IRFS9140 [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 13.2A I(D) | SOT-186VAR ; 晶体管| MOSFET | P沟道| 100V V( BR ) DSS | 13.2AI (D ) | SOT- 186VAR\n
IRFS9140
型号: IRFS9140
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 13.2A I(D) | SOT-186VAR
晶体管| MOSFET | P沟道| 100V V( BR ) DSS | 13.2AI (D ) | SOT- 186VAR\n

晶体 晶体管 局域网
文件: 总5页 (文件大小:288K)
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IRFS9141

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 13.2A I(D) | SOT-186VAR

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12 ETC

IRFS9142

Power Field-Effect Transistor, 10.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS9143

Power Field-Effect Transistor, 10.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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1 SAMSUNG

IRFS9240

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 7.6A I(D) | SOT-186VAR

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19 ETC

IRFS9241

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7.6A I(D) | SOT-186VAR

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13 ETC

IRFS9520

Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9521

Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9522

Power Field-Effect Transistor, 5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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1 SAMSUNG

IRFS9523

Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9523

Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9530

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 8A I(D) | SOT-186

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35 ETC

IRFS9530

Power Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRFS9531

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | SOT-186

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14 ETC

IRFS9531

Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRFS9533

Power Field-Effect Transistor, 10A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG