JANTX2N3421S [ETC]
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-5 ; 晶体管| BJT | NPN | 80V V（ BR ） CEO | TO- 5\n
| 型号： | JANTX2N3421S |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-5
|
| 文件： | 总21页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH-POUND
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 25 August 2001.
MIL-PRF-19500/393D
25 May 2001
SUPERSEDING
MIL-PRF-19500/393C
20 April 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER
TYPES 2N3418, 2N3418S, 2N3419, 2N3419S, 2N3420, 2N3420S, 2N3421, 2N3421S
JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1. Scope. This specification covers the performance requirements for NPN, silicon, transistors for use in
medium power switching applications. Four levels of product assurance are provided for each device type, and two
levels of product assurance for die (element evaluation) are provided, as specified in MIL-PRF-19500.
1.2. Physical dimensions. See figure 1 (similar to TO-5 for long leaded devices and TO-39 for short leaded
devices), figure 2, and figure 3 for JANHC and JANKC (die) dimensions.
1.3. Maximum ratings.
Type
P
P
V
V
V
I
I
T
and T
OP
T
T
CBO
CEO
EBO
C
C
STG
T
= +25°C
(1)
T
= +100°C
C
(3)
A
(2)
W
W
V dc
85
V dc
60
V dc
A dc
A dc
°C
2N3418, 2N3418S
2N3419, 2N3419S
2N3420, 2N3420S
2N3421, 2N3421S
1.0
15
15
15
15
8
8
8
8
3
3
3
3
5
5
5
5
-65 to +200
-65 to +200
-65 to +200
-65 to +200
1.0
125
85
80
1.0
60
1.0
125
80
(1) Derate linearly at 5.72 mW/°C above TA > +25°C.
(2) Derate linearly at 150 mW/°C above TC > +100°C.
(3) This value applies for tp ≤ 1 ms, duty cycle ≤ 50 percent.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, Post
Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/393D
1.4. Primary electrical characteristics at TA = +25°C.
h
(1)
h
(1)
V
I
V
|h |
C
obo
Limits
R
θJC
FE2
FE4
CE(sat)
BE(sat)1
fe
1 (1)
V
= 2 V dc
V
= 5 V dc
= 1 A
I
= 1 A dc
V
I
= 10 V
CE
V
= 10 V
dc
CE
CE
C
C
CB
dc
dc
I
= 1 A dc
I
= 5 A dc
I
= 0.1
A dc
I
= 0.1 A
dc
= 0.1 A
dc
I
= 0
C
C
B
B
C
E
f = 20 MHz
100 kHz ≤ f ≤
1 MHz
2N3418
2N3418S 2N3420S 2N3418S
2N3419 2N3421 2N3419
2N3419S 2N3421S 2N3419S
2N3420
2N3418
2N3420
2N3420S
2N3421
2N3421S
V dc
0.25
V dc
0.6
pF
°C/W
Min
20
60
40
10
15
1.3
8
Max
120
1.2
150
6.67
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/393D
Dimensions
Inches Millimeters
Symbol
Note
Min
Max
.335
.260
.370
Min
7.75
6.10
8.51
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
.305
.240
.335
.200 TP
5.08 TP
6
7
.016
.500
.021
.750
0.41
12.7
0.53
19.05
See notes 7, 13, 14
.050
1.27
7
7
5
.250
.100
6.35
2.54
Q
.040
.045
.034
.010
0.86
1.14
.86
4
TL
TW
r
.029
.028
0.74
0.71
3,10
9,10
11
6
0.25
α
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic
handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating
plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct
methods or by gauge.
7. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. Lead number three is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .021 inch (0.53 mm).
10. Lead number 4 omitted on this variation.
11. Symbol r applied to both inside corners of tab.
12. For transistor types 2N3418S, 2N3419S, 2N3420S, 2N3421S, LL is .500 (12.70 mm) minimum and
.750 (19.05 mm) maximum.
13. For transistor types 2N3418, 2N3419, 2N3420, 2N3421, LL is .500 (38.10 mm) minimum, and 1.750
(44.45 mm) maximum.
14. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
15. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
FIGURE 1. Physical dimensions.
3
MIL-PRF-19500/393D
Letter
A
Dimensions
Inches
Max
Millimeters
Min
Min
2.97
Max
3.23
.117
.127
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is .005 (0.13 mm).
4. The physical characteristics of the die are;
Thickness: .008 (0.20 mm) to .012 (0.30 mm), tolerance is .005 (0.13 mm).
Top metal: Aluminum, 40,000 Å minimum, 50,000 Å nominal.
Back metal: Gold 2,500 Å minimum, 3,000 Å nominal.
Back side: Collector.
Bonding pad: B = .015 (0.38 mm) x .0072 (.183).
E = .015 (0.38 mm) x .0060 (.152).
FIGURE 2. JANHCA and JANKCA die dimensions.
4
MIL-PRF-19500/393D
1. Chip size:
.075 x .075 inch ±.002 inches (1.905 x 1.905 mm ±0.051 mm).
2. Chip thickness: .010 ±.0015 inches nominal (0.254 ±0.0381 mm).
3. Top metal:
4. Back metal:
Aluminum 30,000 Å minimum, 33,000 Å nominal.
A. Al/Ti/Ni/Ag12kÅ/3kÅ/7kÅ/7kÅmin.,15kÅ/5kÅ/10kÅ/10kÅ nom.
B. Gold 2,500Å minimum, 3000Å nominal.
5. Backside:
Collector.
6. Bonding pad:
B = .023 x .008 inch (0.5842 x 0.2032 mm), E = .049 x .008 inch (1.2446 x 0.2032 mm).
FIGURE 3. JANHC and JANKC B-version die dimensions.
5
MIL-PRF-19500/393D
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.4).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1, (similar to TO-5 and TO-39) and figures 2 and figure 3 (die) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in paragraph 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I
herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
6
MIL-PRF-19500/393D
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3c
Thermal impedance
(see 4.3.3)
Thermal impedance
(see 4.3.3)
9
I
and h
I
CEX1
FE2
CEX1
11
I
; h ; ∆I
CEX1 FE2
= 100 percent
I
and h ; ∆I
= 100
CEX1
CEX1
CEX1
FE2
or 50 nA dc, whichever is greater;
percent or 100 nA dc, whichever is
greater.
∆h = +15 , -10 percent change of
FE2
initial value.
12
13
See 4.3.1
See 4.3.1
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
∆I
= 100 percent or 50 nA dc,
∆I
= 100 percent or 100 nA dc,
CEX1
CEX1
whichever is greater; ∆h
= +15,
whichever is greater; ∆h
= +20,
FE2
FE2
-10 percent of initial value.
-10 percent of initial value.
4.3.1. Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +175°C minimum and a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
4.3.2 Screening JANHC or JANKC. Screening of die shall be in accordance with MIL-PRF-19500.
4.3.3. Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750.
a. IM measurement current ------------ 10 mA.
b. IH forward heating current --------- 2 A (min).
c. tH heating time ------------------------ 10 ms.
d. tmd measurement delay time ----- 50 µs max.
e. VCE collector-emitter voltage ----- 10 V dc minimum.
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 55°C/W.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I,
group A, subgroup 2 herein.
7
MIL-PRF-19500/393D
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) and shall
be in accordance with group A, subgroup 2. Delta requirements shall be in accordance with table III and the notes
for table III herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-
points) for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A,
subgroup 2 herein. Delta requirements shall be in accordance with table III and the notes for table III herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method
Condition
B3
B4
B5
B7
2037
1037
1027
3053
Test condition A. All internal wires for each device shall be pulled separately.
VCE = 5 V dc, 2,000 cycles.
VCE = 5 V dc, PT adjusted to achieve TJ and time required in MIL-PRF-19500.
TA = +25°C, IB = 0.5 A dc, IC = 3.0 A dc, see figure 4.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
1
Method
1039
Condition
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied
to achieve TJ = +175°C minimum and a minimum of PD = 75 percent of maximum rated PT
as defined in 1.3. n = 45 devices, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0.
3
4
1032
3053
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
TA = +25°C, IB = 0.5 A dc, IC = 3.0 A dc, see figure 4.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANJ, JANTX, and JANTXV samples shall be selected randomly from a minimum of three
wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from
each inspection lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX,
and JANTXV) may be pulled prior to the application of final lead finish.
8
MIL-PRF-19500/393D
4.4.3. Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein. Delta measurements shall be in accordance with table III and the
notes for table III herein.
4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Test condition E.
C6
1026
TA = +25 ±5°C; TJ = +150°C minimum. (Not applicable to JAN, JANTX,
and JANTXV).
VCB = 40 V dc for types 2N3418, 2N3418S, 2N3420, and 2N3420S.
VCB = 60 V dc for types 2N3419, 2N3419S, 2N3421, and 2N3421S.
4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. In case
qualification was awarded to a prior revision of the associated specification that did not request the performance of
table II tests, the tests specified in table II herein must be performed to maintain qualification.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method
3131 of MIL-STD-750. The following details shall apply:
a. Collector current magnitude during power applications shall be 1.0 A dc.
b. Collector to emitter voltage magnitude shall be 10 V dc.
c. The measuring current magnitude shall be 1 mA dc.
d. Reference temperature measuring point shall be the case.
e. Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started.
f. Mounting arrangement shall be out to heat sink.
g. Maximum limits for RθJC shall be 6.67°C/W.
9
MIL-PRF-19500/393D
TABLE I. Group A inspection.
Inspection 1/
Subgroup 1 2/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
2071
Min
Max
Visual and mechanical 3/
examination
n = 45 devices, c = 0
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 4/
Fine leak
n = 22 devices, c = 0
Gross leak
Electrical measurements 4/
Bond strength 3/ 4/
Group A, subgroup 2
2037
3011
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Breakdown voltage
collector to emitter
Bias condition D;
= 50 mA dc, I = 0,
V
(BR)CEO
I
C
B
pulsed (see 4.5.1)
2N3418, 2N3418S
2N3420, 2N3420S
60
80
V dc
V dc
2N3419, 2N3419S
2N3421, 2N3421S
Collector to emitter
cutoff current
3041
Bias condition A;
I
CEX1
V
V
= -0.5 V dc
= 80 V dc
BE
CE
2N3418, 2N3418S
2N3420, 2N3420S
0.3
0.3
µA dc
µA dc
2N3419, 2N3419S
2N3421, 2N3421S
V
= 120 V dc
CE
Collector to emitter
cutoff current
3041
Bias condition D;
= 0
I
CEO
I
B
2N3418, 2N3418S
2N3420, 2N3420S
V
V
= 45 V dc
5.0
5.0
µA dc
µA dc
CE
CE
2N3419, 2N3419S
2N3421, 2N3421S
= 60 V dc
See footnotes at end of table.
10
MIL-PRF-19500/393D
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
Subgroup 2 - Continued
Emitter to base
cutoff current
3061
3061
3076
Bias condition D;
= 6 V dc, I = 0
I
I
0.5
10
µA dc
µA dc
EBO1
EBO2
V
EB
C
Emitter to base
cutoff current
Bias condition D;
V
= 8 V dc, I = 0
C
EB
Forward current
transfer ratio
V
= 2 V dc; I = 100 mA dc,
h
FE1
CE
C
pulsed (see 4.5.1)
2N3418, 2N3418S
2N3419, 2N3419S
2N3420, 2N3420S
2N3421, 2N3421S
20
40
Forward current
transfer ratio
2N3418, 2N3418S
2N3419, 2N3419S
2N3420, 2N3420S
2N3421, 2N3421S
3076
3076
3076
V
= 2 V dc; I = 1.0 A dc,
hFE2
hFE3
hFE4
CE
C
pulsed (see 4.5.1)
20
40
60
120
Forward current
transfer ratio
2N3418, 2N3418S
2N3419, 2N3419S
2N3420, 2N3420S
2N3421, 2N3421S
V
= 2 V dc; I = 2 A dc,
CE
C
pulsed (see 4.5.1)
15
30
Forward current
transfer ratio
V
= 5 V dc; I = 5 A dc,
CE
C
pulsed (see 4.5.1)
2N3418, 2N3418S
2N3419, 2N3419S
2N3420, 2N3420S
2N3421, 2N3421S
10
15
Base-emitter voltage
(saturated)
3066
3066
3071
Test condition A; I = 1.0 A dc,
VBE(sat)1
6/
0.6
0.7
1.2
1.4
V dc
V dc
V dc
C
I
= 0.1 A dc, pulsed (see 4.5.1)
B
Base-emitter voltage
(saturated)
Test condition A; I = 2.0 A dc,
VBE(sat)2
6/
C
I
= 0.2 A dc, pulsed (see 4.5.1)
B
Saturation voltage and
resistance (collector-
emitter)
I
= 1.0 A dc, I = 0.1 A dc,
VCE(sat)1
6/
0.25
C
B
pulsed (see 4.5.1)
Saturation voltage and
resistance (collector-
emitter)
3071
I
= 2.0 A dc, I = 0.2 A dc,
VCE(sat)2
6/
0.5
V dc
C
B
pulsed (see 4.5.1)
See footnotes at end of table.
11
MIL-PRF-19500/393D
TABLE I. Group A inspection - Continued.
Inspection 1/
Subgroup 3
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3041
Min
Max
High-temperature
operation:
T = +150°C
A
Collector to emitter
cutoff current
Bias condition A;
I
CEX2
V
= -0.5 V dc
BE
2N3418, 2N3418S
2N3420, 2N3420S
V
= 80 V dc
50
50
µA dc
CE
2N3419, 2N3419S
2N3421, 2N3421S
V
= 120 V dc
µA dc
CE
Low-temperature
operation:
T = -55°C
A
Forward current
transfer ratio
3076
3306
V
= 2 V dc, I = 1 A dc
h
FE5
10
CE
C
pulsed (see 4.5.1)
Subgroup 4
Small-signal short-
circuit forward-
current transfer
ratio
V
= 10 V dc;
= 0.1 mA dc; f = 20 MHz
|h |
fe
1.3
8
CE
I
C
magnitude of
common emitter)
Open-circuit output
capacitance
3236
V
= 10 V dc, I = 0 ,
C
obo
150
pF
CB
E
100 kHz ≤ f ≤ 1 MHz
Switching time
Subgroup 5
I
I
I
= 1.0 A dc,
t
t
t
t
t
0.22
0.08
1.10
0.20
1.20
µs
µs
µs
µs
µs
C
r
d
s
f
= 100 mA dc,
= -100 mA dc,
B(1)
B(2)
V
= -3.7 V dc,
BE(off)
R = 20 Ω, see figure 5
L
off
Safe operating area
(continuous dc)
3051
T = +100°C, t ≥ 1 s, 1 cycle,
C
see figure 6
Test 1
Test 2
Test 3
I
I
= 3 A dc, V = 5 V dc
CE
C
C
= 0.4 A dc, V = 37 V dc
CE
2N3418, 2N3418S
2N3420, 2N3420S
I
I
= 0.185 A dc, V = 60 V dc
CE
C
C
2N3419, 2N3419S
2N3421, 2N3421S
= 0.12 A dc, V = 80 V dc
CE
See footnotes at end of table.
12
MIL-PRF-19500/393D
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3053
Min
Max
Subgroup 5 -
Continued
Safe operating area
(clamped switching)
T
= +25°C, I = 0.5 A dc,
A
B
I
= 3.0 A dc, see figure 7
C
Electrical
See group A, subgroup 2 herein
measurements
Subgroup 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
6/ Measured at a point on the leads no further than .125 inch (3.18 mm) from the case.
13
MIL-PRF-19500/393D
TABLE II. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Qualification
Method
Conditions
Subgroup 1
12 devices
c = 0
Temperature cycling
(air to air)
1051
1071
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2
See group A, subgroup 2.
45 devices
c = 0
Intermittent life
1037
Intermittent operation life: VCB = 10 V dc.
See group A, subgroup 2.
Electrical measurements
Subgroups 3, 4, and 5
Not applicable
14
MIL-PRF-19500/393D
TABLE III. Groups B and C delta measurements. 1/ 2/ 3/
Step
1.
Inspection
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
3076
Min
Max
Forward-current
transfer ratio
V
I
= 2 V dc
∆h
1/
+20 percent,
CE
FE2
= 1.0 A dc
-10 percent change
from initial
C
pulsed (see 4.5.1)
group A reading
2.
Collector to emitter
cutoff current
3041
Bias condition A;
∆I
1/
CEX1
V
V
= -0.5 V dc
= 80 V dc
BE
CE
2N3418, 2N3418S
2N3420, 2N3420S
100 percent of
initial value or
100 nA dc, which-
ever is greater
2N3419, 2N3419S
2N3421, 2N3421S
V
= 120 V dc
100 percent of
initial value or
100 nA dc, which-
ever is greater
CE
3.
Saturation voltage and
resistance (collector-
emitter)
3071
I
I
= 1.0 A dc,
= 0.1 A dc,
∆V
±50 mV dc
C
B
CE(sat)1
1/
change from
previously
pulsed (see 4.5.1)
measured value
1/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 4, see table III herein, steps 1 and 3.
b. Subgroup 5, see table III herein, steps 1, 2, and 3.
2/ The delta measurements for 4.4.2.2 (JAN, JANTX, JANTXV) of MIL-PRF-19500 are as follows: Steps 1, 2, and 3
of table III herein, after each step in 4.4.2.2.
3/ The delta measurements for table VII (JANS) of MIL-PRF-19500 are as follows: Subgroups 2, 3, and 6, see table
III herein, steps 1, 2, and 3.
15
MIL-PRF-19500/393D
NOTES:
RS ≤ 1.0 Ω (noninductive), L = 10 mH
Procedure:
1. With switch S1 closed, set the specified test conditions.
2. Open S1.
3. Perform specified end-point tests.
FIGURE 4. Unclamped inductive sweep test circuit diagram.
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics:
tr ≤ 15 ns, tf ≤ 15 ns, ZOUT = 50 Ω, PW = 2 µs, duty cycle ≤ 2 percent.
2. Output waveforms are monitored by an oscilloscope with the following characteristics:
tr ≤ 15 ns, Rin ≥ 10 MΩ, Cin ≤ 11.5 pF.
3. Resistors shall be noninductive types.
4. The DC power supplies may require additional by-passing in order to minimize ringing.
FIGURE 5. Pulse response test circuit.
16
MIL-PRF-19500/393D
FIGURE 6. Maximum safe operating region.
17
MIL-PRF-19500/393D
NOTES:
Voltage clamp: 2N3418, 2N2418S, 2N3420, 2N3420S = 85 V dc
2N3419, 2N3419S, 2N3421, 2N3421S = 125 V dc
RS ≤ 1.0 Ω (noninductive), L = 40 mH
Procedure:
1. With switch S1 closed, set the specified test conditions.
2. Open S1.
3. Perform specified end-point tests.
FIGURE 7. Clamped inductive sweep test circuit diagram.
18
MIL-PRF-19500/393D
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2).
c. Packaging requirements (see 5.1).
d. Lead finish (see 3.4.1).
6.3. Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N5152) will be identified on the QML.
JANHC and JANKC ordering information
PIN
Manufacturer
33178
43611
2N3418
2N3419
2N3420
2N3421
JANHCA2N3418
JANHCA2N3419
JANKCA2N3420
JANKCA2N3421
JANHCB2N3418
JANHCB2N3419
JANKCB2N3420
JANKCB2N3421
2N3418S
2N3419S
2N3420S
2N3421S
JANKCA2N3418S
JANKCA2N3419S
JANKCA2N3420S
JANKCA2N3421S
JANKCB2N3418S
JANKCB2N3419S
JANKCB2N3420S
JANKCB2N3421S
19
MIL-PRF-19500/393D
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect
to the previous issue due to the extensiveness of the changes.
Custodians:
Army - CR
Navy - NW
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2388)
Review activities:
Army - AR, AV, MI
Navy - AS, CG, MC
Air Force - 19
20
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/393D
2. DOCUMENT DATE
25 May 2001
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER TYPES 2N3418, 2N3418S, 2N3419, 2N3419S, 2N3420,
2N3420S, 2N3421, 2N3421S JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan_barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center, Columbus
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
P.O. Box 3990
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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