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IRFP251R [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247 ; 晶体管| MOSFET | N沟道| 150V V（ BR ） DSS | 33A I（ D） | TO- 247\n

IRFP251R


元器件型号：	IRFP251R
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 33A I(D) \| TO-247 晶体管\| MOSFET \| N沟道\| 150V V（ BR ） DSS \| 33A I（ D） \| TO- 247\n 晶体晶体管开关脉冲局域网
PDF文件：	总1页 (文件大小：50K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFP251R参数

IRFP252

N-Channel(Hexfet Transistors)

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51 IRF

IRFP252

N-Channel Power Mosfets

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34 SAMSUNG

IRFP252

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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26 IXYS

IRFP252

Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP252R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-247

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21 ETC

IRFP253

N-Channel(Hexfet Transistors)

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56 IRF

IRFP253

N-Channel Power Mosfets

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28 SAMSUNG

IRFP253

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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22 IXYS

IRFP253

Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP253R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 27A I(D) | TO-247

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14 ETC

IRFP254

Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)

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155 IRF

IRFP254

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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59 IXYS

IRFP254

Standard Power MOSFET - N-Channel Enhancement Mode

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322 IXYS

IRFP254

Power MOSFET

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98 VISHAY

IRFP254A

$GYDQFHG 3RZHU 026)(7

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32 IRF

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