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元器件品牌
IRFS11N50ATRR
[ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 11A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 11A I（ D） | TO- 263AB
元器件型号：
IRFS11N50ATRR
生产厂家：
ETC
描述和应用：
TRANSISTOR | MOSFET | N-CHANNEL | 11A I(D) | TO-263AB
晶体管| MOSFET | N沟道| 11A I（ D） | TO- 263AB
晶体 晶体管 开关 脉冲 局域网
PDF文件：
总9页 (文件大小：150K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFS11N50ATRR参数
查看货源
IRFS11N50ATRRP
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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0
VISHAY
IRFS11N50ATRRPBF
Power MOSFET
Warning
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156
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21
VISHAY
IRFS130
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
-
0
SAMSUNG
IRFS131
Power Field-Effect Transistor, 9.7A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
-
0
SAMSUNG
IRFS132
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SAMSUNG
IRFS133
Power Field-Effect Transistor, 8.3A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
-
0
SAMSUNG
IRFS140
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19.4A I(D) | SOT-186VAR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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29
ETC
IRFS140A
Advanced Power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
17
FAIRCHILD
IRFS141
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19.4A I(D) | SOT-186VAR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
19
ETC
IRFS142
Power Field-Effect Transistor, 17.3A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SAMSUNG
IRFS142
Power Field-Effect Transistor, 17.3A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SAMSUNG
IRFS143
Power Field-Effect Transistor, 17.3A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SAMSUNG
IRFS143
Power Field-Effect Transistor, 17.3A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SAMSUNG
IRFS150
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 27.7A I(D) | SOT-186VAR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
33
ETC
IRFS150A
Advanced Power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
27
FAIRCHILD
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