JANTX2N1711S_技术文档

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 25 September 1999.

INCH-POUND

MIL-PRF-19500/225F

25 June 1999

SUPERSEDING

MIL-S-19500/225E

15 April 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,

TYPES 2N1711, 2N1711S, 2N1890, 2N1890S,

JAN AND JANTX

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Two levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See 3.3 (similar to TO-5).

1.3 Maximum ratings.

Type

1/

P

2/

P

3/

V

CBO

V

EBO

I

C

V

T and T

J STG

T

CER

T

= +25°C

T

= +25°C

R

= 10 W

BE

C

A

W

V dc

mA dc

V dc

°C

2N1711

2N1890

3.0

0.8

75

100

7

500

50

80

-65 to +200

1/ Also applies to the corresponding "S" suffix device.

2/ Derate linearly at 17.2 mW/°C for T > +25°C.

C

3/ Derate linearly at 4.57 mW/°C for T > +25°C.

A

1.4 Primary electrical characteristics.

Limits

h

FE1

1/

h

FE2

1/

|h |

fe

V

CE(SAT)

f = 20 MHz

2N1711 2/

2N1890 2/

= 50 mA dc

C

V

= 10 V dc

V

= 10 V dc

CE

V

I

= 10 V dc

I

= 150 mA dc

= 50 mA dc

V dc

I

CE

I

C

= 10 mA dc

I

C

= 150 mA dc

C

= 50 mA dc

I

= 5.0 mA dc

V dc

C

B

Min

Max

20

100

300

3.5

12

0.2

1.5

0.2

1.2

1/ Pulsed (see 4.5.1).

2/ Also applies to the corresponding "S" suffix device.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

MIL-PRF-19500/225F

Dimensions

Millimeters

Symbol

Inches

Note

Min

Max

.335

.260

.370

Min

7.75

6.10

8.51

Max

8.51

6.60

9.40

CD

CH

HD

LC

LD

LL

LU

L1

L2

Q

.305

.240

.335

.200 TP

5.08 TP

6

7,8

.016

.021

0.41

0.53

see notes 7, 8, 13

.016

---

.250

---

.029

.028

---

.019

.050

---

.050

.045

.034

.010

0.41

---

6.35

---

0.74

0.71

---

0.48

1.27

---

1.27

1.14

0.86

0.25

7,8

5

3,4

3

TL

TW

r

10

6

a

45° TP

NOTES:

1. Dimension are in inches.

2. Metric equivalents are given for general information only.

3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall

be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition

(MMC) relative to tab at MMC. The device may be measured by direct methods or by the

gauge and gauging procedure shown in figure 2.

7. Dimension LU applies between L and L . Dimension LD applies between L and LL

1

2

minimum. Diameter is uncontrolled in L and beyond LL minimum.

1

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. In accordance with ANSI Y14.5M, diameters are equivalent to f x symbology.

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector (case).

13. For 2N1711S and 2N1890S, dimension LL = .5 inches (12.70 mm) min. and .75 inches (19.05 mm) max.

For 2N1711 and 2N1890, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.

FIGURE 1. Physical dimensions (similar to TO-5).

2

MIL-PRF-19500/225F

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include

documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has

been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements

documents cited in sections 3 and 4 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document

to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department

of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500

STANDARD

MILITARY

MIL-STD-750

- Semiconductor Devices, General Specification for.

-

Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for

related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,

however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.

3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MIL-

PRF-19500.

3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in

MIL-PRF-19500, MIL-HDBK-6100, and herein.

3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750 and MIL-PRF-19500.

3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, the country of origin may be

omitted from the body of the transistor.

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as

specified in 1.3, 1.4, and table I.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I.

3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing

on the applicable qualified products list before contract award (see 4.2 and 6.4).

3

MIL-PRF-19500/225F

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3)

c. Conformance inspection (see 4.4).

4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as specified herein.

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

4.3 Screening (JANTX level). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The

following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be

acceptable.

|

| Screen (see

| table IV of

| MIL-PRF-19500)

|

Measurement

JANTX level only

1/

| Thermal impedance (see 4.3.2)

|

| Not applicable

|

9

|

11

12

| h

|

; I

|

FE2 CBO1

| See 4.3.1

|

13

| DI

= 100 percent of initial value

|

CBO1

|

or 5 nA dc; whichever is greater;

|

| Dh

|

= ±15 percent of initial value;

|

FE2

1/ Thermal impedance shall be performed anytime after sealing

provided temperature cycling is performed in accordance with

MIL-PRF-19500, screen 3 prior to this thermal test.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:

= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5).

T

A

P = 800 mW;

T

2N1711, 2N1711S: V

2N1890, 2N1890S: V

= 24 V dc.

= 48 V dc.

CB

NOTE: No heat sink or forced air cooling of the devices shall be permitted.

4

MIL-PRF-19500/225F

4.3.2 Thermal impedance Z

qJX

measurements (for qualification only). The Z

measurements shall be performed in accordance

qJX

with MIL-STD-750, method 3131.

a). I measurement current.......................................................................................10 mA.

M

b). I forward heating current....................................................................................50 mA minimum.

H

c). t heating time......................................................................................................10 ms.

H

d). t

measurement delay time...............................................................................100 ms minimum.

MD

e). V

CE

collector - emitter voltage..............................................................................10 V dc.

The maximum limit for Z

under these test conditions is Z (max) = 58°C/W.

qJX

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. The

test conditions for Z

shall be those used in 4.3.2.

qJX

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VIb (JANTX) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2

herein.

Subgroup Method

B3 1027

Condition

T

= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5);

A

T = 150°C min; V = 24 V dc for 2N1711 and 2N1711S; V

= 48 V dc for 2N1890

J

CB

and 2N1890S.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup

2 herein.

Subgroup

C2

Method

2036

Condition

Lead fatigue: Test condition E.

C6

1026

T = room ambient as defined in the general requirements of MIL-STD-750 (see 4.5).

A

T = 150°C min; V = 24 V dc for 2N1711 and 2N1711S; V

= 48 V dc for 2N1890 and

J

CB

2N1890S.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table IX of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein.

Subgroup

E1

Method

1051

Condition

Condition C, 500 cycles; 22 devices, c = 0.

E1

1071

E2

E3

E4

E5

1038

----

80 to 85 percent of rated V

, T = 150°C, t = 1,000 hours

CBO A

Not applicable.

3131

----

See 4.5.2, 22 devices, c = 0.

Not applicable.

4.5 Method of inspection. Methods of inspection shall be as specified in appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750.

5

MIL-PRF-19500/225F

TABLE I. Group A inspection.

|

Inspection 1/

Subgroup 1

MIL-STD-750

Conditions

| Symbol

Limits

|

| Max

| Unit

|

| Method

|

| Min

|

|Visual and mechanical

| inspection

|

| 2071

|

Subgroup 2

|Thermal impedance 2/

|

| 3131

|

|See 4.4.1

|

|Z

|

| 58

|

|°C/W

|

QJX

|Breakdown voltage

| 3001

|Bias condition D,

|V

(BR)CBO

|

| collector to base

|

| 2N1711, 2N1711S

| 2N1890, 2N1890S

|

|I = 100 mA dc

|

C

|

| 75

| 100

|

| V dc

|

|Breakdown voltage

| 3026

|Bias condition D,

|V

(BR)EBO

|

7

|

| V dc

|

| emitter to base

|

|I = 100 mA dc

|

E

|Breakdown voltage

| collector to emitter

|

| 2N1711, 2N1711S

| 2N1890, 2N1890S

|

| 3011

|Bias condition D, I = 30 mA dc,

C

|pulsed (see 4.5.1)

|

|V

|

(BR)CEO

|

| 30

| 60

|

| V dc

|

|Breakdown voltage

| 3011

|Bias condition D, I = 100 mA dc,

|V

(BR)CER

|

C

| collector to emitter

|

| 2N1711, 2N1711S

| 2N1890, 2N1890S

|

|pulsed (see 4.5.1), R

= 10 W

|

BE

|

| 50

| 80

|

| V dc

|

|Collector to base

| cutoff current

|

| 3036

|

|Bias condition D

|

|I

|

CBO1

| 2N1711, 2N1711S

|

|V

= 60 V dc

= 80 V dc

|

| 10

| nA dc

|

CB

| 2N1890, 2N1890S

|

|V

|

| 10

|

| nA dc

|

CB

|Emitter to base

| 3061

|Bias condition D,

|I

EBO

|

| 5.0

| nA dc

|

| cutoff current

|

|V

|

= 5 V dc

|

EB

|Collector to emitter

| 3071

|I = 150 mA dc,

C

|V

CE(sat)1

|

| saturated voltage

|

| 2N1711, 2N1711S

| 2N1890, 2N1890S

|

|I = 15 mA dc, pulsed (see 4.5.1)

B

|

| 1.5

| 5.0

|

| V dc

|

|Collector to emitter

| 3071

|I = 50 mA dc,

C

|V

CE(sat)2

|

| saturated voltage

|

| 2N1890, 2N1890S

|

|I = 5 mA dc, pulsed (see 4.5.1)

B

|

| 1.2

|

| V dc

|

|Base emitter

| 3066

|

|Test condition A, I = 150 mA dc,

|V

|

| 1.3

|

| V dc

|

C

BE(sat)1

| saturated voltage

|I = 15 mA dc, pulsed (see 4.5.1)

B

See footnotes at end of table.

6

MIL-PRF-19500/225F

TABLE I. Group A inspection - Continued.

|

Inspection 1/

MIL-STD-750

| Symbol

Limits

|

| Unit

|

| Method

Conditions

| Min

| Max

|

Subgroup 2

- Continued

|Base emitter

| 3066

|

|Test condition A,

|I = 50 mA dc,

|V

|

BE(sat)2

| saturated voltage

C

|

|I = 5 mA dc, pulsed (see 4.5.1)

B

|

| 2N1890, 2N1890S

|

| 0.9

|

| V dc

|

|Forward-current

| transfer ratio

|

| 3076

|

|V

= 10 V dc, I = 10 mA dc,

|h

|

| 20

|

CE

C

FE1

FE2

FE3

|pulsed (see 4.5.1)

|

|Forward-current

| transfer ratio

|

| 3076

|

|V

CE

= 10 V dc, I = 150 mA dc,

|h

|

|100

|

| 300

|

C

|pulsed (see 4.5.1)

|

|Forward-current

| transfer ratio

|

| 2N1711, 2N1711S

|

| 3076

|V = 10 V dc, I = 500 mA dc,

|h

|

CE

C

|

|pulsed (see 4.5.1)

|

| 50

|

Subgroup 3

|

|High temperature

| operation:

|

|T = +150°C

|

A

| Collector to base

| 3036

|

|Bias condition D

|

|I

|

CBO2

|

cutoff current

| 2N1711, 2N1711S

|

|V

= 60 V dc

= 80 V dc

|

| 10

| mA dc

|

CB

| 2N1890, 2N1890S

|

|V

|

| 15

|

| mA dc

|

CB

|Low temperature

| operation:

|

|T = -55°C

|

A

| Forward-current

| 3076

|V

CE

= 10 V dc,

|h

FE1

| 35

|

transfer ratio

|

|I = 10 mA dc, pulsed (see 4.5.1)

C

|

Subgroup 4

|Small-signal short-

| 3206

|V

CE

= 5 V dc,

|h

fe

| 80

| 200

|

| circuit forward-

| current transfer

|

|I = 1 mA dc

C

|

| ratio

|

|V

CE

= 10 V dc,

|h

fe

| 90

| 270

|

|I = 5 mA dc

C

|

|Magnitude of common

| emitter small-signal

| short-circuit

| forward-current

| transfer ratio

| 3306

|V

= 10 V dc, I = 50 mA dc,

||h |

fe

| 3.5

| 12

|

CE

C

|

|f = 20 MHz

|

See footnotes at end of table.

7

MIL-PRF-19500/225F

TABLE I. Group A inspection - Continued.

|

Inspection 1/

MIL-STD-750

| Symbol

Limits

|

| Unit

|

| Method

Conditions

| Min

| Max

|

Subgroup 4

- Continued

|Small-signal short-

| circuit input

| impedance

|

| 3201

|V

= 10 V dc, I = 5 mA dc

|h

|

| 4

|

8

| W

|

CB

C

ib

|

|Small-signal short-

| circuit output

| admittance

|

| 2N1711, 2N1711S

| 2N1890, 2N1890S

|

| 3216

|V

= 10 V dc, I = 5 mA dc

|h

|

CB

C

ob

|

| 0.0

|

1.0

0.3

| mmhos

|

|Small-signal open-

| circuit reverse-

| voltage transfer

| ratio

| 3211

|V

|

= 10 V dc, I = 5 mA dc

|h

|

CB

C

rb

|

| 2N1711, 2N1711S

| 2N1890, 2N1890S

|

|5x10^-4| mmhos

|1.5 x

| mmhos

|

|10^-4

|Open circuit output

| capacitance

|

| 2N1711, 2N1711S

| 2N1890, 2N1890S

|

| 3236

|V

= 10 V dc, I = 0,

|C

|

CB

E

obo

|

|100 kHz £ f £ 1 MHz

|

| 8

| 5

|

| 25

| 15

|

| pF

|

|Pulse response

|

|Subgroups 5, 6, and 7

|

|Not applicable

| 3251

|Test condition A, except test

| circuit and pulse requirements

| See figure 2 herein.

|

|t + t

on

|

| 30

| ns

|

off

|

1/ For sampling plan, see MIL-PRF-19500.

2/ Need not be performed in screen 13.

8

MIL-PRF-19500/225F

NOTES:

1. The rise time (T ) of the applied pulse shall be

r

2.0 £ ns, duty cycle £ 2 percent, and the generator source impedance shall be

50 W.

2. Sampling oscilloscope: Z ³ 100 kW, C £ 12 pF, rise time £ 2 ns.

in

FIGURE 2. Pulse response (turn-on plus turn-off) measurement circuit and waveforms.

9

MIL-PRF-19500/225F

4.5.2 Thermal resistance (qualification only). Thermal resistance measurements shall be conducted in accordance with method 3131

of MIL-STD-750. The following details shall apply:

a. Collector current magnitude during power applications shall be 30 mA dc (2N1711 and 2N1711S), and 50 mA dc (2N1890

and 2N1890S).

b. Collector to emitter voltage magnitude ³ 20 V dc.

c. Reference temperature measuring point shall be the case.

d. Reference point temperature shall be 25°C £ T £ 75°C and recorded before the test is started.

R

e. Mounting arrangement shall be with heat sink to case.

f.

t measurement delay time = 100 ms

md

g.

I

M

measurement current = 10 mA

h. Maximum limit shall be R

= 58°C /W.

QJC

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When

actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to

ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity

within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is

available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting

the responsible packaging activity.

5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see

2.2.1).

b. Lead finish (see 3.3.1).

c. Type designation and product assurance level.

d. Packaging requirements (see 5.1).

6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous

issue due to the extent of the changes.

6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of

award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually been so

listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the

products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded

contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be

obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.

CONCLUDING MATERIAL

Custodians:

Navy - EC

Preparing activity:

DLA - CC

Army - CR

Air Force - 11

NASA - NA

DLA - CC

(Project 5961-1921)

Review activities:

Army - AR, AV, MI, SM

Navy - AS, CG, MC

Air Force - 13, 19

10

MIL-PRF-19500/225F

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current

contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s)

or to amend contractual requirements.

1. DOCUMENT NUMBER

MIL-PRF-19500/225F

2. DOCUMENT DATE

99/06/21

I RECOMMEND A CHANGE:

3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, TYPES 2N1711, 2N1711S, 2N1890,

2N1890S, JAN AND JANTX

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial)

b. ORGANIZATION

c. ADDRESS (Include Zip Code)

d. TELEPHONE (Include Area Code)

7. DATE SUBMITTED

Commercial

DSN

FAX

EMAIL

8. PREPARING ACTIVITY

b. TELEPHONE

Commercial

614-692-0510

a. Point of Contact

Alan Barone

DSN

FAX

EMAIL

850-0510

614-692-6939

alan_barone@dscc.dla.mil

c. ADDRESS

Defense Supply Center Columbus

ATTN: DSCC-VAT

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC -LM)

8725 John J. Kingman Road, Suite 2533

Columbus, OH 43216-5000

Fort Belvior, Virginia 22060-6221

Telephone (703) 767-6888 DSN 427-6888

DD FORM 1426, FEB 99 (EG)

PREVIOUS EDITIONS ARE OBSOLETE

WHS/DIOR, Feb 99

11


型号：	JANTX2N1711S
厂家：	ETC
描述：	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-39 晶体管\| BJT \| NPN \| 50V V（ BR ） CEO \| 1A I（C ） \| TO- 39\n 晶体晶体管
文件：	总11页 (文件大小：59K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JANTX2N1711S [ETC]

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