IRF520NSTRR [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 100V V( BR ) DSS | 9.7AI (D ) | TO- 263AB\n
IRF520NSTRR
型号: IRF520NSTRR
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-263AB
晶体管| MOSFET | N沟道| 100V V( BR ) DSS | 9.7AI (D ) | TO- 263AB\n

晶体 晶体管
文件: 总10页 (文件大小:219K)
下载:  下载PDF数据表文档文件

IRF520NSTRRPBF

暂无描述

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0 IRF

IRF520PBF

HEXFET Power MOSFET

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56 IRF

IRF520PBF

Power MOSFET

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34 VISHAY

IRF520PBF

HEXFET Power MOSFET

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37 IRF

IRF520R

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | TO-220AB

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39 ETC

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51 ETC

IRF520S

Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 MOTOROLA

IRF520STRL

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF520STRLPBF

暂无描述

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0 VISHAY

IRF520T

9 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 MOTOROLA

IRF520V

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

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72 IRF

IRF520VL

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

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42 IRF

IRF520VLPBF

HEXFET Power MOSFET

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24 IRF

IRF520VLPBF

Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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0 IRF

IRF520VPBF

HEXFET㈢ Power MOSFET

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31 IRF