IXTH24N50MB [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247(5) ; 晶体管| MOSFET | N沟道| 500V V( BR ) DSS | 24A I( D) | TO- 247 ( 5 )\n
IXTH24N50MB
型号: IXTH24N50MB
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247(5)
晶体管| MOSFET | N沟道| 500V V( BR ) DSS | 24A I( D) | TO- 247 ( 5 )\n

晶体 晶体管
文件: 总8页 (文件大小:710K)
下载:  下载PDF数据表文档文件

IXTH24N50Q

Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3

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0 IXYS

IXTH24N65X2

Power Field-Effect Transistor,

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0 LITTELFUSE

IXTH24N65X2

Power Field-Effect Transistor

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1 IXYS

IXTH24P20

Standard Power MOSFET

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69 IXYS

IXTH24P20

Standard Power MOSFET

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20 IXYS

IXTH24P20

Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

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1 IXYS

IXTH250N075T

N-Channel Enhancement Mode Avalanche Rated

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23 IXYS

IXTH260N055T2

TrenchT2TM Power MOSFET

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38 IXYS

IXTH26N45

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 26A I(D) | TO-218VAR

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35 ETC

IXTH26N45

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTH26N50

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 26A I(D) | TO-218VAR

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48 ETC

IXTH26N50

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTH26N60P

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 IXYS

IXTH26N60P

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 LITTELFUSE

IXTH26P20P

P-Channel Enhancement Mode Avalanche Rated

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37 IXYS