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元器件品牌
IRFY230
[SEME-LAB]
N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS; N沟道功率MOSFET用于HI- REL应用
元器件型号：
IRFY230
生产厂家：
SEME LAB
描述和应用：
N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
N沟道功率MOSFET用于HI- REL应用
晶体 晶体管 脉冲 局域网
PDF文件：
总2页 (文件大小：55K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFY230参数
查看货源
IRFY230C
N-Channel
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156
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8
ETC
IRFY230C
N-Channel MOSFET in a Hermetically sealed
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156
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5
SEME-LAB
IRFY230CM
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,
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: Undefined variable $rtag in
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0
IRF
IRFY230CM
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,
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: Undefined variable $rtag in
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0
INFINEON
IRFY230CMPBF
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
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: Undefined variable $rtag in
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156
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0
IRF
IRFY230CMPBF
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
INFINEON
IRFY230CMSCXPBF
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
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0
IRF
IRFY230CMSCXPBF
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
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: Undefined variable $rtag in
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156
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0
INFINEON
IRFY230SM
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | CHIP
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156
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6
ETC
IRFY240
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
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: Undefined variable $rtag in
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156
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33
SEME-LAB
IRFY240
N-CHANNEL POWER MOSFET
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: Undefined variable $rtag in
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156
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15
SEME-LAB
IRFY240_11
N-CHANNEL POWER MOSFET
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156
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17
SEME-LAB
IRFY240C
POWER MOSFET THRU-HOLE (TO-257AA
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156
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72
IRF
IRFY240C
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.
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: Undefined variable $rtag in
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on line
156
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33
SEME-LAB
IRFY240CM
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A)
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: Undefined variable $rtag in
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88
IRF
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