JANTX2N6383 [ETC]

TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 10A I(C) | TO-3 ; 晶体管| BJT |达林顿| NPN | 40V V（ BR ） CEO | 10A I（C ） | TO- 3\n


型号：	JANTX2N6383
厂家：	ETC
描述：	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 40V V(BR)CEO \| 10A I(C) \| TO-3 晶体管\| BJT \|达林顿\| NPN \| 40V V（ BR ） CEO \| 10A I（C ） \| TO- 3\n 晶体晶体管局域网
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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 10 November 1999.

INCH-POUND

MIL-PRF-19500/523B

10 August 1999

SUPERSEDING

MIL-S-19500/523A

21 July 1993

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER

TYPES 2N6383, 2N6384, 2N6385, JAN, JANTX, AND JANTXV

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-3).

1.3 Maximum ratings.

CBO

CEO

EBO

and

Max

qJC

= +25°C

STG

V dc

A dc

°C

°C/W

2N6383

2N6384

2N6385

6.0

100

5.0

0.25

-55 to +175

1.75

1/ Derate linearly 34.2 mW/°C above T > +25°C.

2/ Derate linearly 571 mW/°C above T > +25°C.

1.4 Primary electrical characteristics.

Switching

V = 30 V dc

obo

|h |

FE1

CE(SAT)1

CE(SAT)2

BE(ON)1

= 3.0 V dc

= 5.0 A dc

= 10 A dc

= 3.0 V dc

= 10 V dc

= 5.0 V dc

= 5.0 A dc

= 10 mA dc

= 0.1 A dc

= 5.0 A dc

= 0

= 1.0 A dc

f = 1 MHz

= 5.0 A dc

100 kHz < f £ 1 MHz

= 20 mA dc

V dc

2.0

V dc

3.0

V dc

2.8

Min

Max

1,000

20,000

300

200

2.5

10.0

1/ Pulsed, see 4.5.1

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH

43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or

by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

MIL-PRF-19500/523B

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include

documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has

been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements

documents cited in sections 3 and 4 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document

to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department

of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500

STANDARD

MILITARY

MIL-STD-750

- Semiconductor Devices, General Specification for.

Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated

Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)

3. REQUIREMENTS

3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing

on the applicable qualified manufacturer’s list before contract award (see 4.2 and 6.3).

3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-

19500.

3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1 herein. The preferred measurements used herein are the metric units. However, this transistor was

designed using inch-pound units of measurement. In case of conflicts between the metric and inch-pound units, the inch-pound units

shall rule.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of

lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2)

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in

1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical requirements shall be the subgroups specified in table I herein.

MIL-PRF-19500/523B

FIGURE 1. Dimensions and configuration (T0-3).

MIL-PRF-19500/523B

Dimensions

Inches Millimeters

Max

Symbol

Notes

Min

Max

22.23

11.43

13.34

4.78

0.875

0.450

0.525

0.188

0.250

0.495

0.131

6.35

12.57

3.33

0.050

0.038

0.312

0.135

0.043

1.27

0.97

7.92

3.43

1.09

0.050

1.27

MHD

MHS

0.151

1.177

0.420

0.205

0.161

1.197

0.440

0.225

3.84

29.90

10.67

5.21

4.09

30.40

11.18

5.72

0.655

0.675

16.64

17.15

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. These dimensions should be measured at points 0.050 inch (1.27 mm) and 0.055 inch (1.40 mm) below seating plane. When

gauge is not used measurement will be made at the seating plane.

4. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930

inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15

mm) convex overall.

5. Mounting holes shall be deburred on the seating plane side.

6. Collector is electrically connected to the case.

FIGURE 1. Dimensions and configuration (T0-3) continued.

MIL-PRF-19500/523B

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3)

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified

herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein

shall not be acceptable.

Screen (see table IV of

MIL-PRF-19500)

Measurement

JANTX and JANTXV levels only

and h

FE1

CEX1

See 4.3.1

DI = 100 percent of initial value or 100 mA dc,

CEX1

whichever is greater;

Dh = ± 25 percent of initial value;

FE1

subgroup 2 of table I herein.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:

T = +162.5°C ±12.5°C;

2N6383 = V = 30 V dc; 2N6384 = V = 40 V dc; 2N6385 = V = 60 V dc.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical

measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance

with table I, subgroup 2 herein.

4.4.2.1 Group B inspection, table VIb of MIL-PRF-19500.

Subgroup

Method

1027

Condition

For solder die attach: V ³ 10 V dc, 2,000 cycles, T £ 35°C.

1026

For eutectic die attach: V ³ 10 V dc, T £ 35°C adjust P to achieve T = 150°C

minimum.

3131

= 20 V dc; I = 10 A; R

= 1.75°C/W maximum.

qJC

MIL-PRF-19500/523B

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VII of MIL-PRF-19500, and as follows. Electrical measurements (end points) shall be in accordance with table I, subgroup 2 herein.

4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.

Subgroup

Method

2036

Condition

Test condition A; weight = 10 pounds; t = 15 s.

1027

1026

For solder die attach: V ³ 10 V dc, 6,000 cycles, T £ 35°C.

CB A

For eutectic die attach: V ³ 10 V dc, T £ 35°C adjust P to achieve T = 150°C

minimum.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750.

MIL-PRF-19500/523B

TABLE I. Group A inspection.

Inspection 1/

Subgroup 1

MIL-STD-750

Conditions

Symbol

Limits

Unit

Method

2071

Min

Max

Visual and mechanical

Examination

Subgroup 2

Collector to emitter

breakdown voltage

3011

Bias condition D

(BR)CEO

= 200 mA dc, Pulsed (see 4.5.1)

2N6383

2N6384

2N6385

V dc

Collector to emitter

breakdown voltage

Bias condition B

= 200 mA dc

(BR)CER

= 100W, Pulsed (see 4.5.1)

2N6383

2N6384

2N6385

V dc

Collector to emitter

cutoff current

3041

Bias condition D

1.0

mA dc

CEO

2N6383

2N6384

2N6385

= 40 V dc

= 60 V dc

= 80 V dc

Emitter to base

cutoff current

3061

3041

Bias condition D

= 5.0 V dc

5.0

0.3

mA dc

EBO

Collector to emitter

cutoff current

Bias condition A

CEX1

= 1.5 V dc

2N6383

2N6384

2N6385

= 40 V dc

= 60 V dc

= 80 V dc

Collector to base

cutoff current

3036

Bias condition D

1.0

mA dc

CBO1

2N6383

2N6384

2N6385

= 40 V dc

= 60 V dc

= 80 V dc

See footnote at end of table.

MIL-PRF-19500/523B

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Conditions

Symbol

Limits

Unit

Method

Min

Max

Subgroup 2 – Continued

Base emitter voltage

(unsaturated)

3066

Test condition B

2.8

4.5

V dc

BE(on)1

= 3.0 V dc, I = 5.0 A dc

Base emitter voltage

(unsaturated)

Test condition B

= 3.0 V dc, I = 10 A dc

BE(on)2

pulsed (see 4.5.1)

Saturated voltage

and resistance

3071

3076

2.0

3.0

V dc

= 5.0 A dc

CE(sat)1

= 10 mA dc, pulsed (see 4.5.1)

Saturated voltage

and resistance

= 10 A dc

CE(sat)2

= 0.1 A dc, pulsed (see 4.5.1)

Forward-current

transfer ratio

1,000

100

20,000

= 3 V dc

FE1

= 5 A dc;

pulsed (see 4.5.1)

Forward current

transfer ratio

3076

= 3.0 V dc

FE2

= 10 A dc, pulsed (see 4.5.1)

Subgroup 3

High temperature

operation:

= +150°C

Collector to emitter

cutoff current

3041

3.0

mA dc

Bias condition A

CEX2

= 1.5 V dc

2N6383

2N6384

2N6385

= 40 V dc

= 60 V dc

= 80 V dc

Low temperature

operation:

= -55°C

= 3.0 V dc

Forward-current

transfer ratio

3076

200

FE3

= 5.0 A dc, pulsed (see 4.5.1)

See footnote at end of table.

MIL-PRF-19500/523B

TABLE I. Group A inspection - Continued.

Inspection 1/

Subgroup 4

MIL-STD-750

Conditions

Symbol

Limits

Unit

Method

3251

Min

Max

Pulse response

Test condition A, except test circuit and

pulse requirements in accordance

with figure 2

Turn-on time

Turn-off time

2.5

= 30 V dc

= 5.0 A dc

= 20 mA dc

= 30 V dc

off

= 5.0 A dc

= - I = 20 mA dc

Small-signal short-

circuit forward-

current transfer ratio

3306

3236

300

200

= 5 V dc

|h |

= 1 A dc

f = 1.0 MHz

Open circuit output

Capacitance

= 10 V dc; I = 0

obo

100 kHz £ f £ 1 MHz

Subgroup 5

Safe operating area

(continuous dc)

3053

= +25°C; t = 1.0 s, 1 cycle

See figure 3

Test 1

(Both device types)

= 10 V dc; I = 10 A dc

Test 2

(All device types)

= 30 V dc; I = 3.33 A dc

Test 3

2N6383

= 40 V dc; I = 1.5 A dc

= 60 V dc; I = 0.4 A dc

2N6384

2N6385

= 80 V dc; I = 0.16 A dc

See footnote at end of table.

MIL-PRF-19500/523B

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Conditions

Symbo

Limits

Unit

Method

3053

Min

Max

Subgroup 5 – Continued

Electrical measurements

See table II, steps 1 and 3

Safe operating area

(switching)

Load condition C (unclamped inductive

load) See figure 4

= 25°C, duty cycle £ 10 percent

= 0.1W

Test 1

t approximately 1 ms (vary to obtain I )

= 1 kW; V

= 10 V dc;

BB1

BB2

BB1

= ¥ ; V

= 0 V; V = 30 V dc;

BB2 CC

= 10 A dc; R £ 0.5W;

L = 1 mH at 10 A dc

Electrical measurements

Test 2

See table I, Subgroup 2.

t approximately 1 ms (vary to obtain I )

= 10 KW; V

= 10 V dc;

BB1

BB2

BB1

= ¥ ; V = 0 V; V = 30 V dc;

BB2 CC

= 0.2 A dc; L = 100 mH at 0.2 A dc;

£ 0.5W

Safe operating area (switching)

Load condition B (clamped inductive load)

See figure 5.T = 25°C,

t + t £ 1.0 ms, duty cycle £ 10 percent; t

= 5 ms (vary to obtain I ) R_s= 0.1 W; V

= 10 V dc; I = 10 A dc

2N6383

2N6384

2N6385

Clamp voltage = 40 V dc

Clamp voltage = 60 V dc

Clamp voltage = 80 V dc

Device fails if clamp voltage is not reached

See table I, subgroup 2

Electrical measurements

1/ For sampling plan, see MIL-PRF-19500.

MIL-PRF-19500/523B

NOTES:

The rise time (t ) and fall time (t ) of the applied pulse shall be each < 20 nanoseconds; duty cycle < 2 percent, generator

r f

source impedance shall be 50W; pulse width = 20 ms.

Output sampling oscilloscope: Z > 100 kW; C < 50 pF; rise time < 2 nanoseconds.

Pulse In shall be 10 V maximum.

FIGURE 2. Pulse response test circuit.

MIL-PRF-19500/523B

FIGURE 3. Maximum safe operating graph (continuous dc).

MIL-PRF-19500/523B

FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load).

MIL-PRF-19500/523B

NOTES:

1. Either a clamping circuit or clamping diode may be used.

2. The coil used shall provide a minimum inductance of 1 mH at 10 A with a max dc resistance of 0.1 ohm.

3. £ 0.1 oh. 12 W, 1 percent tolerance max (noninductive).

4. With switch S1 closed, set the specified test conditions.

5. Open S1. Device fails if clamp voltage is not reached and maintained until the current returns to zero.

6. Perform specified end point tests.

FIGURE 5. Clamped inductive sweep test circuit.

MIL-PRF-19500/523B

5. PACKAGING

5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental

to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible

packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points'

packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging

data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or

by contacting the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents must specify the following:

a. Issue of DODISS to be cited in the solicitation (see 2.2.1).

b. The lead finish as specified (see 3.4.1).

c. Type designation and quality assurance level.

d. Packaging requirements (see 5.1).

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of

award of contract, qualified for inclusion in Qualified Manufacturer’s List QML No.19500 whether or not such products have actually been

so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the

products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded

contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be

obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000.

6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous

issue due to the extent of the changes.

Custodian:

Army - CR

Navy - EC

Air Force - 11

NASA – NA

DLA - CC

Preparing activity:

DLA - CC

Review activities:

Air Force – 13, 19

(Project 5961-2074)

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts.

Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend

contractual requirements.

1. DOCUMENT NUMBER

MIL-PRF-19500/523B

2. DOCUMENT DATE

990810

I RECOMMEND A CHANGE:

3. DOCUMENT TITLE

SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6383, 2N6384, 2N6385 JAN, JANTX AND

JANTXV

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial)

b. ORGANIZATION

c. ADDRESS (Include Zip Code)

d. TELEPHONE (Include Area Code)

7. DATE SUBMITTED

COMMERCIAL

DSN

FAX

8. PREPARING ACTIVITY

b. TELEPHONE

Commercial

614-692-0510

a. Point of Contact

Alan Barone

DSN

FAX

850-0510

614-692-6939

alan_barone@dscc.dla.mil

c. ADDRESS

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221

Telephone (703) 767-6888 DSN 427-6888

Defense Supply Center Columbus, ATTN:

DSCC-VAC, 3990 East Broad Street, Columbus, OH

43216-5000

DD Form 1426, Feb 1999 (EG)

Previous editions are obsolete

WHS/DIOR, Feb 99

JANTX2N6383 [ETC]

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