HY1707I [ETC]

N-Channel Enhancement Mode MOSFET;
HY1707I
型号: HY1707I
厂家: ETC    ETC
描述:

N-Channel Enhancement Mode MOSFET

文件: 总16页 (文件大小:1156K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HY1707P/M/B/I/MF/PS/PM  
N-Channel Enhancement Mode MOSFET  
Pin Description  
Features  
·
70V/80A,  
RDS(ON)= 6mW (typ.) @ VGS=10V  
AvalancheRated  
S
D
·
·
·
S
D
G
G
S
D
Reliable and Rugged  
S
D
G
G
TO-263-2L  
TO-262-3L  
TO-220FB-3S  
Lead Free andGreenDevicesAvailable  
(RoHS Compliant)  
TO-220FB-3L  
S
D
G
S
D
S
D
G
G
Applications  
TO-3PS-3L  
TO-3PS-3M  
TO-220MF-3L  
D
·
Power Management for Inverter Systems.  
G
N-ChannelMOSFET  
S
Ordering and Marking Information  
Package Code  
P
M
B
I
P : TO-220FB-3L  
B: TO-263-2L  
M : TO-220FB-3S  
I : TO-262-3L  
HY1707  
HY1707 HY1707  
HY1707  
ÿ
ÿ
ÿ
YYXXXJWW G  
ÿ
YYXXXJWW G YYXXXJWW G  
YYXXXJWW G  
MF: TO-220MF-3L PS: TO-3PS-3L  
PM: TO-3PS-3M  
MF  
PS  
PM  
Assembly Material  
Date Code  
HY1707 HY1707 HY1707  
ÿ
ÿ
ÿ
YYXXXJWW G YYXXXJWW G YYXXXJWW G  
G : Lead Free Device  
YYXXX WW  
Note:  
termination finish; which are fully compliant with RoHS.  
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.  
lead-free products contain molding compounds/die attach materials and 100% matte tin plate  
HOOYI  
lead-free products meet or exceed the lead-free  
HOOYI  
HOOYI  
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in  
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).  
reserves the right to make changes to improve reliability or manufacturability without notice, and  
advise customers to obtain the latest version of relevant information to verify before placing orders.  
HOOYI  
www.hooyi.cc  
151015  
1
HY1707P/M/B/I/MF/PS/PM  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
70  
±25  
V
Gate-Source Voltage  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
175  
°C  
°C  
A
TSTG  
IS  
-55 to 175  
80  
TC=25°C  
Mounted on Large Heat Sink  
IDM  
TC=25°C  
TC=25°C  
TC=100°C  
TC=25°C  
TC=100°C  
320**  
80  
A
A
Pulsed Drain Current *  
ID  
Continuous Drain Current  
65  
178  
90  
PD  
Maximum Power Dissipation  
W
Thermal Resistance-Junction to Case  
Thermal Resistance-Junction to Ambient  
Drain-Source Avalanche Energy  
0.84  
62.5  
650***  
°C/W  
°C/W  
mJ  
RqJC  
RqJA  
EAS  
L=0.3mH  
Note  
*
Repetitive rating ; pulse width limiited by junction temperature  
** Drain current is limited by junction temperature  
*** VD=55V  
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)  
HY1707  
Symbol  
Parameter  
Test Conditions  
Unit  
Min. Typ. Max.  
Static Characteristics  
BVDSS Drain-Source Breakdown Voltage  
70  
-
74  
-
-
1
V
VGS=0V, IDS=250mA  
V, V  
VDS=70  
GS=0V  
TJ=85°C  
IDSS Zero Gate Voltage Drain Current  
mA  
-
-
10  
4
VGS(th) Gate Threshold Voltage  
IGSS Gate Leakage Current  
2
-
3
-
V
VDS=VGS, IDS=250mA  
VGS=±25V, VDS=0V  
VGS=10V, IDS=40A  
±100  
7
nA  
*
RDS(ON) Drain-Source On-state Resistance  
-
6
mW  
Diode Characteristics  
*
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
ISD=40A, VGS=0V  
-
-
-
0.8  
55  
1
-
V
ns  
nC  
IDS=40A, dlSD/dt=100A/ms  
Qrr  
100  
-
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2
HY1707P/M/B/I/MF/PS/PM  
Electrical Characteristics (Cont.) (TC = 25°C Unless Otherwise Noted)  
HY1707  
Symbol  
Parameter  
Test Conditions  
Unit  
Min. Typ. Max.  
Dynamic Characteristics  
RG  
Ciss  
Coss  
Crss  
Gate Resistance  
VGS=0V,VDS=0V,F=1MHz  
-
-
-
-
-
-
-
-
0.9  
4550  
900  
280  
21  
-
-
W
Input Capacitance  
VGS=0V,  
VDS=25V,  
Frequency=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
-
-
td(ON) Turn-on Delay Time  
Tr Turn-on Rise Time  
td(OFF) Turn-off Delay Time  
Tf Turn-off Fall Time  
Gate Charge Characteristics  
39  
19  
48  
57  
VDD=35V, RG=3 W,  
10  
IDS=40A, V =10V,  
ns  
GS  
25  
31  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
-
-
-
88  
20  
21  
-
-
-
VDS=55V, VGS=10V,  
IDS=40A  
nC  
Note * : Pulse test ; pulse width £300ms, duty cycle£2%.  
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3
HY1707P/M/B/I/MF/PS/PM  
Typical Operating Characteristics  
Power Dissipation  
Drain Current  
100  
80  
60  
40  
20  
240  
200  
limited by package  
160  
120  
80  
40  
TC=25oC  
0
TC=25oC,VG=10V  
0
20 40 60 80 100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200  
Tc -  
Temperature (°C)  
Tc-Case Temperature (°C)  
Case  
Safe Operation Area  
400  
100  
100us  
1ms  
Rds(on) Limit  
10  
1
10ms  
DC  
TC=25oC  
0.1  
0.1  
1
10  
100  
VDS - Drain - Source Voltage (V)  
Thermal Transient Impedance  
10  
1
Duty = 0.5  
0.2  
0.1  
0.05  
0.1  
0.02  
0.01  
0.01  
Single  
Mounted on minimum pad  
o
RqJA :62.5 C/W  
0.001  
0.1  
0.0001  
0.001  
0.01  
1
10  
Square Wave Pulse Duration (sec)  
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4
HY1707P/M/B/I/MF/PS/PM  
Typical Operating Characteristics (Cont.)  
Output Characteristics  
Drain-Source On Resistance  
160  
140  
120  
100  
80  
8.5  
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
VGS= 7,8,9,10V  
6V  
5.5V  
5V  
VGS=10V  
60  
40  
20  
4.5V  
4V  
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
VDS - Drain-Source Voltage (V)  
ID -Drain Current (A)  
Drain-Source On Resistance  
Gate Threshold Voltage  
11  
10  
9
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IDS=40A  
IDS =250mA  
8
7
6
5
4
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150 175  
VGS - Gate - Source Voltage (V)  
Tj - Junction Temperature (°C)  
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5
HY1707P/M/B/I/MF/PS/PM  
Typical Operating Characteristics (Cont.)  
Drain-Source On Resistance  
Source-Drain Diode Forward  
160  
100  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
VGS = 10V  
IDS = 40A  
Tj=175oC  
10  
1
Tj=25oC  
RON@T=25oC: 6mW  
j
0.1  
0.0  
-50 -25  
0
25 50 75 100 125 150 175  
0.3  
0.6  
0.9  
1.2  
1.5  
Tj - Junction Temperature (°C)  
VSD - Source-Drain Voltage (V)  
Capacitance  
Gate Charge  
10  
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
VDS= 55V  
IDS= 40A  
Frequency=1MHz  
9
8
7
6
5
4
3
2
1
0
Ciss  
Coss  
Crss  
0
0
12 24 36 48 60 72 84 96  
0
5
10 15 20 25 30 35 40  
VDS - Drain - Source Voltage (V)  
QG -Gate Charge (nC)  
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6
HY1707P/M/B/I/MF/PS/PM  
Avalanche Test Circuit and Waveforms  
VDS  
L
VDSX(SUS)  
tp  
DUT  
VDS  
IAS  
RG  
VDD  
VDD  
IL  
tp  
EAS  
0.01W  
tAV  
Switching Time Test Circuit and Waveforms  
VDS  
RD  
VDS  
90%  
DUT  
VGS  
RG  
VDD  
10%  
VGS  
tp  
td(on) tr  
td(off) tf  
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7
HY1707P/M/B/I/MF/PS/PM  
Package Information  
TO-220FB-3L  
SYMBOL MIN  
NOM  
MAX  
MIN  
NOM  
MAX  
4.40  
1.27  
2.35  
0.77  
1.17  
0.48  
4.57 4.70 0.173 0.180 0.185  
1.30 1.33 0.050 0.051 0.052  
2.40 2.50 0.093 0.094 0.098  
0.80 0.90 0.030 0.031 0.035  
1.27 1.36 0.046 0.050 0.054  
0.50 0.56 0.019 0.020 0.022  
A
A1  
A2  
b
b2  
c
15.40 15.60 15.80 0.606 0.614 0.622  
D
9.00  
0.05  
9.80  
-
9.10 9.20 0.354 0.358 0.362  
0.10 0.20 0.002 0.004 0.008  
10.00 10.20 0.386 0.394 0.402  
D1  
DEP  
E
E1  
E2  
8.70  
-
-
0.343  
-
9.80  
10.00 10.20 0.386 0.394 0.402  
2.54 BSC  
5.08 BSC  
6.50 6.60  
0.100 BSC  
0.200 BSC  
e
e1  
H1  
L
6.40  
0.252 0.256 0.260  
12.75 13.50 13.65 0.502 0.531 0.537  
-
3.10 3.30  
2.50 REF  
-
0.122 0.130  
0.098 REF  
L1  
L2  
P
3.50  
3.50  
2.73  
5°  
3.60 3.63  
3.60 3.63  
2.80 2.87  
0.138 0.142 0.143  
0.138 0.142 0.143  
0.107 0.110 0.113  
P1  
Q
7°  
3°  
3°  
9°  
5°  
5°  
5°  
1°  
1°  
7°  
3°  
3°  
9°  
5°  
5°  
θ1  
θ2  
θ3  
1°  
1°  
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8
HY1707P/M/B/I/MF/PS/PM  
TO-220FB-3S  
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9
HY1707P/M/B/I/MF/PS/PM  
TO-263-2L  
MM  
NOM  
4.57  
INCH  
NOM  
0.180  
0.050  
0.106  
0.004  
0.032  
0.050  
0.015  
0.343  
0.400  
0.398  
SYMBOL  
MIN  
4.40  
1.22  
2.59  
0.00  
0.77  
1.20  
0.34  
8.60  
10.00  
10.00  
MAX  
4.70  
1.32  
2.79  
0.20  
0.90  
1.36  
0.47  
8.80  
10.26  
10.20  
MIN  
0.173  
0.048  
0.102  
0.000  
0.030  
0.047  
0.013  
0.339  
0.394  
0.394  
MAX  
0.185  
0.052  
0.110  
0.008  
0.035  
0.054  
0.019  
0.346  
0.404  
0.402  
A
A1  
A2  
A3  
b
1.27  
2.69  
0.10  
0.813  
1.270  
0.381  
8.70  
b1  
c
D1  
E
10.16  
10.10  
E2  
e
2.5 BSC  
0.100 BSC  
4
H
14.70  
1.17  
2.00  
1.45  
15.10  
1.27  
2.30  
1.55  
15.50  
1.40  
2.60  
1.70  
0.579  
0.046  
0.079  
0.057  
0.594  
0.050  
0.091  
0.061  
0.610  
0.055  
0.102  
0.067  
H2  
L
L1  
L2  
L4  
2.50 REF  
0.25 BSC  
0.098 REF  
0.010 BSC  
0°  
5°  
5°  
8°  
9°  
0°  
5°  
5°  
7°  
8°  
1
2
7°  
3°  
9°  
5°  
1°  
5°  
1°  
3°  
ΦP1  
DEP  
1.40  
0.05  
1.50  
0.10  
1.60  
0.20  
0.055  
0.002  
0.059  
0.004  
0.063  
0.008  
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10  
HY1707P/M/B/I/MF/PS/PM  
TO-262-3L  
MM  
NOM  
4.57  
INCH  
NOM  
0.180  
0.050  
0.105  
0.032  
0.050  
0.015  
0.930  
0.343  
0.400  
SYMBOL  
MIN  
4.45  
1.22  
2.29  
0.71  
1.22  
0.38  
23.20  
8.38  
10.03  
MAX  
4.70  
1.32  
2.92  
0.97  
1.40  
0.76  
24.02  
8.89  
10.54  
MIN  
0.175  
0.048  
0.090  
0.028  
0.048  
0.015  
0.913  
0.330  
0.395  
MAX  
0.185  
0.052  
0.115  
0.038  
0.055  
0.030  
0.946  
0.350  
0.415  
A
A1  
A2  
b
1.27  
2.67  
0.813  
1.270  
0.381  
23.61  
8.70  
b2  
c
D
D1  
E1  
e
10.16  
2.54 BSC  
0.100 BSC  
H2  
L
-
-
1.31  
14.10  
4.06  
-
-
0.052  
0.555  
0.160  
13.34  
3.30  
13.73  
3.56  
0.525  
0.130  
0.541  
0.140  
L1  
L2  
L3  
P1  
θ1  
θ2  
θ3  
θ4  
DEP  
10.77 REF  
3.40 REF  
0.424 REF  
0.134 REF  
0.047 0.052  
1.07  
1.20  
1.32  
-
0.042  
-
7°  
3°  
-
-
7°  
-
-
-
-
-
3°  
-
-
12°  
3°  
-
-
-
-
12°  
3°  
-
0.10  
0.18  
0.25  
0.004  
0.007  
0.010  
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11  
HY1707P/M/B/I/MF/PS/PM  
TO-220MF-3L  
MM  
SYMBOL  
MIN  
NOM  
10.16  
10.04  
9.46  
4.70  
2.54  
0.56  
2.76  
1.00REF  
0.50  
15.87  
9.40REF  
6.70REF  
2.54BSC  
MAX  
10.46  
10.34  
9.66  
4.90  
2.74  
E
E1  
E2  
A
A1  
A2  
A4  
A5  
c
D
Q
H1  
e
9.86  
9.76  
9.26  
4.50  
2.34  
30  
0.  
2.63  
60  
0.  
2.89  
0.45  
15.47  
0.60  
16.27  
P
3.06  
12.58  
2.81  
7.55  
1.40  
0.95  
3.30  
3°  
3.18  
12.98  
2.93  
7.80  
1.50  
1.00  
3.45  
5°  
45°  
0.10  
1.50  
13.90  
3.30  
5.40  
8.00  
7.00  
1.35  
1.28  
0.80  
0.70  
0.50REF  
3.40  
13.38  
3.05  
8.05  
1.60  
1.05  
3.60  
7°  
L
L1  
L2  
P1  
P2  
P3  
θ1  
θ2  
DEP  
F1  
F2  
F3  
F4  
G
G1  
G3  
b1  
b2  
K1  
R
-
-
0.05  
1.00  
13.50  
3.15  
5.15  
7.70  
6.70  
1.25  
1.23  
0.75  
0.65  
0.15  
2.00  
14.30  
3.45  
5.65  
8.30  
7.30  
1.45  
1.38  
0.90  
0.75  
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12  
HY1707P/M/B/I/MF/PS/PM  
TO-3PS-3L  
SYMBOL MIN  
NOM  
MAX  
3.36  
1.27  
1.49  
0.77  
1.17  
0.48  
15.50  
9.10  
3.56 3.76  
1.30 1.37  
1.54 1.64  
0.80 0.90  
1.27 1.36  
0.50 0.56  
15.70 15.90  
9.20 9.30  
0.30 REF  
A
A1  
A2  
b
b2  
c
D
D1  
D2  
DEP  
E
E1  
E2  
E3  
e
0.05  
9.88  
7.80  
6.90  
9.90  
0.10 0.20  
10.00 10.20  
8.00 8.20  
7.10 7.30  
10.00 10.10  
2.54 BSC  
5.08 BSC  
e1  
L
L1  
P
13.25  
-
13.40 13.55  
3.00 3.30  
6.00 REF  
3.20 REF  
3.57 REF  
P1  
P2  
P3  
Q
Q1  
Q2  
U
θ1  
θ2  
θ3  
1.40  
3.93  
1.60  
6.80  
4.00  
3°  
1.50 1.60  
4.00 4.07  
1.70 1.80  
7.00 7.20  
4.20 4.40  
5°  
7°  
3°  
7°  
9°  
5°  
5°  
1°  
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13  
HY1707P/M/B/I/MF/PS/PM  
TO-3PS-3M  
SYMBOL MIN  
NOM  
MAX  
3.36  
1.27  
1.49  
0.77  
1.17  
0.48  
15.50  
9.10  
3.56 3.76  
1.30 1.37  
1.54 1.64  
0.80 0.90  
1.27 1.36  
0.50 0.56  
15.70 15.90  
9.20 9.30  
0.30 REF  
A
A1  
A2  
b
b2  
c
D
D1  
D2  
DEP  
E
E1  
E2  
E3  
e
0.05  
9.88  
7.80  
6.90  
9.90  
0.10 0.20  
10.00 10.20  
8.00 8.20  
7.10 7.30  
10.00 10.10  
2.54 BSC  
5.08 BSC  
e1  
L
L1  
P
7.25  
-
7.40 7.55  
3.00 3.30  
6.00 REF  
3.20 REF  
3.57 REF  
P1  
P2  
P3  
Q
Q1  
Q2  
U
θ1  
θ2  
θ3  
1.40  
3.93  
1.60  
6.80  
4.00  
3°  
1.50 1.60  
4.00 4.07  
1.70 1.80  
7.00 7.20  
4.20 4.40  
5°  
7°  
3°  
7°  
9°  
5°  
5°  
1°  
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14  
HY1707P/M/B/I/MF/PS/PM  
Devices Per Unit  
Package Type  
TO-220FB-3L  
TO-220FB-3S  
TO-263-2L  
Unit  
Tube  
Tube  
Tube  
Tube  
Tube  
Tube  
Tube  
Quantity  
50  
50  
50  
50  
50  
50  
50  
TO-262-3L  
TO-220MF-3L  
TO-3PS-3L  
TO-3PS-3M  
Classification Profile  
www.hooyi.cc  
15  
HY1707P/M/B/I/MF/PS/PM  
Classification Reflow Profiles  
Profile Feature  
Sn-Pb Eutectic Assembly  
Pb-Free Assembly  
Preheat & Soak  
100 °C  
150 °C  
60-120 seconds  
150 °C  
200 °C  
60-120 seconds  
Temperature min (Tsmin  
)
Temperature max (Tsmax  
)
Time (Tsmin to Tsmax) (ts)  
Average ramp-up rate  
(Tsmax to TP)  
3 °C/second max.  
3°C/second max.  
Liquidous temperature (TL)  
Time at liquidous (tL)  
183 °C  
60-150 seconds  
217 °C  
60-150 seconds  
Peak package body Temperature  
(Tp)*  
See Classification Temp in table 1  
20** seconds  
See Classification Temp in table 2  
30** seconds  
Time (tP)** within 5°C of the specified  
classification temperature (Tc)  
Average ramp-down rate (Tp to Tsmax  
)
6 °C/second max.  
6 °C/second max.  
6 minutes max.  
8 minutes max.  
Time 25°C to peak temperature  
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.  
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.  
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)  
Volume mm3  
350  
Package  
Thickness  
Volume mm3  
<350  
<2.5 mm  
235 °C  
220 °C  
220 °C  
220 °C  
³ 2.5 mm  
Table 2. Pb-free Process – Classification Temperatures (Tc)  
Package  
Thickness  
<1.6 mm  
Volume mm3  
Volume mm3  
350-2000  
260 °C  
Volume mm3  
<350  
260 °C  
260 °C  
250 °C  
>2000  
260 °C  
245 °C  
245 °C  
1.6 mm – 2.5 mm  
³ 2.5 mm  
250 °C  
245 °C  
Reliability Test Program  
Test item  
SOLDERABILITY  
Method  
JESD-22, B102  
Description  
5 Sec, 245°C  
HOLT  
PCT  
TCT  
JESD-22, A108  
JESD-22, A102  
JESD-22, A104  
1000 Hrs, Bias @ 125°C  
168 Hrs, 100%RH, 2atm, 121°C  
500 Cycles, -65°C~150°C  
www.hooyi.cc  
16  

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