关闭背景特效

IRF530ND [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) | CHIP ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 17A I（ D） |芯片\n

IRF530ND


元器件型号：	IRF530ND
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 17A I(D) \| CHIP 晶体管\| MOSFET \| N沟道\| 100V V（ BR ） DSS \| 17A I（ D） \|芯片\n 晶体晶体管
PDF文件：	总5页 (文件大小：104K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF530ND参数

IRF530NL

HEXFET Power MOSFET

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272 IRF

IRF530NL-102

Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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2 IRF

IRF530NL-102PBF

Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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1 IRF

IRF530NLPBF

HEXFET Power MOSFET

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40 IRF

IRF530NLPBF

Advanced Process Technology

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14 IRF

IRF530NPBF

HEXFET㈢ Power MOSFET

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327 IRF

IRF530NS

HEXFET Power MOSFET

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42 IRF

IRF530NS

Advanced Process Technology

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41 IRF

IRF530NS

Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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451 IRF

IRF530NSPBF

HEXFET Power MOSFET

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95 IRF

IRF530NSTRLPBF

Advanced Process Technology

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32 IRF

IRF530NSTRRPBF

Advanced Process Technology

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24 IRF

IRF530PBF

Power MOSFET

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83 VISHAY

IRF530PBF

Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements

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220 IRF

IRF530R

N-Channel Power MOSFETs Avalanche Energy Rated

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59 HARRIS

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