IRFZ34NSTRR [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 55V V（ BR ） DSS | 29A I（ D） | TO- 263AB\n
| 型号： | IRFZ34NSTRR |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-263AB
|
| 文件： | 总10页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profilethrough-hole(IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.040Ω
G
l Fully Avalanche Rated
ID = 29A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Thethrough-holeversion(IRFZ34NL)isavailableforlow-
profileapplications.
2
D
Pa k
T O -2 6 2
Absolute Maximum Ratings
Parameter
Max.
29
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
20
A
100
3.8
68
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
0.45
± 20
130
16
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
5.6
5.0
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
––––
––––
Max.
2.2
Units
RθJC
RθJA
°C/W
Junction-to-Ambient (PCB mount) **
40
8/25/97
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IRFZ34NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mAꢀ
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.040
2.0 ––– 4.0
6.5 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 34
––– ––– 6.8
––– ––– 14
––– 7.0 –––
––– 49 –––
––– 31 –––
––– 40 –––
Ω
V
S
VGS = 10V, ID = 16A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 16A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 16A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13 ꢀ
VDD = 28V
RiseTime
ID = 16A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 18Ω
RD = 1.8Ω, See Fig. 10 ꢀ
Between lead,
and center of die contact
VGS = 0V
nH
pF
LS
Internal Source Inductance
––– 7.5 –––
Ciss
Coss
Crss
Input Capacitance
––– 700 –––
––– 240 –––
––– 100 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
––– ––– 29
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 100
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.6
––– 57 86
––– 130 200
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
TJ = 25°C, IS = 16A, VGS = 0V
ns
TJ = 25°C, IF = 16A
Qrr
ton
nC di/dt = 100A/µs ꢀ
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRFZ34N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRFZ34NS/L
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
BOTT OM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T = 25°C
T = 175°C
= C
J
C
T
= 175°C
J
C
1
0.1
A
1
A
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2. 4
2. 0
1. 6
1. 2
0. 8
0. 4
0. 0
1 0 0
1 0
1
I
= 26A
D
T
= 25°C
J
T
= 175°C
J
V
= 2 5V
DS
V
= 10V
20µs P U LS E W IDTH
G S
A
1 0 A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
4
5
6
7
8
9
TJ , Junction Tem perature (°C)
VG S , Gate-to-Sou rce Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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IRFZ34NS/L
1200
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 16A
GS
iss
D
= C
= C
= C
+ C
+ C
,
C
SHORTED
ds
gs
gd
ds
gd
V
V
= 44V
= 28V
DS
DS
rss
oss
1000
800
600
400
200
0
C
C
gd
is s
o ss
C
rs s
4
FOR TES T CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1 0 0 0
1 0 0
1 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
10µs
T
= 175°C
J
100µs
T
= 25°C
J
1m s
T
T
= 25°C
= 175°C
C
J
10m s
S ingle Pulse
V
= 0V
GS
1
A
1
A
0. 4
0. 8
1. 2
1. 6
2. 0
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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IRFZ34NS/L
RD
VDS
VGS
30
25
20
15
10
5
D.U.T.
RG
+ VDD
-
10 V
Pulse Width≤ 1µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
10%
25
50
75
100
125
150
175
V
GS
°
, Case Temperature ( C)
T
C
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
CaseTemperature
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
thJC
2. Peak T = P
x Z
+ T
C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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IRFZ34NS/L
250
200
150
100
50
I
D
TOP
6.5A
11A
B OTTOM 16A
L
V
DS
D.U.T.
R
+
-
G
V
DD
I
10V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
D D
0
A
175
V
(BR)DSS
25
75
100
125
150
Starting TJ , Junction Temperature (°C)
t
p
V
DD
Fig 12c. Maximum Avalanche Energy
V
DS
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
V
10 V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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IRFZ34NS/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14.ForN-ChannelHEXFETS
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IRFZ34NS/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMM ENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
NOTES:
LEAD ASSIGNM ENTS
1 - GATE
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOU RC E
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMEN SION S DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
LOT CODE
YY = YEAR
W W = W EEK
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IRFZ34NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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IRFZ34NS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
F EED D IR EC TIO N
1 .8 5 (.0 7 3 )
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
1 .6 5 (.0 6 5 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
TR L
1. 75 (.0 69 )
1. 25 (.0 49 )
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE ED D IR EC TION
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
6 0.0 0 (2 .36 2)
M IN .
3 0.4 0 (1 .19 7)
M A X .
N O T ES
:
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D
4. IN C LU D E S F L AN G E D IS T O R T IO N
26 .40 (1. 03 9)
24 .40 (.9 61 )
4
@ H U B .
3
@
O U T E R ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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相关型号：
IRFZ34PBF
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