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IRFR222 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.8A I(D) | TO-251AA ; 晶体管| MOSFET | N沟道| 200V V（ BR ） DSS | 3.8AI （D ） | TO- 251AA\n
IRFR222
元器件型号： IRFR222
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.8A I(D) | TO-251AA
晶体管| MOSFET | N沟道| 200V V（ BR ） DSS | 3.8AI （D ） | TO- 251AA\n

晶体 晶体管
PDF文件： 总5页 (文件大小：332K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFR222参数
 查看货源

IRFR222-T1

 Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 SAMSUNG

IRFR224

 Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)

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132 IRF

IRFR224

 Power MOSFET

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23 KERSEMI

IRFR224

 Power MOSFET

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37 KERSEMI

IRFR224

 Power MOSFET

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46 VISHAY

IRFR224A

 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.8A I(D) | TO-252AA

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75 ETC

IRFR224ATF

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 FAIRCHILD

IRFR224ATM

 暂无描述

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0 FAIRCHILD

IRFR224B

 250V N-Channel MOSFET

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87 FAIRCHILD

IRFR224BTF_FP001

 Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

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0 FAIRCHILD

IRFR224BTM

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

IRFR224BTM

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

IRFR224BTM_FP001

 Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

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0 FAIRCHILD

IRFR224BTM_NL

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 FAIRCHILD

IRFR224PBF

 Power MOSFET

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26 VISHAY
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