关闭背景特效

IRFU9121 [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-251 ; 晶体管| MOSFET | P沟道| 80V V（ BR ） DSS | 6A I（ D） | TO- 251\n

IRFU9121


元器件型号：	IRFU9121
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| P-CHANNEL \| 80V V(BR)DSS \| 6A I(D) \| TO-251 晶体管\| MOSFET \| P沟道\| 80V V（ BR ） DSS \| 6A I（ D） \| TO- 251\n 晶体晶体管脉冲
PDF文件：	总8页 (文件大小：525K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFU9121参数

IRFU9210

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)

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53 IRF

IRFU9210

Power MOSFET

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42 VISHAY

IRFU9210

Power MOSFET

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6 KERSEMI

IRFU9210

Power MOSFET

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8 KERSEMI

IRFU9210

Power MOSFET

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22 KERSEMI

IRFU9210N

HEXFET Power MOSFET

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20 IRF

IRFU9210PBF

Power MOSFET

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5 KERSEMI

IRFU9210PBF

Power MOSFET

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26 KERSEMI

IRFU9210PBF

Power MOSFET

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14 VISHAY

IRFU9210PBF

HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0ヘ , ID = -1.9A )

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17 IRF

IRFU9211

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-251AA

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21 ETC

IRFU9212

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.6A I(D) | TO-251AA

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19 ETC

IRFU9212

Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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1 SAMSUNG

IRFU9214

Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

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29 IRF

IRFU9214

Power MOSFET

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15 VISHAY

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