications Information
Introduction
of the total current flowing
through it.
altered, and at the same time CJ
and RS will be changed. In general,
very low barrier height diodes
(with high values of IS, suitable for
zero bias applications) are realized
on p-type silicon. Such diodes
suffer from higher values of RS
than do the n-type. Thus, p-type
diodes are generally reserved for
detector applications (where very
high values of RV swamp out high
RS) and n-type diodes are used for
mixer applications (where high
L.O. drive levels keep RV low).
8.33 x 10-5 n T
Rj = –––––––––––– = RV – Rs
IS + Ib
Hewlett-Packard’s HSMS-285L and
HSMS-285P zero bias Schottky
diodes have been developed
specifically for low cost, high
volume detector applications
where bias current is not available.
The HSMS-286L, HSMS-286P and
HSMS-286R DC biased Schottky
diodes have been developed for
low cost, high volume detector
applications where stability over
temperature is an important
design consideration.
0.026
= ––––– at 25°C
IS + Ib
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in °K
IS = saturation current (see
table of SPICE parameters)
Ib = externally applied bias
current in amps
Measuring Diode Linear
Parameters
Schottky Barrier Diode
Characteristics
IS is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5 µA for very low
barrier diodes.
The measurement of the five
elements which make up the
equivalent circuit for a packaged
Schottky diode (see Figure 10) is a
complex task. Various techniques
are used for each element. The
task begins with the elements of
the diode chip itself.
Stripped of its package, a Schottky
barrier diode chip consists of a
metal-semiconductor barrier
formed by deposition of a metal
layer on a semiconductor. The
most common of several different
types, the passivated diode, is
shown in Figure 9, along with its
equivalent circuit.
The Height of the Schottky
Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
C
P
R
S
METAL
L
R
V
P
V – IRS
–––––––
PASSIVATION
PASSIVATION
R
S
(
)
– 1)
N-TYPE OR P-TYPE EPI LAYER
0.026
I = IS (e
R
j
SCHOTTKY JUNCTION
C
j
C
J
N-TYPE OR P-TYPE SILICON SUBSTRATE
On a semi-log plot (as shown in
the HP catalog) the current graph
will be a straight line with inverse
slope 2.3 x 0.026 = 0.060 volts per
cycle (until the effect of RS is seen
in a curve that droops at high
current). All Schottky diode curves
have the same slope, but not
necessarily the same value of
current for a given voltage. This is
determined by the saturation
current, IS, and is related to the
barrier height of the diode.
FOR THE HSMS-285A or HSMS-286A SERIES
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
C
L
= 0.08 pF
= 2 nH
= 0.18 pF
= 25 Ω
P
P
C
R
R
J
S
V
Figure 9. Schottky Diode Chip.
= 9 KΩ
RS is the parasitic series resistance
of the diode, the sum of the
bondwire and leadframe
Figure 10. Equivalent Circuit of a
Schottky Diode.
resistance, the resistance of the
bulk layer of silicon, etc. RF
energy coupled into RS is lost as
heat —it does not contribute to
the rectified output of the diode.
CJ is parasitic junction capacitance
of the diode, controlled by the
thickness of the epitaxial layer and
the diameter of the Schottky
contact. Rj is the junction
RS is perhaps the easiest to
measure accurately. The V-I curve
is measured for the diode under
forward bias, and the slope of the
curve is taken at some relatively
high value of current (such as
5 mA). This slope is converted into
Through the choice of p-type or
n-type silicon, and the selection of a resistance Rd.
metal, one can tailor the
characteristics of a Schottky
diode. Barrier height will be
0.026
RS = Rd – ––––––
If
resistance of the diode, a function
5
RV and CJ are very difficult to
measure. Consider the impedance
of CJ = 0.16 pF when measured at
LP and CP are best measured on
the HP8753C, with the diode
terminating a 50 Ω line on the
Output voltage can be virtually
doubled and input impedance
(normally very high) can be halved
1 MHz — it is approximately 1 MΩ. input port. The resulting tabulation through the use of the voltage
For a well designed zero bias
Schottky, RV is in the range of 5 to
25 KΩ, and it shorts out the
of S11 can be put into a microwave
linear analysis program having the
five element equivalent circuit
doubler circuit[4].
In the design of such detector
circuits, the starting point is the
equivalent circuit of the diode, as
shown in Figure 10. Of interest in
the design of the video portion of
the circuit is the diode’s video
junction capacitance. Moving up to with RV, CJ and RS fixed. The
a higher frequency enables the
measurement of the capacitance,
but it then shorts out the video
resistance. The best measurement
technique is to mount the diode in
series in a 50 Ω microstrip test
circuit and measure its insertion
loss at low power levels (around
-20 dBm) using an HP8753C
network analyzer. The resulting
display will appear as shown in
Figure 11.
optimizer can then adjust the
values of LP and CP until the
calculated S11 matches the
measured values. Note that
extreme care must be taken to de- impedance —the other four
embed the parasitics of the 50 Ω
elements of the equivalent circuit
disappear at all reasonable video
frequencies. In general, the lower
the diode’s video impedance, the
better the design.
test fixture.
Detector Circuits
When DC bias is available,
Schottky diode detector circuits
can be used to create low cost RF
and microwave receivers with a
sensitivity of -55 dBm to
-57 dBm.[1] Moreover, since
external DC bias sets the video
impedance of such circuits, they
display classic square law
DC BIAS
L
1
-10
0.16 pF
Z-MATCH
NETWORK
VIDEO
OUT
RF
IN
50 Ω
-15
50 Ω
-20
-25
response over a wide range of
input power levels[2,3]. These
circuits can take a variety of
forms, but in the most simple case
they appear as shown in Figure 12.
This is the basic detector circuit
used with the HSMS-286X family
of diodes.
50 Ω 9 KΩ
DC BIAS
-30
50 Ω
-35
-40
L
1
Z-MATCH
NETWORK
VIDEO
OUT
RF
IN
3
10
100
1000 3000
FREQUENCY (MHz)
Figure 11. Measuring CJ and RV.
Where DC bias is not available, a
zero bias Schottky diode is used to
replace the conventional Schottky
in these circuits, and bias choke L1
is eliminated. The circuit then is
reduced to a diode, an RF
impedance matching network and
(if required) a DC return choke
and a capacitor. This is the basic
detector circuit used with the
HSMS-285A family of diodes.
At frequencies below 10 MHz, the
video resistance dominates the
loss and can easily be calculated
from it. At frequencies above 300
MHz, the junction capacitance sets
the loss, which plots out as a
straight line when frequency is
plotted on a log scale. Again,
calculation is straightforward.
Figure 12. Basic Detector
Circuits.
The situation is somewhat more
complicated in the design of the
RF impedance matching network,
which includes the package
inductance and capacitance
(which can be tuned out), the
series resistance, the junction
[1]
Hewlett-Packard Application Note 923, Schottky Barrier Diode Video Detectors.
Hewlett-Packard Application Note 986, Square Law and Linear Detection.
Hewlett-Packard Application Note 956-5, Dynamic Range Extension of Schottky Detectors.
Hewlett-Packard Application Note 956-4, Schottky Diode Voltage Doubler.
[2]
[3]
[4]
6
capacitance and the video
Six Lead Circuits
wafer. A similar circuit can be
realized using the HSMS-286R ring
quad.
resistance. Of these five elements
of the diode’s equivalent circuit,
the four parasitics are constants
and the video resistance is a
function of the current flowing
through the diode.
The differential detector is often
used to provide temperature
compensation for a Schottky
detector, as shown in Figure 13.
Other configurations of six lead
Schottky products can be used to
solve circuit design problems
while saving space and cost.
bias
26,000
matching
network
RV ≈ ––––––
IS + Ib
differential
amplifier
Thermal Considerations
The obvious advantage of the
SOT-363 over the SOT-143 is
combination of smaller size and
two extra leads. However, the
copper leadframe in the SOT-363
has a thermal conductivity four
times higher than the Alloy 42
leadframe of the SOT-143, which
enables it to dissipate more
power.
where
IS = diode saturation current
in µA
Ib = bias current in µA
Figure 13. Voltage Doubler.
Saturation current is a function of
the diode’s design,[5] and it is a
constant at a given temperature.
For the HSMS-285X series, it is
typically 3 to 5 µA at 25°C. For the
medium barrier HSMS-2860 family,
saturation current at room
temperature is on the order of
50 nA.
These circuits depend upon the
use of two diodes having matched
V characteristics over all operat-
f
ing temperatures. This is best
achieved by using two diodes in a
single package, such as the
HSMS-2825 in the larger SOT-143
package. However, such circuits
generally use single diode detec-
tors, either series or shunt
The maximum junction tempera-
ture for these three families of
Schottky diodes is 150°C under all
operating conditions. The follow-
ing equation, equation 1, applies
to the thermal analysis of diodes:
Together, saturation and (if used)
bias current set the detection
sensitivity, video resistance and
input RF impedance of the
Schottky detector diode. Since no
external bias is used with the
HSMS-285A series, a single
mounted diode. The voltage
doubler (reference [4]) offers the
advantage of twice the output
voltage for a given input power.
The two concepts can be com-
bined into the differential voltage
doubler, as shown in Figure 14.
Tj = (V If + PRF) θjc + Ta
f
where
Tj = junction temperature
Ta = diode case temperature
θjc = thermal resistance
transfer curve at any given
frequency is obtained, as shown in
Figure 4. Where bias current is
used, some tradeoff in sensitivity
and square law dynamic range is
seen, as shown in Figure 6 and
described in reference [3].
bias
V I = DC power dissipated
f f
PRF = RF power dissipated
differential
amplifier
Equation ( 1) .
Note that θjc, the thermal resis-
tance from diode junction to the
foot of the leads, is the sum of two
component resistances,
The most difficult part of the
design of a detector circuit is the
input impedance matching
network. A discussion of such
circuits can be found in the data
sheet for the HSMS-285A/HSMS-
286A single SOT-323 detector
diodes (Hewlett-Packard
matching
network
Figure 14. Differential Voltage
Doubler.
θjc = θpkg + θchip
Here, all four diodes of the
HSMS-286P are matched in their
V characteristics, because they
Equation ( 2) .
publication 5965-4704E).
f
came from adjacent sites on the
[5]
Hewlett-Packard Application Note 969, An Optimum Zero Bias Schottky Detector Diode.
7
Package thermal resistance for
the SOT-363 package is approxi-
mately 100°C/W, and the chip
thermal resistance for these three
families of diodes is approxi-
mately 40°C/W. The designer will
have to add in the thermal
resistance from diode case to
ambient —a poor choice of circuit
board material or heat sink design
can make this number very high.
Temperature Compensation
The compression of the detector’s such as those given in Figures 15
transfer curve is beyond the scope and 16 are highly dependent upon
of this data sheet, but some
general comments can be made.
As was given earlier, the diode’s
video resistance is given by
It should be noted that curves
the exact design of the input
impedance matching network.
The designer will have to experi-
ment with bias current using his
specific design.
-5
8.33 x 10 nT
R = ––––––––––––
V
IS + Ib
120
INPUT POWER = –30 dBm
where T is the diode’s tempera-
ture in °K.
3.0 µA
100
80
Equation (1) would be straightfor-
ward to solve but for the fact that
diode forward voltage is a func-
tion of temperature as well as
forward current. The equation,
As can be seen, temperature has a
strong effect upon RV, and this
will in turn affect video bandwidth
and input RF impedance. A glance
at Figure 7 suggests that the
proper choice of bias current in
the HSMS-286A series can mini-
mize variation over temperature.
1.0 µA
10 µA
60
40
equation 3, for V is:
f
0.5 µA
11600 (V – If Rs)
f
-55 -35 -15
5
25 45
65 85
nT
If = IS
e
– 1
TEMPERATURE (°C)
Figure 15. Output Voltage vs.
Temperature and Bias Current in the
915 MHz Voltage Doubler using the
HSMS-286A Series.
where
The detector circuits described
earlier were tested over tempera-
ture. The 915 MHz voltage doubler
using the HSMS-286A series
produced the output voltages as
shown in Figure 15. The use of
3 µA of bias resulted in the highest
voltage sensitivity, but at the cost
of a wide variation over tempera-
ture. Dropping the bias to 1 µA
produced a detector with much
less temperature variation.
n = ideality factor
T = temperature in °K
Rs = diode series resistance
35
INPUT POWER = –30 dBm
3.0 µA
Equation ( 3) .
25
10 µA
and IS (diode saturation current)
is given by
1.0 µA
15
5
2
n
)
1
T
1
298
– 4060
e
(
–
)
0.5 µA
T
298
Is = I0
(
A similar experiment was con-
ducted with the HSMS-286A series
in the 5.8 GHz detector. Once
again, reducing the bias to some
level under 3 µA stabilized the
output of the detector over a wide
temperature range.
-55 -35 -15
5
25 45
65 85
Equation ( 4) .
TEMPERATURE (°C)
Figure 16. Output Voltage vs.
Equations (1) and (3) are solved
simultaneously to obtain the value
of junction temperature for given
values of diode case temperature,
DC power dissipation and RF
power dissipation.
Temperature and Bias Current in the
5.80 GHz Voltage Detector using the
HSMS-286A Series.
8
Diode Burnout
profile is representative of an IR
reflow type of surface mount
assembly process.
0.026
Any Schottky junction, be it an RF
diode or the gate of a MESFET, is
relatively delicate and can be
burned out with excessive RF
power. Many crystal video
receivers used in RFID (tag)
applications find themselves in
poorly controlled environments
where high power sources may be
present. Examples are the areas
around airport and FAA radars,
nearby ham radio operators, the
vicinity of a broadcast band
transmitter, etc. In such
environments, the Schottky diodes
of the receiver can be protected by
a device known as a limiter
diode.[8] Formerly available only in
radar warning receivers and other
high cost electronic warfare
applications, these diodes have
been adapted to commercial and
consumer circuits.
After ramping up from room
0.075
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evaporat-
ing solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
0.035
0.016
Figure 17. PCB Pad Layout
( dimensions in inches) .
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT-363
package, will reach solder reflow
temperatures faster than those
with a greater mass.
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of the board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
Hewlett-Packard offers a complete
line of surface mountable PIN
limiter diodes. Most notably, our
HSMP-4820 (SOT-23) can act as a
very fast (nanosecond) power-
sensitive switch when placed
between the antenna and the
Schottky diode, shorting out the
RF circuit temporarily and
reflow zone (T ) should not
MAX
exceed 235 °C.
These parameters are typical for a
surface mount assembly process
for HP SOT-363 diodes. As a
general guideline, the circuit board
and components should be exposed
only to the minimum temperatures
and times necessary to achieve a
uniform reflow of solder.
HP’s SOT-363 diodes have been
qualified to the time-temperature
profile shown in Figure 18. This
reflecting the excessive RF energy
back out the antenna.
250
200
Assembly Instructions
SOT-363 PCB Footprint
A recommended PCB pad layout
for the miniature SOT-363 (SC-70
6 lead) package is shown in
Figure 17 (dimensions are in
inches). This layout provides
ample allowance for package
placement by automated assembly
equipment without adding
parasitics that could impair the
performance.
TMAX
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0
60
120
180
240
300
TIME (seconds)
Figure 18. Surface Mount Assembly Profile.
[6]
Hewlett-Packard Application Note 956-4, Schottky Diode Voltage Doubler.
9
Package Dimensions
Outline SOT-363 ( SC-70, 6 Lead)
Pin Connections and
Package Marking
1.30 (0.051)
REF.
1
2
3
6
5
4
PACKAGE MARKING CODE
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
XX
Notes:
0.650 BSC (0.025)
1. Package marking provides
orientation and identification.
2. See “Electrical Specifications”
for appropriate package
marking.
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.20 (0.008)
0.10 (0.004)
10°
0.30 (0.012)
0.10 (0.004)
0.25 (0.010)
0.15 (0.006)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Part Number Ordering Information
No. of
Part Number
Devices
3000
100
Container
7" Reel
HSMS-285A-TR1[1]
HSMS-285A-BLK[1]
HSMS-286A-TR1[2]
HSMS-286A-BLK[2]
antistatic bag
7" Reel
3000
100
antistatic bag
Notes:
1. “A” = L or P only
2. “A” = L, P or R
10
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
8 mm
CARRIER
TAPE
##
##
##
##
USER
FEED
DIRECTION
Note: “##” represents Package Marking Code.
Package marking is right side up with carrier tape
perforations at top. Conforms to Electronic Industries
RS-481, “Taping of Surface Mounted Components for
Automated Placement.” Standard Quantity is
3,000 Devices per Reel.
COVER TAPE
Tape Dimensions and Product Orientation
For Outline SOT-363 ( SC-70, 6 Lead)
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 ± 0.30
0.315 ± 0.012
t
0.255 ± 0.013 0.010 ± 0.0005
5.4 ± 0.10 0.205 ± 0.004
0.062 ± 0.001 0.0025 ± 0.00004
1
COVER TAPE
WIDTH
C
TAPE THICKNESS
T
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 ± 0.05
0.079 ± 0.002
11
For technical assistance or the location of
your nearest Hewlett-Packard sales office,
distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1997 Hewlett-Packard Co.
Printed in U.S.A.
5966-2032E (10/97)
相关型号：
HSMS-286P-TR1G
Mixer Diode, Ultra High Frequency to C Band, Silicon, LEAD FREE, SC-70, 6 PIN
AGILENT
HSMS-286R-BLKG
Mixer Diode, Ultra High Frequency to C Band, Silicon, LEAD FREE, SC-70, 6 PIN
AGILENT
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