IRL6903 [ETC]
;
| 型号： | IRL6903 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总8页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1538B
IRL6903
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = -30V
RDS(on) = 0.011Ω
G
l P-Channel
l Fully Avalanche Rated
ID = -105Aꢀ
S
Description
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
-105ꢀ
-74
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
A
-360
PD @TC = 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
Single Pulse Avalanche Energy
Avalanche Current
1000
-55
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
20
mJ
-5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.75
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
10/7/97
IRL6903
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.028 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.011
––– ––– 0.02
-1.0 ––– –––
VGS = -10V, ID = -55A
VGS = -4.5V, ID = -46A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -65A
VDS = -30V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 150°C
VGS = -16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
36
––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 100
––– ––– 44
––– ––– 55
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 16V
Qg
ID = -55A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -24V
VGS = -4.5V, See Fig. 6 and 13
–––
––– 130 –––
––– 88 –––
16 –––
VDD = -15V
ID = -55A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω, VGS = -4.5V
RD = 0.26Ω, See Fig. 10
Between lead,
––– 150 –––
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
6mm (0.25in.)
nH
pF
G
from package
––– 7.5 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 4400 –––
––– 2000 –––
––– 590 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
-105ꢀ
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-360
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.3
––– 82 120
––– 170 260
V
TJ = 25°C, IS = -55A, VGS = 0V
ns
TJ = 25°C, IF = -55A
Qrr
ton
nC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀ Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
Starting TJ = 25°C, L = 0.66mH
RG = 25Ω, IAS = -55A. (See Figure 12)
ISD ≤ -55A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRL6903
1000
100
10
1000
100
10
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.0V
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.0V
TOP
TOP
BOTTOM -2.5V
BOTTOM -2.5V
1
-2.5V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 175 C
J
-2.5V
1
°
°
0.1
0.1
1
0.1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
-91A
=
I
D
°
T = 25 C
J
°
T = 175 C
J
100
10
1
1.5
1.0
0.5
0.0
V
= -25V
DS
20µs PULSE WIDTH
V
= -10V
GS
0.1
2
3
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
-V , Gate-to-Source Voltage (V)
GS
°
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL6903
15
12
9
8000
I
D
= -55A
V
= 0V,
f = 1MHz
= C + C SHORTED
ds
GS
C
C
iss
gs
gd ,
C
= C
V
=-24V
=-15V
rss
gd
DS
C
= C + C
V
oss
ds
gd
DS
6000
4000
2000
0
C
C
iss
oss
6
3
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50
100
150
200
250
300
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
1
°
T = 25 C
C
J
T = 175°C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.2
0.8
1.4
2.0
2.6
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRL6903
120
105
90
75
60
45
30
15
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
-
+
VDD
-4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL6903
3000
2500
2000
1500
1000
500
L
I
V
D
D S
TOP
-22A
-39A
BOTTOM -55A
R
G
D .U .T
AS
V
D D
A
I
D R IVER
10
-2V
0 .0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
0
25
50
75
100
125
150
175
°
( C)
Starting T , Junction Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-4.5V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL6903
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRL6903
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
-
B
-
3.78 (.14 9)
3.54 (.13 9)
2 .87 ( .1 13 )
2 .62 ( .1 03 )
4 .69 ( .1 85 )
4 .20 ( .1 65 )
1 .3 2 (.0 52 )
1 .2 2 (.0 48 )
-
A
-
6.4 7 (.25 5)
6.1 0 (.24 0)
4
1 5.24 ( .6 0 0)
1 4.84 ( .5 8 4)
1.15 ( .0 4 5)
L E A D A S S IG N M E N T S
M IN
1
2
3
4
-
-
-
-
G A T E
1
2
3
D R A IN
S O U R C E
D R A IN
1 4.09 (.5 5 5)
1 3.47 (.5 3 0)
4.0 6 (.16 0)
3.5 5 (.14 0)
0 .93 ( .0 37 )
0 .69 ( .0 27 )
0.5 5 (.02 2)
0.4 6 (.01 8)
3X
3X
1 .4 0 (.05 5 )
1 .1 5 (.04 5 )
3 X
0 .3 6 (.01 4)
M
B
A
M
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
2 .54 ( .1 00 )
2X
N O T E S :
1
2
D IM E N S IO N IN G
C O N T R O L LIN G
&
T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 98 2.
IM E N S IO IN C H
3
O
U T L IN E C O N F O R M S T O J E D E C O U T LIN E T O -2 20 A B .
D
N
:
4
H E A T S IN L E A D E A S U R E M E N T S N O IN C L U D E B U R R S .
K
&
M
D
O
T
Part Marking Information
TO-220AB
EXAM PLE : THIS IS AN IRF1010
A
W ITH ASSEMBLY
INTERNATIONAL
PART NUM BER
LOT CODE 9B1M
RECTIFIER
LOGO
IRF1010
9246
9B
1M
DATE CODE
(YYW W )
ASSEM BLY
LOT CODE
YY
=
YEAR
W W
= W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
10/97
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