IRHG110 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 950MA I(D) | DIP ; 晶体管| MOSFET | N沟道| 100V V( BR ) DSS | 950mA的I( D) | DIP\n型号: | IRHG110 |
厂家: | ETC |
描述: | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 950MA I(D) | DIP
|
文件: | 总1页 (文件大小:79K) |
下载: | 下载PDF数据表文档文件 |
IRHG3110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
19
IRF
IRHG3110
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, MO-036AB, 14 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHG3214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
6
IRF
IRHG3214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
10
IRF
IRHG3214PBF
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHG3214PBF
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHG4110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
29
IRF
IRHG4110PBF
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, MO-036AB, 14 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHG4214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
11
IRF
IRHG4214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
19
IRF
IRHG4214PBF
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHG53110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
20
IRF
IRHG53110PBF
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHG54110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
20
IRF
IRHG54110PBF
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
©2020 ICPDF网 联系我们和版权申明