IPS5551T(SMD220) [ETC]
PERIPHERAL DRIVER|1 DRIVER|MOS|SIP|3PIN|PLASTIC ; 外围驱动器|车手|马鞍山| SIP | 3PIN |塑料\n
| 型号： | IPS5551T(SMD220) |
| 厂家： | 
ETC |
| 描述： | PERIPHERAL DRIVER|1 DRIVER|MOS|SIP|3PIN|PLASTIC
|
| 文件： | 总11页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60168-C
IPS5551T
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Input referenced to + V
• E.S.D protection
• Input referenced to Vcc
Product Summary
R
V
6.0mΩ (max)
ds(on)
cc
40V
100A
clamp
Ishutdown
Description
V (op.)
cc
5.5 - 18V
The IPS5551T is a fully protected three terminal high
side switch with built-in short-circuit, over-temperature,
ESD protection, inductive load capability. The input
signal is referenced to Vcc. When the input voltage
Vcc - Vin is higher than the specified threshold, the
output power MOSFET is turned on. When the Vcc - Vin
is lower than the specified Vil threshold, the output
MOSFET is turned off. Input noise immunity is im-
proved by an hysterisis. When the input is left floating,
an internal current source pulls it up to Vcc. The over-
current protection latches off the high side switch if the
output current exceeds the specified Isd. The over-
temperature protection latches off the switch if the
junction temperature exceeds the specified value Tsd.
The device is reset by opening the input pin high.
Truth Table
(3)
Op. Conditions
Normal
Out
In
L
H
Normal
L
H
L
Over current
Over current
Over-temperature
Over-temperature
L (latched)
L
L (latched)
L
H
L
H
(3) In is referenced to Vcc.
In = L means (Vcc -Vin) >Vih
In = H means (Vcc - Vin) <Vil
Typical Connection
Packages
+ VCC
SUPER TO220
Vcc
Out
control
Input
signal
Logic
In
Load
SUPER SMD220
(Refer to lead assignment for correct pin configuration)
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1
IPS5551T
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage pa-
rameters are referenced to V lead. (T = 25oC unless otherwise specified). PCB mounting uses the standard
cc
j
footprint with 70µm copper thickness
Symbol
Parameter
Min. Max. Units Test Conditions
V
-V
cc in max
Maximum input voltage
-0.3
-0.3
-1
30
40
20
40
V
V
-V
Max. transient Input voltage (less than 1s)
Maximum input current
cc in1 max
I
mA
V
in max
V
-V
Maximum output voltage
-0.3
cc out max
(1)
I
I
I
Diode max. continuous current
sd cont.
(rth = 62oC/W)
—
2.8
A
(1)
Diode max. continuous current
sd1 cont.
(rth = 5oC/W)
—
35
100
2
(1)
Diode max. pulsed current
—
sd pulsed
(rth = 62oC/W)
P
—
W
d
Power dissipation
ESD1
ESD2
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
—
tbd
tbd
150
150
300
C = 100 pF, R = 1500Ω
kV
—
C = 200 pF, R = 0Ω, L=10µH
T
T
-55
-40
—
stor.
max.
oC
Max. junction temperature
j
Tlead
Lead temperature (soldering 10 seconds)
Thermal Characteristics
Symbol Parameter
Typ. Max. Units Test Conditions
R
R
R
R
1
2
3
4
Thermal resistance free air
60
th
th
th
th
oC/W
60
Thermal resistance with standard footprint
Thermal resistance with 1" footprint
Thermal resistance junction to case
35
0.7
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
V
V
I
- V
in
Continuous input voltage
Supply to power ground voltage
18
18
35
6
6
cc
cc
V
o
o
Continuous output current (
Continuous output current
rth c/amb. < 5 C/W, Tj = 125 C)
—
out
out
A
I
Tamb=85oC
(
o
o
TAmbient = 85 C, Tj = 125 C, free air)
—
8
(1) Limited by junction temperature. Pulsed current is also limited by wiring
2
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IPS5551T
Static Electrical Characteristics
(T = 25oC and Vcc = 14V unless otherwise specified.)
j
Symbol Parameter
Min. Typ. Max. Units Test Conditions
R
I
=35A,Vcc -Vin=12V
ON state resistance
—
4.6
6.0
ds(on) 1
out
see Fig. 6
mΩ
R
R
V
I
I
I
I
I
=17A, V -V
cc in=
ON state resistance
ON state resistance T = 150oC
j
—
—
4.6
7.4
—
—
—
6V
ds(on) 2
ds(on) 3
clamp 1
out
out
out
out
= 35A, T = 150oC
j
= 10mA
V
V
to V
to V
active clamp voltage
active clamp voltage
cc
cc
out
out
35
—
—
40
42
0.85
—
= 35A
V
V
V
I
clamp 2
sd
cc (op)
48
1
- t < 100us
V
V -V
= 0V
cc in
Body diode forward voltage
Operating voltage range
Quiescent current
= 35A,
d
5.5
—
3
28
50
12
—
V
V
V
-V
V
0V
-V
13
6.5
1.3
q
µA
cc in= , cc out=
12V
- V
- V
I
I
Input current
14V
cc
cc
in =
in =
in
mA
Input current when ON
High level input threshold voltage
Low level input threshold voltage
Input hysterisis
—
—
3
V
in, on
ih
V
V
V
4.75
4.05
0.6
5.5
—
1.5
Vcc - Vin (note 2)
Vcc - Vin (note 2)
ih
V
il
hys
0.3
Switching Electrical Characteristics
V
cc
= 14V, Resistive Load = 0.4Ω, T = 25oC, (unless otherwise specified).
j
Symbol Parameter
Min. Typ. Max. Units Test Conditions
Td
Turn-on delay time to V -V
= 0.9 V
10
—
—
30
50
on
cc out
cc
T
Rise time to V -V
cc out
= 5 V
16
r 1
µs
See figure 2
T
d
E
on
Td
Rise time from the end of Tr1 to
Vcc -Vout = 0.1 Vcc
r 2
—
200
400
1.2
25
130
25
Turn on d
V/dt
Turn ON energy
—
—
—
—
—
—
5
—
300
50
6
V/µs
mJ
V/dt (on)
See figure 3
Turn-off delay time V -V
= 0.1 V
off
cc out cc
µs
T
d
Fall time to V -V = 0.9 V
cc out cc
f
Turn OFF d
2
6
V/µs
mJ
V/dt (off)
V/dt
E
—
off
Turn OFF energy
Protection Characteristics
Tj = 25oC, and Vcc = 14V (unless otherwise specified).
Symbol Parameter
Min. Typ. Max. Units Test Conditions
T
I
Over temperature shutdown threshold
Over current shutdown threshold
Minimum time for protection reset
—
60
—
165
100
50
—
150
—
oC
A
sd
See fig. 4
sd
T
µs
reset
(2) Input threshold are measured directly between the input pin and the tab. Any parasitic resistance in common
between the load current path and the input signal path can significantly affect the thresholds.
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3
IPS5551T
Functional Block Diagram
VCC
40V
clamp
Charge
pump
10k
6mA
+
4.7V
35V
Level
shift
driver
4.1V
-
Q
S
IN
R
+
-
Over
curren
100A
Tj
+
-
Over
temperatur
165°C
VOUT
Lead Assignments
2 (Vcc)
2 ( Vcc )
1 2 3
In Vcc Out
(Advance Information)
1 2 3
In Vcc Out
Super SMD220
Super TO220
4
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IPS5551T
Vcc-Vin
Vcc-Vin max
Vcc-Vin1 max
Vcc-Vin (op)
Vih
Vcc-Vout
Vcc-Vout max
Vclamp1
Vcc-Vin
Vcc
Vclamp2
Vcc
Vil
Vhys
In
90%
Iout
IPS 5551
Iout max
-Ids cont.
-Ids pulsed
Iout 85°C
Isd
Iin
Iin
Vcc-Vout
DV/dt(on)
max
Iin1,2
5V
10 %
Iin(on)
Out
Td on
Tr2
Iq
Tr1
Figure 1 - Voltages and currents definition
Figure 2 - Switching time definitions (turn-on)
Vcc-Vin
12V
Vcc-Vin
0 V
90%
t > T reset
t < T reset
Iout
OI shutdown
Isd
Vcc-Vout
10 %
DV/dt(off)
Td off
Tj
Tf
OT shutdown
Tjsd
Figure 3 - Switching time definitions (turn-off)
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Figure 4 - Protection timing diagram
5
IPS5551T
T clamp
Vcc - Vin
POWER
Iout
Vclamp
Vcc - Vout
( Vcc )
Measurement
( see Appl . Notes to evaluate power dissipation )
Figure 6 - Rds(on) measurement schematic
Figure 5 - Active clamp waveforms
6
5
4
3
2
1
0
200
150
100
50
0
5
10
15
20
- 5 0
0
5 0
1 0 0
1 5 0
Figure 7 - Rds
(on)
(mΩ) Vs V
V
(V)
Figure 8 - Normalized Rds
(%) Vs T (oC)
(on) j
cc- in
6
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IPS5551T
5
4
3
2
1
0
single pulse
1000
100
10
10 Hz rth=60°C/W dT=25°C
100Hz rth=60°C/W dT=25°C
1
0.1
0 . 0 0 1
0
20
40
60
80
100
0 . 0 1
0 . 1
1
1 0
Figure 10 - Iclamp (A) Vs Inductive Load (µH)
Figure 9 - Rds
(mΩ) Vs I
(A)
out
(on)
100
80
60
40
20
0
1000
100
10
Limited by package
Current path capability should
be above this curve
Rthc/amb= 1°C/W
Rthc/amb= 5°C/W
Rthc/amb= 10°C/W
Load characteristic should
be below this curve
Tj = 25 °c
Rthc/amb= 20°C/W
free air
Free air
25
50
75
100
125
150
Figure 11 - Max. load current (A)
Vs Temperature (oC)
Figure 12 - I
(A) Vs Protection resp. Time (ms)
out
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7
IPS5551T
1 .0 0 E+0 2
1 .0 0 E+0 1
1 .0 0 E+0 0
120
100
80
60
40
20
0
Free air
1inch²
PCB
Infinite heatsink
1 .0 0 E- 0 1
1 .0 0 E- 0 2
1 .0 0 E- 0 3
1E-05 1E-04 0.001 0.01
0.1
1
10
100 1000
-50
0
50
100
150
Figure 14 - Transient thermal impedance (oC/W)
Vs Time (s)
Figure 13 - I (A) Vs T (oC)
sd
j
100
10
1
10
8
6
4
2
0
0.1
-50 -25
0
25
50 75 100 125 150
0
5
10
15
20
25
30
35
Figure 15 - I (mA) Vs V -V (V)
cc cc in
Figure 16 - I (mA) Vs T (oC)
in
j
8
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IPS5551T
100
80
60
40
20
0
5
4
Eon
Eoff
VIH
3
2
VIL
Hysteresis
1
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
Figure 17 - V , V threshold (V) Vs Tj (oC)
ih il
Figure 18 - E
E
(mJ) Vs I
(A)
on, off
out
100.00
I=Imax vs L (see fig.10)
10.00 30A
I=10A
1.00
0.10
0.01
Figure 19 - E (mJ) Vs Inductive load (µH)
on
(Vcc = 14V, R load =0.5Ω)
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9
IPS5551T
DZ1
VCC
R1
12V
Battery
IN
IPS5551
D2
OUT
on
LOAD
off
System
ground
Power
ground
DZ1, R1 : optional additional voltage transient protection
D2 : optional additional reverse battery protection
See application note for details
Figure 20 - Automotive typical connection
Case outline Super TO220
9.00 [.354]
8.00 [.315]
11.00 [.433]
10.00 [.394]
B
A
5.00 [.196]
4.00 [.158]
0.25 [.010]
B
A
1.50 [.059]
0.50 [.020]
13.50 [.531]
12.50 [.493]
4
15.00 [.590]
14.00 [.552]
1
2
3
LEAD ASSIGNMENTS
MOS F E T
IGBT
4.00 [.157]
3.50 [.138]
14.50 [.570]
13.00 [.512]
1 - GATE
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2 - COLLECTOR
3 - EMIT TER
4 - COLLECTOR
1.00 [.039]
0.70 [.028]
4X
1.30 [.051]
0.90 [.036]
3X
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROL L ING DI ME NS I ON: MI L L I ME T E R.
2.55 [.100]
2X
3.00 [.118]
2.50 [.099]
0.25 [.010]
B
A
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF ORMS T O JE DE C OUT L INE T O-273AA.
01-3073 02
10
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IPS5551T
Case outline Super SMD220 (advance information)
IRGB-012-012
5
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 6/25/2001
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