IRHM8260DPBF [INFINEON]
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN;型号: | IRHM8260DPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:265K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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