HWD2119 [ETC]

350mWAudio Power Amplifier with Shutdown Mode; 350mWAudio功率放大器关断模式
HWD2119
型号: HWD2119
厂家: ETC    ETC
描述:

350mWAudio Power Amplifier with Shutdown Mode
350mWAudio功率放大器关断模式

放大器 功率放大器
文件: 总21页 (文件大小:868K)
中文:  中文翻译
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Audio Power Amplifier  
HWD2119  
350mW Audio Power Amplifier with Shutdown Mode  
General Description  
Key Specifications  
n THD+N at 1kHz, 350mW continuous average output  
The HWD2119 is a mono bridged power amplifier that is ca-  
pable of delivering 350mWRMS output power into a 16load  
or 300mWRMS output power into an 8load with 10%  
THD+N from a 5V power supply.  
power into 16Ω  
n THD+N at 1kHz, 300mW continuous average output  
power into 8Ω  
10% (max)  
10% (max)  
n Shutdown Current  
0.7µA (typ)  
The HWD2119 audio power amplifier is designed specifically  
to provide high quality output power and minimize PCB  
area with surface mount packaging and a minimal amount  
of external components. Since the HWD2119 does not  
require output coupling capacitors, bootstrap capacitors or  
snubber networks, it is optimally suited for low-power por-  
table applications.  
Features  
n LLP, SOP, and MSOP surface mount packaging.  
n Switch on/off click suppression.  
n Unity-gain stable.  
n Minimum external components.  
The closed loop response of the unity-gain stable HWD2119  
can be configured using external gain-setting resistors. The  
device is available in LLP, MSOP, and SO package types to  
suit various applications.  
Applications  
n General purpose audio  
n Portable electronic devices  
n Information Appliances (IA)  
Typical Application  
FIGURE 1. Typical Audio Amplifier Application Circuit  
1
Connection Diagrams  
Small Outline (SO) Package  
SO Marking  
HWD 2119 M  
Top View  
XY - Date Code  
TT - Die Traceability  
Bottom 2 lines - Part Number  
Top View  
Order Numer HWD2119M  
Mini Small Outline (MSOP) Package  
MSOP Marking  
Top View  
Top View  
Order Number HWD2119MM  
19 -HWD2119MM  
LLP Package  
Top View  
Order Number HWD2119LD  
1
Absolute Maximum Ratings (Notes 2, 3)  
If Military/Aerospace specified devices are required,  
please contact the CSMSC Semiconductor Sales Office/  
Distributors for availability and specifications.  
Infrared (15 seconds)  
Thermal Resistance  
220˚C  
θJC (MSOP)  
θJA (MSOP)  
θJC (SOP)  
θJA (SOP)  
θJA (LLP)  
56˚C/W  
210˚C/W  
Supply Voltage  
6.0V  
−65˚C to +150˚C  
−0.3V to VDD +0.3V  
Internally Limited  
3.5kV  
35˚C/W  
Storage Temperature  
170˚C/W  
Input Voltage  
117˚C/W (Note 10)  
150˚C/W (Note 11)  
Power Dissipation (PD) (Note 4)  
ESD Susceptibility (Note 5)  
ESD Susceptibility (Note 6)  
Junction Temperature (TJ)  
Soldering Information (Note 1)  
Small Outline Package  
Vapor Phase (60 seconds)  
θJA (LLP)  
Operating Ratings (Notes 2, 3)  
250V  
150˚C  
Temperature Range  
TMIN TA TMAX  
−40˚C TA 85˚C  
2.0V VCC 5.5V  
Supply Voltage  
215˚C  
Electrical Characteristics VDD = 5V (Notes 2, 3)  
The following specifications apply for VDD = 5V, RL = 16unless otherwise stated. Limits apply for TA = 25˚C.  
HWD2119  
Units  
Symbol  
Parameter  
Conditions  
Typical  
(Note 7)  
1.5  
Limit  
(Limits)  
(Notes 8, 9)  
IDD  
Quiescent Power Supply Current  
Shutdown Current  
VIN = 0V, Io = 0A  
3.0  
5.0  
4.0  
1.0  
50  
mA (max)  
µA (max)  
V (min)  
V (max)  
mV (max)  
mW  
ISD  
VPIN1 = VDD (Note 12)  
1.0  
VSDIH  
VSDIL  
VOS  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Output Offset Voltage  
VIN = 0V  
5
THD = 10%, fIN = 1kHz  
THD = 10%, fIN = 1kHz, RL = 8Ω  
350  
300  
1
PO  
Output Power  
mW  
THD+N  
Total Harmonic Distortion + Noise  
PO = 270mWRMS, AVD = 2, fIN  
1kHz  
=
%
Electrical Characteristics VDD = 3V (Notes 2, 3)  
The following specifications apply for VDD = 3V and RL = 16load unless otherwise stated. Limits apply to TA = 25˚C.  
HWD2119  
Units  
Symbol  
Parameter  
Conditions  
Typical  
(Note 7)  
1.0  
Limit  
(Limits)  
(Notes 8, 9)  
IDD  
Quiescent Power Supply Current  
Shutdown Current  
VIN = 0V, Io = 0A  
3.0  
5.0  
2.4  
0.6  
50  
mA (max)  
µA (max)  
V (min)  
V (max)  
mV  
ISD  
VPIN1 = VDD (Note 12)  
0.7  
VSDIH  
VSDIL  
VOS  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Output Offset Voltage  
VIN = 0V  
5
110  
90  
1
THD = 10%, fIN = 1kHz  
THD = 10%, fIN = 1kHz, RL = 8Ω  
mW  
PO  
Output Power  
mW  
THD+N  
Total Harmonic Distortion + Noise  
PO = 80mWRMS, AVD = 2, fIN  
1kHz  
=
%
2
Electrical Characteristics VDD = 3V (Notes 2, 3)  
The following specifications apply for VDD = 3V and RL = 16load unless otherwise stated. Limits apply to TA  
=
25˚C. (Continued)  
Note 1: See AN-450 ’Surface Mounting and their Effects on Product Reliability’ for other methods of soldering surface mount devices.  
Note 2: All voltages are measured with respect to the ground pin, unless otherwise specified.  
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which  
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit  
is given. However, the typical value is a good indication of device’s performance.  
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by T  
, θ , and the ambient temperature T . The maximum  
A
JMAX JA  
allowable power dissipation is P  
= (T  
–T )/θ . For the HWD2119, T  
= 150˚C and the typical junction-to-ambient thermal resistance (θ ) when board  
JMAX JA  
DMAX  
JMAX  
A
JA  
mounted is 210˚C/W for the MSOP package and 170˚C/W for the SOP package.  
Note 5: Human body model, 100pF discharged through a 1.5 kresistor.  
Note 6: Machine Model, 220pF–240pF capacitor is discharged through all pins.  
Note 7: Typical specifications are specified at 25˚C and represent the parametric norm.  
Note 8: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).  
Note 9: Datasheet min/max specification limits are guaranteed by designs, test, or statistical analysis.  
Note 10: The given θ is for an HWD2119 package in an LDA08B with the Exposed-DAP soldered to a printed circuit board copper pad with an area equivalent to  
JA  
that of the Exposed-DAP itself. The Exposed-DAP of the LDA08B package should be electrically connected to GND or an electrically isolated copper area.  
Note 11: The given θ is for an HWD2119 package in an LDA08B with the Exposed-DAP not soldered to any printed circuit board copper.  
JA  
Note 12: The shutdown pin (pin1) should be driven as close as possible to V  
for minimum current in Shutdown Mode.  
DD  
External Components Description (Figure 1)  
Components  
Functional Description  
1.  
Ri  
Combined with Rf, this inverting input resistor sets the closed-loop gain. Ri also forms a high pass filter with  
Ci at fc = 1/(2πRiCi).  
2.  
Ci  
This input coupling capacitor blocks DC voltage at the amplifier’s terminals. Combined with Ri, it creates a  
high pass filter with Ri at fc = 1/(2πRiCi). Refer to the section, Proper Selection of External Components  
for an explanation of how to determine the value of Ci.  
3.  
4.  
Rf  
Combined with Ri, this is the feedback resistor that sets the closed-loop gain: Av = 2(RF/Ri).  
CS  
This is the power supply bypass capacitor that filters the voltage applied to the power supply pin. Refer to  
the Application Information section for proper placement and selection of Cs.  
5.  
CB  
This is the bypass pin capacitor that filters the voltage at the BYPASS pin. Refer to the section, Proper  
Selection of External Components, for information concerning proper placement and selection of CB.  
Typical Performance Characteristics  
THD+N vs Frequency  
THD+N vs Frequency  
3
Typical Performance Characteristics (Continued)  
THD+N vs Frequency  
THD+N vs Frequency  
THD+N vs Frequency  
THD+N vs Output Power  
THD+N vs Frequency  
THD+N vs Output Power  
4
Typical Performance Characteristics (Continued)  
THD+N vs Output Power  
THD+N vs Output Power  
THD+N vs Output Power  
THD+N vs Output Power  
Output Power vs Supply Voltage  
Output Power vs Supply Voltage  
RL = 8Ω  
RL = 16Ω  
5
Typical Performance Characteristics (Continued)  
Output Power vs Supply Voltage  
Output Power vs Load Resistance  
RL = 32Ω  
Power Dissipation vs  
Output Power  
VDD = 5V  
Power Dissipation vs  
Output Power  
VDD = 3V  
Power Derating Curves  
Frequency Response vs  
Input Capacitor Size  
6
Typical Performance Characteristics (Continued)  
Supply Current vs  
Supply Voltage  
8
For the micro MUA08A package, θJA = 210˚C/W, for the  
M08A package, θJA = 170˚C/W , and TJMAX = 150˚C for the  
HWD2119. For a given ambient temperature,AT, Equation (4)  
can be used to find the maximum internal power dissipation  
supported by the IC packaging. If the result of Equation (3) is  
greater than the result of Equation (4), then decrease the  
supply voltage, increase the load impedance, or reduce the  
ambient temperature. For a typical application using the  
M08A packaged HWD2119 with a 5V power supply and an 8Ω  
load, the maximum ambient temperature that does not vio-  
late the maximum junction temperature is approximately  
42˚C. If a MUA08A packaged part is used instead with the  
same supply voltage and load, the maximum ambient tem-  
perature is 17˚C. In both cases, it is assumed that a device  
is a surface mount part operating around the maximum  
power dissipation point. The assumption that the device is  
operating around the maximum power dissipation point is  
incorrect for an 8load. The maximum power dissipation  
point occurs when the output power is equal to the maximum  
power dissipation or 50% efficiency. The HWD2119 is not  
capable of the output power level (633mW) required to op-  
erate at the maximum power dissipation point for an 8load.  
To find the maximum power dissipation, the graph Power  
Dissipation vs. Output Power must be used. From the  
graph, the maximum power dissipation for an 8load and a  
5V supply is approximately 575mW. Substituting this value  
back into equation (4) for PDMAX and using θJA = 210˚C/W  
for the MUA08A package, the maximum ambient tempera-  
ture is calculated to be 29˚C. Using θJA = 170˚C/W for the  
M08A package, the maximum ambient temperature is 52˚C.  
Refer to the Typical Performance Characteristics curves  
for power dissipation information for lower output powers  
and maximum power dissipation for each package at a given  
ambient temperature.  
Application Information  
BRIDGE CONFIGURATION EXPLANATION  
As shown in Figure 1, the HWD2119 consist of two operational  
amplifiers. External resistors, Ri and RF set the closed-loop  
gain of the first amplifier (and the amplifier overall), whereas  
two internal 20kresistors set the second amplifier’s gain at  
-1. The HWD2119 is typically used to drive a speaker con-  
nected between the two amplifier outputs.  
Figure 1 shows that the output of Amp1 servers as the input  
to Amp2, which results in both amplifiers producing signals  
identical in magnitude but 180˚ out of phase. Taking advan-  
tage of this phase difference, a load is placed between V01  
and V02 and driven differentially (commonly referred to as  
’bridge mode’). This results in a differential gain of  
A
VD= 2 *(Rf/Ri)  
(1)  
Bridge mode is different from single-ended amplifiers that  
drive loads connected between a single amplifier’s output  
and ground. For a given supply voltage, bridge mode has a  
distinct advantage over the single-ended configuration: its  
differential output doubles the voltage swing across the load.  
This results in four times the output power when compared  
to a single-ended amplifier under the same conditions. This  
increase in attainable output assumes that the amplifier is  
not current limited or the output signal is not clipped. To  
ensure minimum output signal clipping when choosing an  
amplifier’s closed-loop gain, refer to the Audio Power Am-  
plifier Design Example section.  
Another advantage of the differential bridge output is no net  
DC voltage across the load. This results from biasing V01  
and V02 at half-supply. This eliminates the coupling capacitor  
that single supply, single-ended amplifiers require. Eliminat-  
ing an output coupling capacitor in a single-ended configu-  
ration forces a single supply amplifier’s half-supply bias volt-  
age across the load. The current flow created by the half-  
supply bias voltage increases internal IC power dissipation  
and may permanently damage loads such as speakers.  
POWER SUPPLY BYPASSING  
As with any power amplifier, proper supply bypassing is  
critical for low noise performance and high power supply  
rejection. The capacitors connected to the bypass and power  
supply pins should be placed as close to the HWD2119 as  
possible. The capacitor connected between the bypass pin  
and ground improves the internal bias voltage’s stability,  
producing improved PSRR. The improvements to PSRR  
increase as the bypass pin capacitor value increases. Typi-  
cal applications employ a 5V regulator with 10µF and 0.1µF  
filter capacitors that aid in supply stability. Their presence,  
however, does not eliminate the need for bypassing the  
supply nodes of the HWD2119. The selection of bypass ca-  
pacitor values, especially CB , depends on desired PSRR  
requirements, click and pop performance as explained in the  
section, Proper Selection of External Components, as  
well as system cost and size constraints.  
POWER DISSIPATION  
Power dissipation is a major concern when designing a  
successful bridged or single-ended amplifier. Equation (2)  
states the maximum power dissipation point for a single-  
ended amplifier operating at a given supply voltage and  
driving a specified load.  
2
PDMAX = (VDD  
)
/(2π2RL ) (W) Single-ended  
(2)  
However, a direct consequence of the increased power de-  
livered to the load by a bridged amplifier is an increase in the  
internal power dissipation point for a bridge amplifier oper-  
ating at the same given conditions. Equation (3) states the  
maximum power dissipation point for a bridged amplifier  
operating at a given supply voltage and driving a specified  
load.  
SHUTDOWN FUNCTION  
PDMAX = 4(VDD)2/(2π2 RL ) (W) Bridge Mode  
(3)  
The voltage applied to the HWD2119’s SHUTDOWN pin con-  
trols the shutdown function. Activate micro-power shutdown  
by applying VDD to the SHUTDOWN pin. When active, the  
HWD2119’s micro-power shutdown feature turns off the ampli-  
fier’s bias circuitry, reducing the supply current. The logic  
threshold is typically 1/2VDD. The low 0.7µA typical shut-  
down current is achieved by applying a voltage that is as  
near as VDD as possible to the SHUTDOWN pin. A voltage  
that is less than VDD may increase the shutdown current.  
Avoid intermittent or unexpected micro-power shutdown by  
ensuring that the SHUTDOWN pin is not left floating but  
connected to either VDD or GND.  
The HWD2119 has two operational amplifiers in one package  
and the maximum internal power dissipation is four times  
that of a single-ended amplifier. However, even with this  
substantial increase in power dissipation, the HWD2119 does  
not require heatsinking. From Equation (3), assuming a 5V  
power supply and an 8load, the maximum power dissipa-  
tion point is 633mW. The maximum power dissipation point  
obtained from Equation (3) must not exceed the power dis-  
sipation predicted by Equation (4):  
PDMAX = (TJMAX - TA)/θJA (W)  
(4)  
9
f-3dB = 1/(2 πRiCi) (Hz)  
(5)  
Application Information (Continued)  
As an example when using a speaker with a low frequency  
limit of 150Hz, Ci, using Equation (5) is 0.063µF. The 0.39µF  
Ci shown in Figure 1 allows the HWD2119 to drive a high  
efficiency, full range speaker whose response extends down  
to 20Hz.  
There are a few ways to activate micro-power shutdown.  
These included using a single-pole, single-throw switch, a  
microcontroller, or a microprocessor. When using a switch,  
connect an external 10kto 100kpull-up resistor between  
the SHUTDOWN pin and VDD. Connect the switch between  
the SHUTDOWN pin and ground. Select normal amplifier  
operation by closing the switch. Opening the switch con-  
nects the shutdown pin to VDD through the pull-up resistor,  
activating micro-power shutdown. The switch and resistor  
guarantee that the SHUTDOWN pin will not float. This pre-  
vents unwanted state changes. In a system with a micropro-  
cessor or a microcontroller, use a digital output to apply the  
control voltage to the SHUTDOWN pin. Driving the SHUT-  
DOWN pin with active circuitry eliminates the pull-up resistor  
Besides optimizing the input capacitor value, the bypass  
capacitor value, CB requires careful consideration. The by-  
pass capacitor’s value is the most critical to minimizing  
turn-on pops because it determines how fast the HWD2119  
turns on. The slower the HWD2119’s outputs ramp to their  
quiescent DC voltage (nominally 1/2VDD), the smaller the  
turn-on pop. While the device will function properly (no os-  
cillations or motorboating), with CB less than 1.0µF, the  
device will be much more susceptible to turn-on clicks and  
pops. Thus, a value of CB equal to or greater than 1.0µF is  
recommended in all but the most cost sensitive designs.  
PROPER SELECTION OF EXTERNAL COMPONENTS  
Optimizing the HWD2119’s performance requires properly se-  
lecting external components. Though the HWD2119 operates  
well when using external components with wide tolerances,  
best performance is achieved by optimizing component val-  
ues.  
Bypass Capacitor Value Selection  
Besides minimizing the input capacitor size, careful consid-  
eration should be paid to the value of CB, the capacitor  
connected to the BYPASS pin. Since CB determines how  
fast the HWD2119 settles to quiescent operation, its value is  
critical when minimizing turn-on pops. The slower the  
HWD2119’s outputs ramp to their quiescent DC voltage (nomi-  
nally 1/2VDD), the smaller the turn-on pop. Choosing CB  
equal to 1.0µF along with a small value of Ci (in the range of  
0.1µF to 0.39µF) produces a click-less and pop-less shut-  
down function. As discussed above, choosing Ci no larger  
than necessary for the desired bandwidth helps minimize  
clicks and pops.  
The HWD2119 is unity gain stable, giving the designer maxi-  
mum design flexibility. The gain should be set to no more  
than a given application requires. This allows the amplifier to  
achieve minimum THD+N and maximum signal-to-noise ra-  
tio. These parameters are compromised as the closed-loop  
gain increases. However, low gain demands input signals  
with greater voltage swings to achieve maximum output  
power. Fortunately, many signal sources such as audio CO-  
DECs have outputs of 1VRMS (2.83VP-P). Please refer to the  
Audio Power Amplifier Design section for more informa-  
tion on selecting the proper gain.  
Optimizing Click and Pop Reduction Performance  
The HWD2119 contains circuitry that minimizes turn-on and  
shutdown transients or ’clicks and pops’. For this discussion,  
turn on refers to either applying the power or supply voltage  
or when the shutdown mode is deactivated. While the power  
supply is ramping to it’s final value, the HWD2119’s internal  
amplifiers are configured as unity gain buffers. An internal  
current source charges the voltage of the bypass capacitor,  
CB, connected to the BYPASS pin in a controlled, linear  
manner. Ideally, the input and outputs track the voltage  
charging on the bypass capacitor. The gain of the internal  
amplifiers remains unity until the bypass capacitor is fully  
charged to 1/2VDD. As soon as the voltage on the bypass  
capacitor is stable, the device becomes fully operational.  
Although the BYPASS pin current cannot be modified,  
changing the size of the bypass capacitor, CB, alters the  
device’s turn-on time and magnitude of ’clicks and pops’.  
Increasing the value of CB reduces the magnitude of turn-on  
pops. However, this presents a tradeoff: as the size of CB  
increases, the turn-on time (Ton) increases. There is a linear  
relationship between the size of CB and the turn on time.  
Below are some typical turn-on times for various values of  
CB:  
Another important consideration is the amplifier’s close-loop  
bandwidth. To a large extent, the bandwidth is dictated by  
the choice of external components shown in Figure 1. The  
input coupling capacitor, Ci, forms a first order high pass filter  
that limits low frequency response. This value should be  
chosen based on needed frequency response for a few  
distinct reasons discussed below  
Input Capacitor Value Selection  
Amplifying the lowest audio frequencies requires a high  
value input coupling capacitor (Ci in Figure 1). A high value  
capacitor can be expensive and may compromise space  
efficiency in portable designs. In many cases the speakers  
used in portable systems, whether internal or external, have  
little ability to reproduce signals below 150Hz. Applications  
using speakers with limited frequency response reap little  
improvement by using a large input capacitor.  
Besides affecting system cost and size, Ci has an effect on  
the HWD2119’s click and pop performance. When the supply  
voltage is first applied, a transient (pop) is created as the  
charge on the input capacitor changes from zero to a quies-  
cent state. The magnitude of the pop is directly proportional  
to the input capacitor’s value. Higher value capacitors need  
CB  
TON  
20ms  
0.01µF  
0.1µF  
0.22µF  
0.47µF  
1.0µF  
more time to reach a quiescent DC voltage (usually 1/2 VDD  
)
when charged with a fixed current. The amplifier’s output  
charges the input capacitor through the feedback resistor,  
RF. Thus, selecting an input capacitor value that is no higher  
than necessary to meet the desired -3dB frequency can  
minimize pops.  
200ms  
440ms  
940ms  
2S  
As shown in Figure 1, the input resistor (Ri) and the input  
capacitor, Ci produce a -3dB high pass filter cutoff frequency  
that is found using Equation (5).  
10  
The last step in this design example is setting the amplifier’s  
Application Information (Continued)  
±
-3dB frequency bandwidth. To achieve the desired 0.25dB  
In order to eliminate ’clicks and pops’, all capacitors must be  
discharged before turn-on. Rapidly switching VDD may not  
allow the capacitors to fully discharge, which may cause  
’clicks and pops’.  
pass band magnitude variation limit, the low frequency re-  
sponse must extend to at least one-fifth the lower bandwidth  
limit and the high frequency response must extend to at least  
five times the upper bandwidth limit. The gain variation for  
±
both response limits is 0.17dB, well with in the 0.25dB  
desired limit.  
AUDIO POWER AMPLIFIER DESIGN EXAMPLE  
The results are:  
The following are the desired operational  
parameters:  
fL = 100Hz/5 = 20Hz  
fH = 20 kHz*5 = 100kHz  
Given:  
As mentioned in the External Components section, Ri and  
Ci create a high pass filter that sets the amplifier’s lower  
band pass frequency limit. Find the coupling capacitor’s  
value using Equation (8).  
Power Output  
Load Impedance  
Input Level  
100mW  
16Ω  
1Vrms (max)  
20kΩ  
Input Impedance  
Bandwidth  
Ci 1/(2πRifc) (F)  
(8)  
±
100Hz–20kHz 0.25dB  
Ci 0.398µF, a standard value of 0.39µF will be used. The  
product of the desired high frequency cutoff (100kHz in this  
example) and the differential gain, AVD, determines the up-  
The design begins by specifying the minimum supply voltage  
necessary to obtain the specified output power. To find this  
minimum supply voltage, use the Output Power vs. Supply  
Voltage graph in the Typical Performance Characteristics  
section. From the graph for a 16load, (graphs are for 8,  
16, and 32loads) the supply voltage for 100mW of output  
power with 1% THD+N is approximately 3.15 volts.  
per pass band response limit. With AVD = 1.27 and fH  
=
100kHz, the closed-loop gain bandwidth product (GBWP) is  
127kHz. This is less than the HWD2119’s 900kHz GBWP. With  
this margin the amplifier can be used in designs that require  
more differential gain while avoiding performance restricting  
bandwidth limitations.  
Additional supply voltage creates the benefit of increased  
headroom that allows the HWD2119 to reproduce peaks in  
excess of 100mW without output signal clipping or audible  
distortion. The choice of supply voltage must also not create  
a situation that violates maximum dissipation as explained  
above in the Power Dissipation section. For example, if a  
3.3V supply is chosen for extra headroom then according to  
Equation (3) the maximum power dissipation point with a  
16load is 138mW. Using Equation (4) the maximum am-  
bient temperature is 121˚C for the MUA08A package and  
126˚C for the M08A package.  
After satisfying the HWD2119’s power dissipation require-  
ments, the minimum differential gain is found using Equation  
(6).  
(6)  
Thus a minimum gain of 1.27 V/V allows the HWD2119 to  
reach full output swing and maintain low noise and THD+N  
performance. For this example, let AVD = 1.27. The amplifi-  
er’s overall gain is set using the input (Ri) and feedback (RF)  
resistors. With the desired input impedance set to 20k, the  
feedback resistor is found using Equation (7).  
RF/Ri = AVD/2 (V/V)  
The value of RF is 13k.  
(7)  
11  
Application Information (Continued)  
HIGHER GAIN AUDIO AMPLIFIER  
Figure 2  
The HWD2119 is unity-gain stable and requires no external  
components besides gain-setting resistors, an input coupling  
capacitor, and proper supply bypassing in the typical appli-  
cation. However, if a closed-loop differential gain of greater  
than 10 is required, a feedback capacitor (C4) may be  
needed as shown in Figure 2 to bandwidth limit the amplifier.  
This feedback capacitor creates a low pass filter that elimi-  
nates possible high frequency oscillations. Care should be  
taken when calculating the -3dB frequency in that an incor-  
rect combination of R3 and C4 will cause rolloff before  
20kHz. A typical combination of feedback resistor and ca-  
pacitor that will not produce audio band high frequency rolloff  
is R3 = 20kand C4 = 25pF. These components result in a  
-3dB point of approximately 320 kHz. It is not recommended  
that the feedback resistor and capacitor be used to imple-  
ment a band limiting filter below 100kHz.  
12  
Application Information (Continued)  
DIFFERENTIAL AMPLIFIER CONFIGURATION FOR HWD2119  
Figure 3  
13  
Application Information (Continued)  
REFERENCE DESIGN BOARD and PCB LAYOUT GUIDELINES  
Figure 4  
14  
Application Information (Continued)  
HWD2119 SO DEMO BOARD ARTWORK  
Silk Screen  
Top Layer  
Bottom Layer  
15  
Application Information (Continued)  
HWD2119 LD DEMO BOARD ARTWORK  
Silk Screen  
Composite View  
Bottom Layer  
Top Layer  
16  
Application Information (Continued)  
Mono HWD2119 Reference Design Boards  
Bill of Material for all Demo Boards  
Item  
Part Number  
Part Description  
Qty  
Ref Designator  
1
551011208-001 HWD2119 Mono Reference Design Board  
1
10  
20  
21  
25  
30  
35  
482911183-001  
151911207-001  
151911207-002  
152911207-001  
472911207-001  
210007039-002  
HWD2119 Audio AMP  
Tant Cap 1uF 16V 10  
1
U1  
C1  
1
1
1
3
2
Cer Cap 0.39uF 50V Z5U 20% 1210  
Tant Cap 1uF 16V 10  
C2  
C3  
Res 20K Ohm 1/10W 5  
R1, R2, R3  
J1, J2  
Jumper Header Vertical Mount 2X1  
0.100  
PCB LAYOUT GUIDELINES  
Single-Point Power / Ground Connections  
This section provides practical guidelines for mixed signal  
PCB layout that involves various digital/analog power and  
ground traces. Designers should note that these are only  
’rule-of-thumb’ recommendations and the actual results will  
depend heavily on the final layout.  
The analog power traces should be connected to the digital  
traces through a single point (link). A ’Pi-filter’ can be helpful  
in minimizing high frequency noise coupling between the  
analog and digital sections. It is further recommended to put  
digital and analog power traces over the corresponding digi-  
tal and analog ground traces to minimize noise coupling.  
General Mixed Signal Layout Recommendation  
Placement of Digital and Analog Components  
Power and Ground Circuits  
All digital components and high-speed digital signals traces  
should be located as far away as possible from analog  
components and circuit traces.  
For two layer mixed signal design, it is important to isolate  
the digital power and ground trace paths from the analog  
power and ground trace paths. Star trace routing techniques  
(bringing individual traces back to a central point rather than  
daisy chaining traces together in a serial manner) can have  
a major impact on low level signal performance. Star trace  
routing refers to using individual traces to feed power and  
ground to each circuit or even device. This technique will  
take require a greater amount of design time but will not  
increase the final price of the board. The only extra parts  
required will be some jumpers.  
Avoiding Typical Design / Layout Problems  
Avoid ground loops or running digital and analog traces  
parallel to each other (side-by-side) on the same PCB layer.  
When traces must cross over each other do it at 90 degrees.  
Running digital and analog traces at 90 degrees to each  
other from the top to the bottom side as much as possible will  
minimize capacitive noise coupling and cross talk.  
17  
Physical Dimensions inches (millimeters) unless otherwise noted  
MSOP  
Order Number HWD2119MM  
18  
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)  
SO  
Order Number HWD2119M  
19  
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)  
LLP  
Order Number HWD2119LD  
20  
Chengdu Sino Microelectronics System Co.,Ltd  
(Http://www.csmsc.com)  
Headquarters of CSMSC:  
Beijing Office:  
Address: 2nd floor, Building D,  
Science & Technology  
Industrial Park, 11 Gaopeng  
Avenue, Chengdu High-Tech  
Zone,Chengdu City, Sichuan  
Province, P.R.China  
Address: Room 505, No. 6 Building,  
Zijin Garden, 68 Wanquanhe  
Rd., Haidian District,  
Beijing, P.R.China  
PC: 100000  
Tel: +86-10-8265-8662  
Fax: +86-10-8265-86  
PC: 610041  
Tel: +86-28-8517-7737  
Fax: +86-28-8517-5097  
Shenzhen Office:  
Address: Room 1015, Building B,  
Zhongshen Garden,  
Caitian Rd, Futian District,  
Shenzhen, P.R.China  
PC: 518000  
Tel : +86-775-8299-5149  
+86-775-8299-5147  
+86-775-8299-6144  
Fax: +86-775-8299-6142  

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