IXBOD1-13D [ETC]
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|1.35KV V(BO) MAX|15MA I(S) ; 单单向击穿二极管| 1.35KV V( BO ) MAX | 15MA I( S)\n型号: | IXBOD1-13D |
厂家: | ETC |
描述: | SINGLE UNIDIRECTIONAL BREAKOVER DIODE|1.35KV V(BO) MAX|15MA I(S)
|
文件: | 总8页 (文件大小:254K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Breakover Diodes
Applications
l
Transient voltage protection
High-voltage switches
Crowbar
Lasers
l
l
l
l
Pulse generators
i
IH
IBO
V
VBO
VH
Application Note H - 6
Remark: For special selection of more than 2 pieces IXBOD 1-... for every
break down voltage of VBO > 2000 V please contact us.
© 2000 IXYS All rights reserved
H - 1
IXBOD 1 -06...10
VBO = 600-1000V
IAVM = 0.9 A
Single Breakover Diode
VBO
V
Standard
Types
A
K
600 ±50
700 ±50
800 ±50
900 ±50
1000 ±50
IXBOD 1 -06
IXBOD 1 -07
IXBOD 1 -08
IXBOD 1 -09
IXBOD 1 -10
Symbol
Conditions Ratings
ID
TVJ = 125°C;
V = 0,8x VBO
20
µA
VBO
IRMS
VBO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)]
f = 50 HZ;
Tamb = 50°C
1.4
A
connection pins soldered to printed circuit
(conductor 0,035x2mm)
IAVM
ISM
I²t
0.9
200
2
A
A
tp = 0.1 ms;
tp = 0.1 ms;
Tamb = 50°C non repetitive
Tamb = 50°C
A2s
Tamb
Tstg
-40...+125
-40...+125
125
°C
°C
TVJm
°C
Dimensions in mm (1 mm = 0.0394")
KT Temperatur coefficient of VBO
KP coefficient for energy per pulse EP (material constant)
2·10-3
K-1
700
K/Ws
RthJA
- natural convection
- with air speed 2 m/s
60
45
K/W
K/W
Weight
1
g
Symbol
Conditions
Characteristic Values
IBO
TVJ
TVJ
TVJ
TVJ
=
=
=
=
25°C
25°C
25°C
50°C;
15
30
mA
mA
V
IH
VH
4 - 8
(dv/dt)C
(di/dt)C
VD = 0.67·(VBO + 100V)
> 1000
200
V/µs
A/µs
K
A
TVJ = 125°C;
TVJ = 125°C
VD = VBO ; IT = 80A; f = 50 Hz
tq(typ)
VD = 0.67·VBO ; VR = 0V
150
µs
dV/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs
VT
TVJ =125°C; IT = 5A
1.7
V
V(TO)
rT
For power-loss calculations only
TVJ = 125°C
1.1
0.12
V
Ω
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747
© 2000 IXYS All rights reserved
H - 2
IXBOD 1 -06...10
Fig. 1 Energy per pulse for trapezoidal current wafeforms
(see waveform definition).
Fig. 2 Energy per pulse for exponentially decaying
current pulse (see waveforms definition).
Va = 0 m/s
Va = 2 m/s
[V]
VT
[K/W]
ZthJA
TVJ = 125°C
TVJ = 25°C
iT [A]
t
[s]
Fig. 3 On-state voltage
Fig. 4 Transient thermal resistance.
© 2000 IXYS All rights reserved
H - 3
IXBOD 1 -12R...42R(D)
Version: RD
Breakover Diode Modules
Version: R
VBO
V
Standard
Types
BOD -
VBO
V
Standard
Types
BOD -
VBO
V
Standard
Types
BOD -
Elements
Elements
Elements
1200 ±50 IXBOD 1 -12R(D)
1300 ±50 IXBOD 1 -13R(D)
1400 ±50 IXBOD 1 -14R(D)
1500 ±50 IXBOD 1 -15R(D)
1600 ±50 IXBOD 1 -16R(D)
1700 ±50 IXBOD 1 -17R(D)
1800 ±50 IXBOD 1 -18R(D)
1900 ±50 IXBOD 1 -19R(D)
2
2
2
2
2
2
2
2
2000 ±50 IXBOD 1 -20R(D)
2100 ±50 IXBOD 1 -21R(D)
2200 ±50 IXBOD 1 -22R(D)
2300 ±50 IXBOD 1 -23R(D)
2400 ±50 IXBOD 1 -24R(D)
2500 ±50 IXBOD 1 -25R(D)
2600 ±100 IXBOD 1 -26R(D)
2800 ±100 IXBOD 1 -28R(D)
3000 ±100 IXBOD 1 -30R(D)
3200 ±100 IXBOD 1 -32R(D)
3
3
3
3
3
3
3
3
3
3
3400 ±100 IXBOD 1 -34R
3600 ±100 IXBOD 1 -36R
3800 ±100 IXBOD 1 -38R
4000 ±100 IXBOD 1 -40R
4200 ±100 IXBOD 1 -42R
4
4
4
4
4
2-3 BODs
Symbol
Test Conditions
TVJ
2 BODs
3 BODs
4 BODs
D-Version
ID
=
125°C;V = 0,8x VBO
100
100
100
100
µA
VBO
IRMS
VBO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)]
f = 50 HZ;
Tamb = 50°C
2.0
1.4
1.1
0.3
A
connection pins soldered to printed circuit
(conductor 0,035x2mm)
IAVM
ISM
I²t
1.25
200
2
0.9
200
2
0.7
200
2
0.2
50
A
A
A2s
tp = 0.1 ms; Tamb = 50°C non repetitive
tp = 0.1 ms; Tamb = 50°C
TVJ =125°C; IT = 5A
0.125
27
VT
3.4
2.2
0.24
5.1
3.3
0.36
6.8
4.4
0.48
V
V(TO)
rT
For power-loss calculations only
TVJ =125°C
17.5
3
V
Ω
Tamb
Tstg
TVJm
-40...+125
-40...+125
125
-40...+125
-40...+125
125
-40...+125
-40...+125
125
-40...+125
-40...+125
125
°C
°C
°C
K-1
KT Temperatur coefficient of VBO
2·10-3
2·10-3
2·10-3
2·10-3
KP coefficient for energy per pulse EP (material constant)
700
700
700
700
K/Ws
RthJA
- natural convection
- with air speed 2 m/s
20
16
20
16
20
16
20
16
K/W
K/W
Weight
typical
14
14
14
14
g
Symbol
IBO
Test Conditions Characteristic Values both Versions R & RD 2 BODs
3 BODs
15
4 BODs
15
TVJ
TVJ
TVJ
TVJ
=
=
=
=
25°C
25°C
25°C
15
30
mA
mA
V
IH
30
30
VH
4 - 8
4 - 8
4 - 8
(dv/dt)C
50°C;
VD = 0.67·(VBO + 100V)
- VBO
bis 1500V
> 1000
> 1500
-
-
-
-
-
-
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
- VBO 1600 - 2000V
- VBO 2100 - 2500V
- VBO 2600 - 3000V
- VBO 3200 - 3400V
- VBO 3600 - 4200V
-
-
-
-
> 2000
> 2500
-
-
> 3000
> 3500
(di/dt)C
tq(typ)
TVJ = 125°C;
VD = VBO ; IT = 80A; f = 50 Hz
200
150
200
150
200
150
A/µs
µs
TVJ = 125°C
VD = 0.67·VBO ; VR = 0V
dv/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747
© 2000 IXYS All rights reserved
H - 4
IXBOD 1 -12R...42R(D)
A
K
A
K
Dimensions in mm (1 mm = 0.0394")
Fig. 5 Energy per pulse for single BOD element
for trapezoidal wave current. EP must be multiplied
by number of elements for total energy.
Fig. 6 Energy per pulse for single BOD element
for exponentially decaying current pulse. EP must
be multiplied by number of elements for total
energy.
n = number of BOD-Elements in series
[V]
VT
[K/W]
ZthJA
Va = 0 m/s
Va = 2 m/s
t
[s]
iT [A]
Fig. 7 On-state voltage at TVJ = 125°C.
Fig. 8 Transient thermal resistance.
© 2000 IXYS All rights reserved
H - 5
Application
i
Protection of thyristors against overvoltages in forward
direction.
Thyristor
BOD
VBO (TVJ) = VBO, 25°C [1+KT(TVJ - 25°C)]
VD
Calculation example
a. The maximum junction temperature shall be
calculated for a module IXBOD 1 -30R at an
ambient temperature Ta = 60 °C, an exponentially
decaying current ITM = 40A, a pulsewidth tp = 2 µs,
an operating frequency f = 50 Hz and natural
convection. From the diagram Fig. 6 the energy per
pulse is obtained:
b. If following these steady-state conditions an
overload for 1 minute occurs with ITM= 60 A and a
pulse-width tp = 4 µs at the same operating
frequency f = 50 Hz, then the resulting maximum
junction temperature is calculating as follows:
TVJmax2 = TVJmax1 + (Ep2-Ep1) • n • f •ZthJA(t) + Kp • (Ep2-Ep1)
The diagrams Fig. 11 and Fig. 8 show
Ep1 = 6 x 10-3 Ws
For a module IXBOD1-30R the number of single
IXBOD elements is:
Ep2= 14x10-3 Ws
n = 3
ZthJA(t = 1min) = 12K/W
At natural air cooling the thermal resistance junction
to ambient amounts to (Fig.8):
From what follows:
RthJA = 20K/W
TVJmax2 = 82.2 + 14.4 + 5,6 = 102.2 °C
and the unknown temperature can be calculated as:
TVJmax1 = Ta + n • f • Ep • RthJA + Kp • Ep
TVJmax1 = 60 + 18 + 4.2 = 82.2°C
which is allowed because the maximum admissible
junction temperature TVJM = 125 °C.
© 2000 IXYS All rights reserved
H - 6
Example of a circuit
A simple emergency triggering circuit.
R1
R3
T
: Thyristor
R1
D1
D3
D4
: Current limiting resistance (0 - 200 Ω)
: Series-diode (fast recovery diode)
: Protection diode
D1
T
IXBOD
: Zener diode, typical VZ : 3-6 V
z
R2, C2 : Protection against parasitic triggering;
recommended values:
D4 D3
C2
C3
R2 : 100 - 1000 Ω
C2 : 22 - 47 nF
R2
R3, C3 : Snubber network of the thyristor
Notice
40
A
1. A IXBOD element has a maximum reverse
blocking voltage of 10V.
IR
20
2. For higher reverse voltages a fast, soft recovery
diode must be connected in series (Fig. 9).
This diode must fulfill the conditions of Fig. 10.
10
8
6
4
i
IR
2
1
t
tB
0,1
µs
1
2
3
5 7 10
Fast recovery
diode
IXBOD single
or
tB
IXBOD module
Fig. 10 Maximum peak value of the
reverse current admissible for a given
pulse-width tB, which is required for the
suitable fast recovery series-diode.
Fig. 9 IXBOD protection by a fast recovery
diode.
© 2000 IXYS All rights reserved
H - 7
© 2000 IXYS All rights reserved
H - 8
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