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IRFI530 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-220AB ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 9.7AI （D ） | TO- 220AB
IRFI530
型号： IRFI530
厂家： ETC    ETC
描述：

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-220AB
晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 9.7AI （D ） | TO- 220AB

晶体 晶体管
文件： 总1页 (文件大小：70K)
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相关型号：

IRFI530-001

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRFI530-001PBF

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRFI530-002PBF

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRFI530-003PBF

 9.7A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET

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IRFI530-004

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRFI530-004PBF

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRFI530-005PBF

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRFI530-006

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRFI530-006PBF

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IRFI530-009PBF

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IRFI530-010

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IRFI530-011

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IRFI530-013

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IRFI530-013PBF

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IRFI530A

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IRFI530G

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IRFI530G

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IRFI530G-002PBF

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI530G-003

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI530G-003PBF

 Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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