ISTS832S [ETC]

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型号：	ISTS832S
厂家：	ETC
描述：
文件：	总3页 (文件大小：44K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ISTS150, ISTS832S, ISTS832SD

ISTS250, ISTS822S, ISTS822SD

TRANSMISSIVE OPTO-ELECTRONIC DUAL

CHANNEL SLOTTED INTERRUPTER

SWITCHES WITH TRANSISTOR SENSORS

24.2

Dimensions in mm

17.8

3.2

DIA 2

PLCS

11.5

5.4

11.4

11.5

2.54

2.8

7.9

7.4

7.9

7.4

10.4

10.0

10.4

10.0

OPTICAL

CENTRE

LINE

OPTICAL

CENTRE

LINE

0.45

0.40

0.45

0.40

2.8

2.54

2.8

2.54

7.62

ISTS250

ISTS822S

ISTS150

ISTS832S

ISTS822SD

ISTS832SD

DESCRIPTION

This series of photointerrupters are dual

channel switches consisting of two Gallium

Arsenide infrared emitting diodes and two NPN

silicon photo transistors mounted in a "side by

side" configuration on opposite sides of a 2.5mm

wide slot. Dual channels enable direction of

travel sensing. The transmissive housing reduces

possible interference from ambient light and

provides dust and dirt protection. In addition the

ISTS822S, ISTS832S have 0.25mm apertures in

front of the phototransistors, While the

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature

Operating Temperature

Lead Soldering Temperature

-40°C to + 85°C

-25°C to + 85°C

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current

Reverse Voltage

Power Dissipation

50mA

75mW

ISTS822SD, ISTS832SD have the same sized

apertures in front of both emitters and

phototransistors

FEATURES

OUTPUT TRANSISTOR

Single or Double apertures for High Resolution

2.5mm Gap between LED and Detector

Dual channels "side by side"

Collector-emitter Voltage BV_CEO

Emitter-collector Voltage BV_ECO

Collector Current I

30V

20mA

75mW

Power Dissipation ^C

APPLICATIONS

Copiers, Printers, Facsimilies, Record

Players, Cassette Decks, VCR's

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

ISOCOM INC

720 E., Park Boulevard, Suite 104,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: (01429) 863609 Fax :(01429) 863581

Plano, TX 75074 USA

Tel: (972) 423-5521

Fax: (972) 422-4549

24/9/97

DB92003-AAS/A1

ELECTRICAL CHARACTERISTICS ( T_A= 25°C Unless otherwise noted )

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V_F)

Reverse Voltage (V_R)

Reverse Current (I_R)

1.2

1.6

µA

I_F= 20mA

I_R= 10µA

V_R= 3V

Output

Collector-emitter Breakdown (BV

)

I_C= 1mA

( Note^C1^EO)

Emitter-collector Breakdown (BV_ECO

Collector-emitter Dark Current (I_CEO

I_E= 100µA

)

100 nA

V_CE= 10V

Coupled On-State Collector Current I_C( _ON

)

( Note 1 )

ISTS150, ISTS250

( no apertures )

250

100

µA

20mA I_F, 10V V_CE

ISTS822S, ISTS832S

(0.25mm apertures phototransistors only)

ISTS822SD, ISTS832SD

( 0.25mm apertures in front of both -

- emitters and phototransistors )

Collector-emitter Saturation VoltageV_CE(SAT)

ISTS150, ISTS250

0.4

20mA I_F, 125µA I_C

20mA I_F, 50µA I_C

ISTS822S, ISTS832S

ISTS822SD, ISTS832SD

Rise Time

Fall Time

µs

V_CC= 5V,

I_F= 20mA, R_L= 100Ω

Note 1

Special Selections are available on request. Please consult the factory.

24/9/97

DB92003-AAS/A1

Collector Power Dissipation vs. Ambient Temperature

Normalized Output Current vs.

Collector-emitter Voltage

100

I_F= 50mA

30mA

20mA

10mA

5mA

0.4

0.2

0.1

Normalized to

I_F= 20mA

V_CE= 10V

Pulsed

PW = 100µs

PRR = 100pps

0.04

0.02

0.01

T_A= 25°C

0.1

100

-25

100 125

Collector-emitter voltage V_CE( V )

Ambient temperature T_A( °C )

Forward Current vs. Ambient Temperature

Normalized Output Current vs.

Forward Current

2.0

1.8

1.6

1.4

Normalized to

T_A= 25°C

I_F= 20mA

V_CE= 0.4V

Pulsed

PW = 100µs

PRR = 100pps

1.2

1.0

0.8

0.6

0.4

0.2

-25

100 125

Forward current I_F(mA)

Ambient temperature T_A( °C )

Normalized Output Current

vs. Ambient Temperature

Collector-emitter Saturation

Voltage vs. Ambient Temperature

0.28

0.24

1.5

1.0

I_F= 20mA

V_CE= 10V

I_F= 20mA

I_C= 50µA

0.20

0.16

0.12

0.08

0.5

0.04

-25

100

-25

100

Ambient temperature T_A( °C )

DB92003AAS/A1

24/9/97

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