IRHM93064 [ETC]

-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package ; -60V 300kRad高可靠性的单P沟道TID硬化MOSFET采用TO - 254AA封装\n


型号：	IRHM93064
厂家：	ETC
描述：	-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package -60V 300kRad高可靠性的单P沟道TID硬化MOSFET采用TO - 254AA封装\n 晶体晶体管开关脉冲局域网
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PD - 91438C

IRHM9064

JANSR2N7424

60V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

REF: MIL-PRF-19500/660

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM9064

100K Rads (Si)

0.05Ω

-35A* JANSR2N7424

-35A* JANSF2N7424

IRHM93064

300K Rads (Si) 0.05Ω

International Rectifier’s RAD-Hard HEXFET^TMtechnol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

TO-254AA

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

LowTotal Gate Charge

ProtonTolerant

SimpleDriveRequirements

EaseofParalleling

Hermetically Sealed

Ceramic Package

LightWeight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-35*

-30

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-140

250

@ T = 25°C

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

-35

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

-5.5

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10 S)

9.3 (typical)

*Current is limited by internal wire diameter

For footnotes refer to the last page

www.irf.com

02/20/03

IRHM9064

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

-60

—

= 0V, I =-1.0mA

DSS

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.056

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.050

0.053

-4.0

—

= -12V, I = -30A➀

DS(on)

GS D

Ω

= -12V, I = -35A➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

-2.0

—

= V , I = -1.0mA

GS(th)

Ω

S ( )

>-15V, I

= -30A ➀

-25

= -48V ,V =0V

DS GS

DSS

µA

—

-250

= -48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

6.8

-100

100

300

= -20V

GSS

= 20V

GSS

=-12V, I = -35A

d(on)

= -30V

= -30V, I = -35A,

DD D

V =-12V, R = 2.35Ω

150

200

—

Turn-Off Delay Time

FallTime

Total Inductance

d(off)

+ L

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

Input Capacitance

—

6700

2800

920

—

= 0V, V

= -25V

f = 1.0MHz

iss

GS DS

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

-35*

Pulse Source Current (Body Diode) ➀

-140

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-3.0

270

2.5

T = 25°C, I = -35A, V

= 0V ➀

µC

T = 25°C, I = -35A, di/dt ≤ -100A/µs

≤ -50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

*Current is limited by internal wire diameter

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

thJC

thCS

thJA

Junction-to-Case

Case-to-Sink

—

0.21

—

0.50

—

°C/W

Junction-to-Ambient

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHM9064

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

Parameter

100KRads(Si)¹

300K Rads (Si)²

Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

-60

-2.0

—

-60

-2.0

—

= 0V, I = -1.0mA

DSS

GS D

-4.0

-100

100

-25

-5.0

-100

100

-25

= V , I = -1.0mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

= -20V

= 20 V

GSS

—

GSS

—

µA

=-48V, V =0V

DS GS

DSS

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (TO-254AA)

Diode Forward Voltage

➀

—

0.05

—

0.05

Ω

= -12V, I =-30A

DS(on)

➀

—

0.05

-3.0

—

0.05

- 3.0

Ω

= -12V, I =-30A

➀

= 0V, I = -35A

GS S

1. Part number IRHM9064 (JANSR2N7424)

2. Part number IRHM93064 (JANSF2N7424)

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

VDS(V)

LET

MeV/(mg/cm²))

Energy Range

Ion

(MeV)

(µm)

@VGS=0V

@VGS=5V @VGS=10V @VGS=15V @VGS=20V

285

305

345

-60

-55

-40

-60

-45

-35

-50

-35

—

-35

-30

—

36.8

59.9

32.8

-80

-60

-40

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHM9064

Pre-Irradiation

1000

100

1000

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

TOP

BOTTOM -5.0V

100

-5.0V

20µs PULSE WIDTH

T = 25 C

T = 150 C

0.1

100

-V , Drain-to-Source Voltage (V)

Fig1. TypicalOutputCharacteristics

Fig2. TypicalOutputCharacteristics

1000

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-48A

-35A

T = 25 C

100

T = 150 C

= -25V

20µs PULSE WIDTH

=-12V

10 11

-60 -40 -20

20 40 60 80 100 120 140 160

-V , Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

Fig3. TypicalTransferCharacteristics

Fig4. NormalizedOn-Resistance

Vs.Temperature

www.irf.com

Pre-Irradiation

IRHM9064

12000

10000

8000

6000

4000

2000

= -35A

= 0V,

f = 1MHz

= C + C

SHORTED

=-48V

=-30V

iss

gd ,

= C

rss

= C + C

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

200

300

400

100

, Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig6. TypicalGateChargeVs.

Fig5. TypicalCapacitanceVs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

1000

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100us

T = 150 C

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

4.0

0.1

0.0

100

1000

1.0

2.0

3.0

5.0

-V , Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig8. MaximumSafeOperatingArea

Fig7. TypicalSource-DrainDiode

ForwardVoltage

www.irf.com

IRHM9064

Pre-Irradiation

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig10a. SwitchingTimeTestCircuit

d(on)

d(off)

10%

100

125

150

, Case Temperature ( C)

90%

Fig9. MaximumDrainCurrentVs.

CaseTemperature

Fig10b. SwitchingTimeWaveforms

0.50

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

0.001

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T =P

x Z

+ T

thJC

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

www.irf.com

Pre-Irradiation

IRHM9064

D S

1400

1200

1000

800

600

400

200

TOP

-21A

-30A

BOTTOM -48A

D .U .T

D D

A S

D R IV E R

-V20_GV_S

0.01

Ω

15V

Fig12a. UnclampedInductiveTestCircuit

100

125

150

Starting T , Junction Temperature ( C)

Fig12c. MaximumAvalancheEnergy

Vs.DrainCurrent

(BR)DSS

Fig12b. UnclampedInductiveWaveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-12V

12V

.3µF

-12V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig13b. GateChargeTestCircuit

Fig13a. BasicGateChargeWaveform

www.irf.com

IRHM9064

Pre-Irradiation

Foot Notes:

➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀ Total Dose Irradiation with V

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

Bias.

= 0 during

-12 volt V

applied and V

➀ V

= -25V, starting T = 25°C, L=0.82mH

Peak I = -35A, V

=-12V

irradiation per MIL-STD-750, method 1019, condition A.

➀ I

≤ -35A, di/dt ≤ -150A/µs,

➀ Total Dose Irradiation with V Bias.

= 0 during

≤ -60V, T ≤ 150°C

-48 volt V

applied and V

DS GS

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions —TO-254AA

0.12 [.005]

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

3.78 [.149]

3.53 [.139]

3.78 [.149]

3.53 [.139]

1.27 [.050]

1.02 [.040]

1.27 [.050]

1.02 [.040]

20.32 [.800]

20.07 [.790]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

17.40 [.685]

16.89 [.665]

13.84 [.545]

13.59 [.535]

22.73 [.895]

21.21 [.835]

13.84 [.545]

13.59 [.535]

R 1.52 [.060]

4.06 [.160]

3.56 [.140]

17.40 [.685]

16.89 [.665]

0.84 [.033]

MAX.

4.82 [.190]

3.81 [.150]

1.14 [.045]

0.89 [.035]

3.81 [.150]

1.14 [.045]

0.89 [.035]

0.36 [.014]

3.81 [.150]

0.36 [.014]

B A

NOTES :

PIN ASSIGNMENTS

1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLINGDIMENSION: INCH.

DRAIN

SOURCE

GATE

4. CONFORMS TOJEDECOUTLINE TO-254AA.

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/03

www.irf.com

IRHM93064 [ETC]

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