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元器件品牌
IRFY1310M-T257
[SEME-LAB]
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS; N沟道功率MOSFET用于HI- REL应用
元器件型号：
IRFY1310M-T257
生产厂家：
SEME LAB
描述和应用：
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
N沟道功率MOSFET用于HI- REL应用
PDF文件：
总2页 (文件大小：24K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFY1310M-T257参数
查看货源
IRFY140
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
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110
SEME-LAB
IRFY140C
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
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156
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16
SEME-LAB
IRFY140C
POWER MOSFET THRU-HOLE (TO-257AA)
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54
IRF
IRFY140CM
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)
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59
IRF
IRFY140CMPBF
暂无描述
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156
-
0
IRF
IRFY140CMSCS
Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
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: Undefined variable $rtag in
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-
0
IRF
IRFY140CMSCX
Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
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: Undefined variable $rtag in
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156
-
0
IRF
IRFY140M
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 18.4A I(D) | TO-220
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31
ETC
IRFY140ME
暂无描述
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156
-
0
IRF
IRFY140MEA
暂无描述
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: Undefined variable $rtag in
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156
-
0
IRF
IRFY140MEB
Power Field-Effect Transistor, 18A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
IRF
IRFY140MED
Power Field-Effect Transistor, 18A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
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156
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0
IRF
IRFY140-T257
N-CHANNEL POWER MOSFET
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156
-
15
SEME-LAB
IRFY141
N-Channel
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on line
156
-
22
ETC
IRFY210
N-Channel
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
10
ETC
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