IRFY9130M [ETC]

P-Channel ; P沟道\n

IRFY9130M


型号：	IRFY9130M
厂家：	ETC
描述：	P-Channel P沟道\n 晶体晶体管开关脉冲局域网
文件：	总1页 (文件大小：14K)
下载：	下载PDF数据表文档文件

IRFY9130MEAPBF

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY9130MEB

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY9130MEBPBF

暂无描述

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0 IRF

IRFY9130MEDPBF

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY9140

POWER MOSFET THRU-HOLE (TO-257AA)

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39 IRF

IRFY9140

Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRFY9140

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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25 SEME-LAB

IRFY9140C

POWER MOSFET THRU-HOLE (TO-257AA)

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15 IRF

IRFY9140C

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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18 SEME-LAB

IRFY9140CM

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A)

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30 IRF

IRFY9140CM

POWER MOSFET THRU-HOLE (TO-257AA)

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15 IRF

IRFY9140CMPBF

Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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0 IRF

IRFY9140CMSCX

Power Field-Effect Transistor, 15.8A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

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0 IRF

IRFY9140CMSCXPBF

Power Field-Effect Transistor, 15.8A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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0 IRF

IRFY9140CPBF

Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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1 IRF

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