IRFY210 [ETC]

N-Channel ; N沟道\n
IRFY210
型号: IRFY210
厂家: ETC    ETC
描述:

N-Channel
N沟道\n

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IRFY210C

N-Channel MOSFET in a Hermetically sealed

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4 SEME-LAB

IRFY210C

N-Channel

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53 ETC

IRFY220

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.3A I(D) | TO-220AB

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13 ETC

IRFY220

N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.

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11 SEME-LAB

IRFY220SM

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | CHIP

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7 ETC

IRFY230

N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS

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11 SEME-LAB

IRFY230

N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS

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11 SEME-LAB

IRFY230C

N-Channel

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8 ETC

IRFY230C

N-Channel MOSFET in a Hermetically sealed

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5 SEME-LAB

IRFY230CM

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,

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0 IRF

IRFY230CM

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,

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0 INFINEON

IRFY230CMPBF

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY230CMPBF

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 INFINEON

IRFY230CMSCXPBF

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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0 IRF

IRFY230CMSCXPBF

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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0 INFINEON