IS61C3216B-20KI [ETC]
x16 SRAM ; X16 SRAM
| 型号： | IS61C3216B-20KI |
| 厂家： | 
ETC |
| 描述： | x16 SRAM
|
| 文件： | 总8页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS61C3216B
ISSI®
DECEMBER 2000
32K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
DESCRIPTION
The ISSI IS61C3216B is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields fast access times with low power consumption.
• High-speed access time: 10, 12, 15, and 20 ns
• CMOS low power operation
— 450 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 5V 10% power supply
• I/O compatible with 3.3V device
The device is active when CE is HIGH. When CE is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down to 250 µW
(typical) with CMOS input levels.
• Fully static operation: no clock or refresh
required
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable(WE)controlsbothwritingandreadingofthememory.A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
• Three state outputs
• Industrialtemperatureavailable
• Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type II)
The IS61C3216B is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
32K x 16
MEMORY ARRAY
A0-A14
DECODER
VCC
GND
I/O0-I/O7
Lower Byte
I/O
DATA
COLUMN I/O
CIRCUIT
I/O8-I/O15
Upper Byte
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
1
IS61C3216B
ISSI®
PIN CONFIGURATIONS
44-Pin SOJ
44-Pin TSOP (Type II)
NC
A14
A13
A12
A11
CE
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
2
A1
3
A2
4
OE
5
UB
6
LB
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
7
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
8
9
9
10
11
12
13
14
15
16
17
18
19
20
21
22
10
11
12
13
14
15
16
17
18
19
20
21
22
A3
A4
A5
A6
A3
A4
A8
A7
NC
A8
A5
A7
A6
NC
NC
NC
PIN DESCRIPTIONS
LB
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
A0-A14
I/O0-I/O15
CE
Address Inputs
UB
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
NC
Vcc
GND
Power
OE
Ground
WE
TRUTH TABLE
Mode
WE
CE
OE
LB
UB
I/O0-I/O7
I/O8-I/O15 Vcc Current
Not Selected
X
L
X
X
X
High-Z
High-Z
ISB1, ISB2
Output Disabled
H
X
H
H
H
X
X
H
X
H
High-Z
High-Z
High-Z
High-Z
ICC
Read
Write
H
H
H
H
H
H
L
L
L
L
H
L
H
L
L
DOUT
High-Z
DOUT
High-Z
DOUT
ICC
DOUT
L
L
L
H
H
H
X
X
X
L
H
L
H
L
L
DIN
High-Z
DIN
High-Z
DIN
ICC
DIN
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61C3216B
ISSI®
ABSOLUTE MAXIMUM RATINGS(1)
Note:
1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
thoseindicatedintheoperationalsec-
tions of this specification is not im-
plied. Exposuretoabsolutemaximum
ratingconditionsforextendedperiods
may affect reliability.
Symbol Parameter
Value
–0.5 to +7.0
–0.5 to +7.0
–65 to +150
1.5
Unit
V
VCC
VTERM
TSTG
PT
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
1
V
°C
W
Power Dissipation
IOUT
DC Output Current (LOW)
20
mA
2
OPERATING RANGE
3
Range
Ambient Temperature
Speed
VCC
Commercial
0°C to +70°C
-10, -12 5V 5%
-15, -20 5V 10%
Industrial
–40°C to +85°C
-12 5V 5%
-15, -20 5V 10%
4
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
5
Symbol Parameter
Test Conditions
Min.
2.4
—
Max.
Unit
V
VOH
VOL
VIH
VIL
ILI
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
—
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
0.4
V
6
2.2
–0.5
–2
VCC + 0.5
V
0.8
2
V
GND - VIN - VCC
µA
µA
7
ILO
Output Leakage
GND - VOUT - VCC, Outputs Disabled
–2
2
Notes:
1. VIL (min.) = –3.0V for pulse width less than 10 ns.
8
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
9
-10 ns
-12 ns
-15 ns
-20 ns
Min. Max. Unit
Symbol Parameter
Test Conditions
Min. Max. Min. Max.
Min. Max.
ICC
Vcc Dynamic Operating
VCC = Max.,
Com.
Ind.
—
—
300
—
—
—
270
290
—
—
250
270
—
—
230 mA
250
Supply Current
IOUT = 0 mA, f = fMAX
10
11
12
ISB1
TTL Standby Current
(TTL Inputs)
VCC = Max.,
Com.
Ind.
—
—
40
—
—
—
40
45
—
—
40
45
—
—
40
45
mA
VIN = VIH or VIL
CE • VIH , f = 0
ISB2
CMOS Standby
VCC = Max.,
Com.
Ind.
—
—
5
—
—
5
—
—
5
—
—
5
mA
Current (CMOS Inputs)
CE • VCC – 0.2V,
VIN • VCC – 0.2V, or
VIN - 0.2V, f = 0
—
10
10
10
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
3
IS61C3216B
ISSI®
CAPACITANCE(1)
Symbol
CIN
Parameter
Conditions
VIN = 0V
Max.
Unit
pF
Input Capacitance
6
8
COUT
Input/Output Capacitance
VOUT = 0V
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-10
-12
-15
-20
Symbol
tRC
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
Read Cycle Time
10
—
3
—
10
—
10
5
12
—
3
—
12
—
12
5
15
—
3
—
15
—
15
7
20
—
3
—
20
—
20
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAA
Address Access Time
Output Hold Time
CE Access Time
tOHA
tACE
—
—
0
—
—
0
—
—
0
—
—
—
0
tDOE
OE Access Time
(2)
tHZOE
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
5
6
7
8
(2)
tLZOE
0
—
5
0
—
6
0
—
7
—
8
(2
tHZCE
0
0
0
0
(2)
tLZCE
4
—
5
4
—
6
4
—
7
4
—
8
tBA
—
0
—
0
—
0
—
—
5
tHZB
tLZB
5
6
7
8
5
—
5
—
5
—
—
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Unit
0V to 3.0V
3 ns
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
1.5V
Output Load
See Figures 1a and 1b
AC TEST LOADS
319 Ω
319 Ω
3.3V
3.3V
OUTPUT
OUTPUT
353 Ω
353 Ω
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figure 1a.
Figure 1b.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61C3216B
ISSI®
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = VIH, OE = VIL, UB or LB = VIL)
1
tRC
ADDRESS
2
tAA
tOHA
tOHA
DATA VALID
DOUT
PREVIOUS DATA VALID
3
4
READ CYCLE NO. 2(1,3)
t
RC
5
ADDRESS
OE
t
AA
t
OHA
6
t
HZOE
t
DOE
LZOE
ACE
t
CE
7
t
t
HZCE
t
LZCE
LB, UB
8
t
BA
t
HZB
t
LZB
HIGH-Z
D
OUT
DATA VALID
9
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. CE = VIH, OE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE HIGH transition.
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
5
IS61C3216B
ISSI®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-10
-12
-15
-20
Symbol
tWC
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max. Unit
Write Cycle Time
CE to Write End
10
9
—
—
—
12
10
10
—
—
—
15
11
11
—
—
—
20
12
12
—
—
—
ns
tSCE
ns
ns
tAW
Address Setup Time
to Write End
9
tHA
Address Hold from Write End
Address Setup Time
1
0
—
—
—
—
—
—
5
1
0
—
—
—
—
—
—
6
1
0
—
—
—
—
—
—
7
1
0
—
—
—
—
—
—
8
ns
ns
ns
ns
ns
ns
ns
ns
tSA
tPWB
tPWE
tSD
LB, UB Valid to End of Write
WE Pulse Width
9
10
8
11
10
7
12
11
8
7
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
5
6
tHD
0
0
0
0
(2)
tHZWE
—
1
—
1
—
1
—
1
(2)
tLZWE
—
—
—
—
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100%
tested.
3. The internal write time is defined by the overlap of CE HIGH and UB or LB, and WE LOW. All signals must be
in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and
Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61C3216B
ISSI®
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE Controlled)(1)
1
tWC
ADDRESS
CE
2
tHA
tSCE
3
tPWB
LB, UB
tAW
4
tPWE
WE
tSA
5
(1)
WRITE
tSD
tHD
6
D
IN
tHZWE
tLZWE
HIGH-Z
HIGH-Z
7
D
OUT
UNDEFINED
UNDEFINED
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on WE and a HIGH state
on CE inputs and at least one of the LB and UB inputs being in the LOW state.
8
9
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
7
IS61C3216B
ISSI®
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No. Package
10
12
15
20
IS61C3216B-10T Plastic TSOP (Type II)
IS61C3216B-10K 400-mil Plastic SOJ
IS61C3216B-12T Plastic TSOP (Type II)
IS61C3216B-12K 400-mil Plastic SOJ
IS61C3216B-15T Plastic TSOP (Type II)
IS61C3216B-15K 400-mil Plastic SOJ
IS61C3216B-20T Plastic TSOP (Type II)
IS61C3216B-20K 400-mil Plastic SOJ
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No. Package
12
15
20
IS61C3216B-12TI Plastic TSOP (Type II)
IS61C3216B-12KI 400-mil Plastic SOJ
IS61C3216B-15TI Plastic TSOP (Type II)
IS61C3216B-15KI 400-mil Plastic SOJ
IS61C3216B-20TI Plastic TSOP (Type II)
IS61C3216B-20KI 400-mil Plastic SOJ
ISSI®
IntegratedSiliconSolution,Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
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