IRF520STRL [VISHAY]
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;
| 型号： | IRF520STRL |
| 厂家： | 
VISHAY TELEFUNKEN |
| 描述： | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN 晶体 晶体管 功率场效应晶体管 |
| 文件： | 总8页 (文件大小：135K) |
| 下载： | 下载PDF数据表文档文件 |
IRF520STRLPBF
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
VISHAY
IRF520T
9 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MOTOROLA
IRF520V
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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72
IRF
IRF520VL
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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42
IRF
IRF520VLPBF
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
24
IRF
IRF520VLPBF
Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRF520VPBF
HEXFET㈢ Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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31
IRF
IRF520VS
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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27
IRF
IRF520VSPBF
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
19
IRF
IRF520VSTRL
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.6A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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35
ETC
IRF520VSTRR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.6A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
20
ETC
IRF520VSTRRPBF
Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
IRF
IRF521
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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311
SUPERTEX
IRF521
N-Channel Power MOSFETs, 11 A, 60-100 VWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
150
FAIRCHILD
IRF521
Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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4
SAMSUNG
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