IRF9Z15 [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-220AB ; 晶体管| MOSFET | P沟道| 60V V( BR ) DSS | 4A I( D) | TO- 220AB\n
IRF9Z15
型号: IRF9Z15
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-220AB
晶体管| MOSFET | P沟道| 60V V( BR ) DSS | 4A I( D) | TO- 220AB\n

晶体 晶体管
文件: 总1页 (文件大小:101K)
下载:  下载PDF数据表文档文件

IRF9Z20

P-CHANNEL 50 VOLT POWER MOSFETs

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43 IRF

IRF9Z20

P-CHANNEL POWER MOSFETs

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70 SAMSUNG

IRF9Z20-005

Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z20-005PBF

Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z20PBF

Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRF9Z22

P-CHANNEL 50 VOLT POWER MOSFETs

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39 IRF

IRF9Z22

Power MOSFET

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29 VISHAY

IRF9Z22

Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9Z22-005

Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z22-005PBF

Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF9Z22-013

Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z22PBF

Power MOSFET

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18 VISHAY

IRF9Z24

Power MOSFET

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103 VISHAY

IRF9Z24

P-CHANNEL POWER MOSFETs

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454 SAMSUNG

IRF9Z24

POWER MOSFET

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210 IRF