IRHM8250D [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR ; 晶体管| MOSFET | N沟道| 200V V（ BR ） DSS | 26A I（ D） | TO- 254VAR\n
| 型号： | IRHM8250D |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR
|
| 文件： | 总12页 (文件大小：808K) |
| 下载： | 下载PDF数据表文档文件 |
IRHM8250PBF
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHM8250U
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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10
ETC
IRHM8260
RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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11
IRF
IRHM8260D
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 35A I(D) | TO-254VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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5
ETC
IRHM8260D
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHM8260DPBF
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHM8260U
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 35A I(D) | TO-254VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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13
ETC
IRHM8260U
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IRF
IRHM8360
REPETITIVE AVALANCHE AND dv/dt RATEDWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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22
IRF
IRHM8360
REPETITIVE AVALANCHE AND dv/dt RATEDWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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23
IRF
IRHM8360
Power Field-Effect Transistor, 22A I(D), 400V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHM8360D
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22A I(D) | TO-254VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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5
ETC
IRHM8360D
Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHM8360DPBF
Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHM8360PBF
Power Field-Effect Transistor, 22A I(D), 400V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
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