关闭背景特效

IRFY120SM [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | CHIP ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS |我8A （D ） |芯片\n

IRFY120SM


元器件型号：	IRFY120SM
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| CHIP 晶体管\| MOSFET \| N沟道\| 100V V（ BR ） DSS \|我8A （D ） \|芯片\n 晶体晶体管
PDF文件：	总2页 (文件大小：96K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFY120SM参数

IRFY130

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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32 SEME-LAB

IRFY130

Simple Drive Requirements Ease of Paralleling Hermetically Sealed

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11 IRF

IRFY130C

N-Channel MOSFET in a Hermetically sealed

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10 SEME-LAB

IRFY130C

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA

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13 ETC

IRFY130C

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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0 INFINEON

IRFY130CM

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A)

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28 IRF

IRFY130CMSCXPBF

暂无描述

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0 IRF

IRFY130M

N-Channel

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10 ETC

IRFY130M

N-Channel MOSFET in a Hermetically sealed

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8 SEME-LAB

IRFY130M

Simple Drive Requirements Ease of Paralleling Hermetically Sealed

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15 IRF

IRFY130MEA

Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY130SM

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | CHIP

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5 ETC

IRFY1310M-T257

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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10 SEME-LAB

IRFY140

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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110 SEME-LAB

IRFY140C

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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16 SEME-LAB

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