JANS2N3506 [ETC]
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5 ; 晶体管| BJT | NPN | 40V V（ BR ） CEO | 3A I（C ） | TO- 5\n
| 型号： | JANS2N3506 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5
|
| 文件： | 总14页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by
INCH-POUND
MIL-PRF-19500/349E
28 August 2000
SUPERSEDING
28 November 2000.
MIL-PRF-19500/349D
12 December 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to T0-39).
1.3 Maximum ratings. (1)
PT (2)
PT (3)
VCBO
VCEO
VEBO
IC
TJ and
TSTG
RqJA
TA = +25°C
TC = +25°C
2N3506
2N3507
2N3506
2N3507
2N3506A
V dc
2N3507A
2N3506A
2N3507A
W
W
V dc
80
V dc
40
V dc
50
V dc
5.0
A dc
3.0
°C
-65 to
+200
°C/W
1.0
5.0
175
60
(1) Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non "L" suffix devices unless
otherwise noted.
(2) Derate linearly 5.71 mW/°C above TA = +25°C.
(3) Derate linearly 28.6 mW/°C above TC = +25°C.
1.4 Primary electrical characteristics. (1)
hFE2 (2)
hFE4 (2)
VCE(sat)
|hfe|
Cobo
ton
toff
Limits
VCE = 2.0 V dc
IC = 1.5 A dc
VCE = 5.0 V dc
IC = 3.0 A dc
IC = 1.5 A dc
IB = 150 mA dc
f = 20 Mhz
VCE = 5 V dc
IC = 100 mA dc
VCB = 10 V dc
IE = 0
100 kHz £ f
£ 1 MHz
IC = 1.5 A dc
IB = 150 mA dc
2N3506
2N3507
2N3506
2N3507
2N3506A 2N3507A 2N3506A 2N3507A
V dc
1.0
pF
40
ns
45
ns
90
Min
Max
40
200
30
150
25
20
3
15
(1) Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non "L" suffix devices unless
otherwise noted.
(2) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving
this document should be addressed to: (Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/349E
Dimensions
Millimeters
7.75
Symbol
CD
CH
HD
LC
LD
LL
Inches
0.305 0.335
Notes
8.51
6.60
9.40
0.240
0.335
0.260
0.370
6.10
8.51
.200 TP
5.08 TP
6
0.016
0.016
0.021
0.41
0.41
0.53
7, 8
See notes
7, 8, 11,12
LU
L1
0.019
0.050
0.48
1.27
7, 8
7, 8
7, 8
5
L2
0.250
0.100
6.35
2.54
P
Q
0.050
0.010
0.045
0.034
1.27
0.25
1.14
0.86
4
r
10
3
TL
TW
a
0.029
0.028
0.74
0.71
2
45/ TP
45/ TP
6
NOTES:
1.
2.
3.
4.
5.
6.
Dimension are in inches.
Metric equivalents are given for general information only.
Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
7.
8.
9.
10. Dimension r (radius) applies to both inside corners of tab.
11. For 2N3506L, 2N3507L, 2N3506AL, and 2N3507AL, dimension LL shall be 1.5 inches (38.1) mm minimum
and 1.75 inches (44.4 mm) maximum.
12. For 2N3506, 2N3506A, 2N3507, and 2N3507A dimension LL shall be 0.5 inches (12.7) mm minimum and
0.75 inches (19.0 mm) maximum.
13. In accordance with ANSI Y14.5M, diameters are equivalent to f x symbology.
14. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (similar to TO-39).
2
MIL-PRF-19500/349E
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards and handbooks. The following specifications, standards, and handbooks form a part
of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those
listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement
thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-
5094.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein the text of this specification shall take precedence. Nothing in this specification, however, shall supersede
applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying
activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified
in MIL-PRF-19500.
3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as
specified in MIL-PRF-19500, and figure 1 (similar to T0-39).
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3.
3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall
be free from other defects that will affect life, serviceability, or appearance.
3
MIL-PRF-19500/349E
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The
following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein
shall not be acceptable.
Screen (see table IV
Measurement
of MIL-PRF-19500)
JANS level
Thermal impedance (see 4.3.2)
hermetic seal (optional)
JANTX and JANTXV levels
Thermal impedance (see 4.3.2)
(1)
3c
7
9
Not applicable
ICEX1
48 hours minimum
ICEX1; hFE2
, hFE2
10
11
48 hours minimum
ICEX1 and hFE2
;
DICEX1 = 100 percent of initial value or 200 nA dc,
whichever is greater;
DhFE2 = 15 percent of initial value
12
13
See 4.3.1
240 hours minimum
Subgroups 2 and 3 of table I herein;
DICEX1 = 100 percent of initial value or 200 nA dc,
whichever is greater;
See 4.3.1
80 hours minimum
Subgroup 2 of table I herein;
DICEX1 = 100 percent of initial value or 200 nA
dc, whichever is greater;
DhFE2 = 15 percent of initial value.
DhFE2 = 15 percent of initial value.
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-30 V dc; Power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 % of maximum rated PT (see 1.3).
NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4
MIL-PRF-19500/349E
4.3.2 Thermal impedance (ZqJX measurements). The ZqJX measurements shall be performed in accordance with
MIL-STD-750, Method 3131.
a. IM measurement current...................10 mA.
b. IH forward heating current ................500 mA (min).
c. tH heating time ..................................25 - 30 ms.
d. tmd measurement delay time............60 ms max.
e. VCE collector-emitter voltage ...........10 V dc minimum
The maximum limit for ZqJX under these test conditions are ZqJX (max) = 17.5°C/W.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified
herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. See 4.4.2.2 for JAN, JANTX, and JANTXV group
B testing. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method Condition
2037 Test condition A
1037 VCB = 10 V dc
B3
B4
B5
1027 VCB = 10 V dc; TA = +125°C ± 25°C for 96 hours adjusted as required according to the
chosen TA to give a TJ = +275°C minimum. Optionally, the test may be conducted for
minimum 216 hours with PT adjusted to achieve TJ = 225°C minimum, sample size (for
option) = 45, c = 0. In this case, the ambient temperature shall be adjusted such that a
minimum 100% of maximum rated PT (see 1.3) is applied to the device under test.
(Note: If a failure occurs, resubmission shall be at the test conditions of the original sample.)
B6
3131 See 4.5.2
5
MIL-PRF-19500/349E
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or
from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot
shall be scrapped.
Step
1
Method Condition
1039
1039
HTRB, test condition A, TA = 150°C, VCB = 80 percent of para 1.3 rated, 340 hours, n = 22
devices, c = 0.
2
Steady-state life: Test condition B, 1,000 hours, VCB = 10 -30 V dc, Power shall be applied to
achieve TJ = 150°C minimum and a minimum power dissipation PD = 75% of PT maximum
rated as defined in 1.3 herein.
or
n= 45 devices, Acc = 0
1037
Intermittent operation life: VCB = 10 V dc , 6,000 cycles, DTJ ³ +100°C; forced air cooling
allowed on cooling cycle only. n = 45 devices, c = 0.
3
4
2037
1032
Bond strength, test condition A, n = 11 wires, c = 0.
High-Temperature life (non-operating), TA = +200°C n = 22, c = 0
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. Samples shall be selected from each wafer from a die fabrication line that the manufacturer chooses to "certify"
for the die design used in products manufactured to this specification.
b. Must be chosen from an inspection lot that has been submitted to and passed group A conformance
inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the
samples for life test (subgroups B3 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be
pulled prior to the application of final lead finish.
4.4.2.4 Product acceptable for delivery. The product shall be acceptable for delivery only after the successful
completion of all group B testing and shall be comprised of die meeting the following requirements:
a. Manufactured on the same certified die fabrication line as the sample selected for 4.4.2.3.
b. The die lot was manufactured (using start or completion dates, as the manufacturer selects to consistently
use) within three months following the wafer lot used for sample selection in 4.4.2.3. Group B shall not be
required more than once for any single wafer lot.
6
MIL-PRF-19500/349E
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV) herein
for group C testing. Electrical measurements (end points) and delta requirements shall be in accordance with group A,
subgroup 2 herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method Condition
C2
C6
2036
1026
Test condition E.
Conditions: 1,000 hours at VCB = 10 - 30 V dc; Power shall be applied to achieve TJ = 150°C
minimum and a minimum power dissipation PD = 75% of PT maximum rated as defined in 1.3
herein.
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
C2
C6
2036
Test condition E.
Not Applicable
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection
lot containing the intended package type and lead finish procured to the same specification which is submitted to and
passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
4.4.3.4 Product acceptable for delivery. The product which may be accepted for delivery based a successful
completion of group C testing shall be product of the particular package type with lot inspection identification codes of
the 52 successive weeks beginning with the inspection lot identification code of the successful group C sample (i.e. the
inspection lot identification codes accepted for delivery based on successful group C testing will include those sealed
during the approximate 10 weeks during which the sample was being screened and tested plus those sealed in the 42
weeks following successful completion of group C testing making a total of 52 successive calendar weeks.) A
manufacturer shall not accept product for delivery until after successful completion of the group C testing on product of
the applicable package type with an inspection lot identification code less than 51 weeks prior to the inspection
identification code of the product being considered for acceptance.
7
MIL-PRF-19500/349E
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of
MIL-STD-750. The following details shall apply:
a. Minimum collector current magnitude during power application shall be 160 mA dc for RqJC and 32 mA dc
for RqJA
.
b. Collector to base voltage magnitude shall be 10 V dc.
c. Reference temperature measuring point shall be the case for RqJC and ambient air for RqJA
.
d. Reference point temperature shall be selected with 25° £ TR £ 35°C and recorded before test is started.
e. Mounting arrangement shall be with heat sink to case for RqJC and without heat sink for RqJA
.
f. Maximum limits shall be RqJC = 35°C/W and RqJA = 175°C/W.
NOTE:
Unless otherwise specified by the acquiring activity, the choice for measuring RqJC or
qJA will satisfy the requirements of this test.
R
8
MIL-PRF-19500/349E
TABLE I. Group A inspection .
Inspection
1/, 2/
MIL-STD-750
Conditions
Limit
Unit
Symbol
Method
2071
Min
Max
Subgroup 1 3/
Visual and mechanical 4/
examination
n = 45 devices, c = 0
Solderability 4/, 6/
2026
1022
n = 15 leads, c = 0
Resistance to solvents
4/, 5/, 6/
n = 15 devices, c = 0
Temp Cycling 4/, 6/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic Seal 6/
Fine leak
n = 22 devices, c = 0
Gross leak
Electrical measurements 6/
Bond strength 4/, 6/
Group A, subgroup 2
2037
3001
Precondition TA = +250°C at t = 24
hrs or TA = 300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Breakdown voltage collector
V(BR)CBO
Bias condition D, IC = 100 mA dc
Bias condition D, IE = 10 mA dc
to base
2N3506
2N3507
60
80
V dc
V dc
Breakdown voltage emitter to
base
3026
3011
V(BR)EBO
5
V dc
Breakdown voltage collector
to emitter
Bias condition D, IC = 10 mA dc,
pulsed (see 4.5.1)
V(BR)CEO
2N3506
2N3507
40
50
V dc
V dc
Collector to emitter cutoff
current
2N3506
3041
3076
3076
Bias condition A, VEB = 4 V dc
ICEX1
hFE1
hFE2
1
mA dc
VCE = 40 V dc
VCE = 60 V dc
2N3507
Forward-current transfer ratio
VCE = 1 V dc, IC = 500 mA dc,
pulsed (see 4.5.1)
2N3506
2N3507
50
35
250
175
Forward-current transfer ratio
VCE = 2 V dc, IC = 1.5 A dc, pulsed
(see 4.5.1)
2N3506
2N3507
40
30
200
150
See footnotes at end of table.
9
MIL-PRF-19500/349E
TABLE I. Group A inspection .
Inspection
1/, 2/
MIL-STD-750
Conditions
Limit
Unit
Symbol
hFE3
Method
3076
Min
Max
Subgroup 2 - Continued
Forward-current transfer ratio
VCE = 3 V dc, IC = 2.5 A dc, pulsed (see
4.5.1)
2N3506
2N3507
30
25
Forward-current transfer ratio
3076
VCE = 5 V dc, IC = 3.0 A dc, pulsed (see
4.5.1)
hFE4
2N3506
2N3507
25
20
Saturation voltage and
resistance
3071
3071
3071
3066
3066
3066
IC = 500 mA dc, IB = 50 mA dc, pulsed (see
4.5.1)
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
VBE(sat)3
0.5
1.0
1.5
1.0
1.3
2.0
V dc
V dc
V dc
V dc
V dc
V dc
Saturation voltage and
resistance
IC = 1.5 A dc, IB = 150 mA dc, pulsed (see
4.5.1)
Saturation voltage and
resistance
IC = 2.5 A dc, IB = 250 mA dc, pulsed (see
4.5.1)
Base to emitter saturated
voltage
Test condition A, IC = 500 mA dc, IB = 50
mA dc, pulsed (see 4.5.1)
Base to emitter saturated
voltage
Test condition A, IC = 1.5 A dc, IB = 150 mA
dc, pulsed (see 4.5.1)
0.8
Base to emitter saturated
voltage
Test condition A, IC = 2.5 A dc, IB = 250 mA
dc, pulsed (see 4.5.1)
Subgroup 3
High-temperature operation
TA = +150°C
Collector to emitter cutoff
current
2N3506
3041
3076
Bias condition A, VEB = 4 V dc
ICEX2
1.5
mA dc
VCE = 40 V dc
VCE = 60 V dc
2N3507
Low-temperature operation
TA = -55°C
Forward-current transfer ratio
2N3506, 2N3506L
2N3507, 2N3507L
2N3506A, 2N3506AL
2N3507A, 2N3507AL
IC = 500 mA dc, pulsed (see 4.5.1)
VCE = 1.0 V dc
VCE = 1.0 V dc
VCE = 2.0 V dc
VCE = 2.0 V dc
hFE5
25
17
25
17
See footnote at end of table.
10
MIL-PRF-19500/349E
TABLE I. Group A inspection .
Inspection
1/, 2/
MIL-STD-750
Conditions
Limit
Unit
Symbol
Method
3206
Min
3
Max
15
Subgroup 4
Small-signal short- circuit
forward-current transfer ratio
VCE = 5 V dc, IC = 100 mA dc, f = 20 MHz
|hfe|
Cobo
Cibo
Open circuit output capacitance
3236
VCB = 10 V dc, IE = 0,
100 kHz £ f £ 1 MHz
40
pF
pF
Input capacitance (output open-
circuited)
3240
VEB = 3 V dc, IC = 0,
100 kHz £ f £ 1 MHz
300
Pulse response:
Delay time
3251
3251
3251
3251
Test condition A, IC = 1.5 A dc,
IB1 = 150 mA dc, (see figure 3)
td
tr
15
30
55
35
ns
ns
ns
ns
Rise time
Storage time
Fall time
Test condition A, IC = 1.5 A dc,
IB1 = 150 mA dc, (see figure 3)
Test condition A, IC = 1.5 A dc,
IB1 = IB2 = 150 mA dc, (see figure 4)
tS
Test condition A, IC = 1.5 A dc,
tf
IB1 = IB2 = 150 mA dc,(see figure 4)
1/ For sampling plan see MIL-PRF-19500.
2/ Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non suffix devices unless otherwise
noted.
3/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
4/ Separate samples may be used.
5/ Not required for laser marked devices.
6/ Not required for JANS devices.
11
MIL-PRF-19500/349E
FIGURE 3. Equivalent circuit for measuring delay and rise times.
10 £ PW £ 500ms
FIGURE 4. Equivalent circuit for measuring storage and fall times.
12
MIL-PRF-19500/349E
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact
the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or
within the Military Department's System Command. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Lead finish as specified (see 3.3.1).
b. Type designation and product assurance level.
6.3 Substitution information. The 2N3506A and 2N3507A may be substituted for the 2N3506 and 2N3507 (and L
suffix versions) (respectively) at the discretion of the procuring activity."
6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to
the previous issue due to the extensiveness of the changes.
6.5 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at
the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products
have actually been so listed by that date. The attention of the contractors is called to these requirements, and
manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for
qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this
specification. Information pertaining to qualification of products may be obtained from Defense Supply Center,
Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, Ohio, 43216-5000.
Custodians:
Army - CR
Navy - EC
Preparing activity:
DLA - CC
Air Force - 11
NASA - NA
(Project 5961-2308)
Review activities:
Army - AR, AV, MI
Navy - AS, CG, MC
Air Force - 13, 19
13
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current
contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/349E
2. DOCUMENT DATE
28 August 2000
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3506,
2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, JAN, JANTX, JANTXV, AND JANS
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan_barone@dscc.dla.mil
c. ADDRESS
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Defense Supply Center Columbus, ATTN:
DSCC-VAC, 3990 East Broad Street,
Columbus, OH 43213-1199
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
相关型号：
JANS2N3635UB
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
MICROSEMI
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