JANTX2N6898 [ETC]


型号：	JANTX2N6898
厂家：	ETC
描述：	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-204AE 晶体管\| MOSFET \| P沟道\| 100V V（ BR ） DSS \| 25A I（ D） \| TO- 204AE 晶体晶体管开关脉冲局域网
文件：	总24页 (文件大小：138K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be

slightly different in format due To electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 21 August 1999

INCH-POUND

MIL-PRF-19500/565B

21 May 1999

SUPERSEDING

MIL-S-19500/565A

7 October 1987

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,

SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898

JAN, JANTX, JANTXV AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897; and

TO-204AE for 2N6898 (formerly TO – 3).

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Type

T and

= +25°C

T = +100°C

STG

V dc

100

V dc

100

V dc

±20

A dc

A(pk)

°C

-55 to +150

2N6895

2N6896

2N6897

2N6898

8.33

100

150

0.6

1.16

6.0

0.74

3.8

7.6

1.16

6.0

15.8

1/ Derate linearly T > +25°C – 2N6895 (0.067 W/°C), 2N6896 (0.48 W/°C), 2N6897 (0.8 W/°C), 2N6898 (1.2 W/°C).

P(rated)

2/ Derate above T = +25 °C according to the formula

I_D

where P(rated) = P – (T = -25) (W/°C) watts;

K = max r

DS(on)

at T =+150°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

MIL-PRF-19500/565B

1.4 Primary electrical characteristics at T = +25°C.

Type

Min V

Max I

Max r

= -10 V dc

(BR)DSS

= 0 V

GS(th)1

DSS1

= 0 V

DS(on)

RQJC

³ V

= -1.0 mA dc

= 80 percent

= +25°C

T = +150°C

at I

rated V

V dc

-100

V dc

Min Max

-2.0 -4.0

Ohm

mA dc

-1.0

°C/W

2N6895

2N6896

2N6897

2N6898

3.65

0.6

0.3

0.2

6.15

1.67

0.69

0.24

15.0

2.083

1.25

0.83

1/ Pulsed (see 4.5.1).

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include

documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has

been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements

documents cited in section 3 and 4 of this specification, whether or not they are listed.

2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document

to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department

of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500

STANDARD

MILITARY

MIL-STD-750

- Semiconductor Devices, General Specification for.

Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the

Standardization Documents Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this

specification takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific

exemption has been obtained.

3. REQUIREMENTS

3.3 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.

MIL-PRF-19500/565B

FIGURE 1. Physical dimensions for 2N6895 (TO-205AF).

MIL-PRF-19500/565B

Ltr

Dimensions

Notes

Inches

Max

Millimeters

Min

.305

.160

.335

.009

.028

.029

.016

.500

Max

8.51

4.57

9.40

1.04

0.86

1.14

0.53

19.05

.335

.180

.370

.041

.034

.045

.021

.750

7.75

4.07

8.51

0.23

0.71

0.74

0.41

12.70

7,8

.200 TP

5.08 TP

.016

.019

.050

0.41

0.48

1.27

7,8

.250

.100

6.35

2.54

7,8

.050

.010

1.27

0.25

45 TP

NOTES:

1. Dimensions are in inches. Metric equivalents are given for general information only.

2. Beyond radius (r) maximum, j shall be held for a minimum length of 0.011 (0.028 mm).

3. Dimension k measured from maximum HD.

4. Outline in this zone is not controlled.

5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.

6. Leads at gauge plane 0.054 + 0.001, -0.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius

of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct

methods.

7. LU applies between L and L . LD applies between L and L minimum. Diameter is uncontrolled in L and beyond LL

minimum.

8. All three leads.

9. Radius (r) applies to both inside corners of tab.

10. Drain is electrically connected to the case.

FIGURE 1. Physical dimensions for 2N6895 (TO – 205AF) Continued.

MIL-PRF-19500/565B

Dimensions

Symbol

Inches

Millimeters

Notes

Min

Max

Min

Max

.875

.360

.525

.188

.135

.043

.500

.050

.161

1.197

.440

.225

.675

22.23

9.14

.250

.495

.131

.060

.038

.312

6.35

12.57

3.33

1.52

0.97

7.92

13.34

4.78

HR₁

3.43

1.09

12.70

1.27

LL₁

MHD

MHS

.151

1.177

.420

.205

.655

3.84

29.90

10.67

5.21

4.09

30.40

11.18

5.72

3, 5

PS₁

s₁

16.64

17.15

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. These dimensions should be measured at points 0.050 inch (1.27 mm) and 0.055 inch (1.40 mm) below seating plane.

Measurement will be made at the seating plane.

4. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930

inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15

mm) convex overall.

5. Mounting holes shall be deburred on the seating plane side.

6. Drain is electrically connected to the case.

FIGURE 2. Physical dimensions of transistor 2N6896,2N6897, 2N6898 (TO-204AA and TO-204).

MIL-PRF-19500/565B

3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-

19500 and as follows:

C - - - - - - - - - - - - - - - - - - - - -

Coulomb.

3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in

MIL-PRF-19500, MIL-HDBK-6100 and figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897;

and TO-204AE for 2N6898 herein.

3.3.1 Lead material and finish. Lead material shall be Kovar, Alloy 52 for T0-205AF, and a copper core or plated core is permitted

Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired,

it shall be specified in the acquisition document (see 6.2).

3.3.2 Internal construction. Multiple chip construction shall not be permitted.

3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of country of origin

may be omitted from the body of the transistor, but shall be retained on the initial container.

3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.

3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.

The following handling practices shall be followed:

a. Devices shall be handled on benches with conductive handling devices.

b. Ground test equipment, tools, and personnel handling devices.

c. Do not handle devices by the leads.

d. Store devices in conductive foam or carriers.

e. Avoid use of plastic, rubber, or silk in MOS areas.

Maintain relative humidity above 50 percent if practical.

g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.

h. Gate must be terminated to source, R £ 100 k, whenever bias voltage is to be applied drain to source.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as

specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3.

3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing

on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.2 ).

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II herein. Alternate flow is

allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500.

MIL-PRF-19500/565B

4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500.

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as

specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I

herein shall not be acceptable.

Screen (see table IV of

MIL-PRF-19500)

Measurement

JANS level

JANTX and JANTXV levels

Test condition G

1/ 2/

Method 3470 (see 4.5.4)

Method 3161 (see 4.5.3)

Method 3470 (see 4.5.4)

Method 3161 (see 4.5.3)

, gate stress test (see 4.5.5),

Gate stress test (see 4.5.5), subgroup 2 of table I

herein

GSS1, DSS1

subgroup 2 of table I herein

Method 1042, test condition B

Subgroup 2 of table I herein;

Method 1042, test condition B

Subgroup 2 of table I herein.

, I

, r

, V

, I

, r

, V

GSS1 DSS1 DS(on)1 GS(th)1

= ± 20 nA dc or ±100 percent of initial

GSS1

value, whichever is greater.

DI = ± .2 mA dc or ±100 percent of initial

DSS1

value, whichever is greater.

Method 1042, test condition A and test condition

C. (see 4.3.1)

Method 1042, test condition A

Subgroup 2 of table I herein;

Subgroups 2 and 3 of table I herein;

GSS1

= ± 20 nA dc or ±100 percent of initial

DI = ± 20 nA dc or ±100 percent of initial

GSS1

value, whichever is greater.

DI = ± .2 mA dc or ±100 percent of initial

value, whichever is greater.

DI = ± .2 mA dc or ±100 percent of initial

DSS1

value, whichever is greater.

DSS1

value, whichever is greater.

= ± 20 percent of initial value.

GS(th)1

DS(on)1

= ± 20 percent of initial value.

GS(th)1

1/ Shall be performed anytime before screen 9.

2/ Method 3470 is optional if performed as a sample in group A, subgroup 5.

4.3.1 Power burn-in. Power burn-in conditions are as follows: MIL-STD-750, method 3161, condition C, T = +25°C, -5°C, +10°C,

= 10 V min.; I_Dadjusted to meet a junction temperature of 140°C, - 5°C, + 10°C, t = 240 hours.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for

quality conformance inspection in accordance with figure 4 of MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical

measurements (end-points) shall be in accordance with the inspections of table II herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall

be in accordance with the inspections of table II herein.

MIL-PRF-19500/565B

4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

1051

Conditions

Test condition G.

1042

Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.

2N6895, V = -10 V dc, P = 4 W at T = +25°C ± 3°C.

2N6897, 2N6898, V

= -20 V dc, P = 0.6 W at T = +25°C ± 3°C.

1042

Accelerated steady-state operation life; test condition C; T = + 25°C, - 5°C, + 10°C, V = 10 V

min.; I adjusted to meet a junction temperature of 140°C, - 0°C, + 10°C, t = 240 hours.

2037

3161

Bond strength (Al-Au die interconnects only); test condition A.

See 4.5.2.

4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500.

Subgroup

Method

1051

Condition

Test condition G, 25 cycles.

1042

Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table II

herein.

Subgroup

Method

2036

Condition

Test condition E .

1042

Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table II

herein. 1/

Subgroup

Method

1051

Condition

Sampling plan

Test Condition G, 500 cycles

Electrical measurements

45 devices, c = 0

See table II, steps 1, 2, 3, 4, 5, 6, and 7.

1042

Test condition A, 1,000 hours.

Electrical measurements

See table II, steps 1, 2, 3, 4, 5, 6, and 7.

45 devices, c = 0

Test condition B, 1,000 hours.

Electrical measurements

See table II, steps 1, 2, 3, 4, 5, 6, and 7.

Not applicable

3161

see 1.4

5 devices, c = 0

qJC

Not applicable

_______

1/ A separate sample may be pulled for each test.

MIL-PRF-19500/565B

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Thermal impedance. Thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750.

= (2N6895 = 15.0°C/W, 2N6896 = 2.083°C/W, 2N6897 = 1.25°C/W, 2N6898 = 0.83°C/W.

= Steady-state (see

RQJC(max)

MIL-STD-750, method 3161 for definition).

2N6895

2N6896

10 mA

2N6897

10 mA

2N6898

10 mA

0.6 A

2 A

3.5 A

20 V

4 A

10 V

20 V

25 V

10 – 80 ms

10 ms max.

10 – 80 ms

10 ms max.

10 – 80 ms

10 ms max.

10 – 80 ms

10 ms max.

4.5.3 Thermal response (DV

measurements). The DV measurements shall be performed in accordance with MIL-STD-750,

method 3161. The DV conditions (I and V ) and maximum limit shall be derived by each vendor from the thermal response curves

(see figure 3) and shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall

apply.

2N6895

10 mA

2N6896

10 mA

2N6897

10 mA

2N6898

10 mA

0.6 A

10 V

2 A

3.5 A

20 V

4 A

20 V

25 V

10 – 80 ms

10 ms max.

10 – 80 ms

10 ms max.

10 – 80 ms

10 ms max.

10 – 80 ms

10 ms max.

4.5.4 Unclamped inductive switching.

a. Peak current (I )

2N6895

2N6896

2N6897

2N6898

1 A

2.7 A

5 A

5.9 A

b. Peak gate voltage (V ) ............................................................10 V.

c. Gate to source resistor (R ) ...................................................25W £ R

£ 200W.

d. Initial case temperature (T ) .....................................................+25°C, +10°C, -5°C.

e. Inductance (L).............................................................................100 mH ±10 percent.

Number of pulses to be applied ..................................................1 pulse minimum.

g. Pulse repetition rate....................................................................None.

4.5.5 Gate stress test.

= - 30 V minimum.

t = 250 ms minimum.

MIL-PRF-19500/565B

TABLE I. Group A inspection.

MIL-STD-750

Inspection 1/

Subgroup 1

Symbol

Limits

Unit

Method

2071

Conditions

Min

Max

Visual and mechanical

inspection

Subgroup 2

Breakdown voltage, drain to

source

3407

Bias condition C, V

= 0 V;

-100

(BR)DSS

= -1.0 mA dc

Gate to source voltage

(threshold)

3403

3411

> V ; I = -0.25 mA dc

-2.0

-4.0

V dc

GS(th)1

Gate current

Bias condition C; V

= 0 V;

nA dc

±100

GSS1

= +20 and -20 V dc

Drain current

3413

3421

= 0; bias condition C;

= -80 V

-1.0

mA dc

DSS1

Static drain to source on-state

resistance

= -10 V dc; condition A; pulsed

ohms

DS(on)1

(see 4.5.1)

2N6895

2N6896

2N6897

2N6898

3.65

0.6

0.3

0.2

= -0.74 A dc

= -3.8 A dc

= -7.6 A dc

= -15.8 A dc

Drain to source on-state voltage

3405

= 10 V dc; condition A; pulsed

(see 4.5.1)

DS(on)1

2N6895

2N6896

2N6897

2N6898

-6.0

-4.8

-6.0

= -1.16 A dc

= -6.0 A dc

= -12.0 A dc

= -25.0 A dc

Forward voltage (source drain

diode)

4011

Pulsed (see 4.5.1); V

= 0 V

-0.8

-1.6

2N6895

= -1.16 A dc

= -6.0 A dc

= -12.0 A dc

= -25.0 A dc

2N6896

2N6897

2N6898

See footnotes at end of table.

MIL-PRF-19500/565B

TABLE I. Group A inspection - Continued.

MIL-STD-750

Inspection 1/

Symbol

Limits

Unit

Method

3475

Conditions

Min

Max

Subgroup 2 continued

Forward transconductance

Pulsed (see 4.5.1), I = rated

=(see 1.3).

2N6895

2N6896

2N6897

2N6898

0.2

1.0

2.0

4.0

Subgroup 3

High temperature operation:

= T = +125°C

Gate to source voltage(threshold)

Gate current

3403

3411

> V , I = -0.25 mA dc

-1.0

V dc

GS(th)2

Bias condition C, V

= 0 V;

= +20 V dc and -20 V dc

nA dc

mA dc

ohms

±200

GSS2

Drain current

3413

3421

Bias condition C, V

= 0 V,

- 50

DSS2

= -80 V

Static drain to source on-state

resistance

= -10 V dc, Pulsed (see 4.5.1)

DS(on)2

2N6895

2N6896

2N6897

2N6898

5.66

0.96

0.465

0.24

= - 0.74 A dc

= - 3.8 A dc

= - 7.6 A dc

= - 15.8 A dc

Low temperature operation:

= T = -55°C

Gate to source voltage

(threshold)

3403

3472

> V , I = -0.25 mA

GS(th)3

-5.0

V dc

Subgroup 4

Switching time test

= rated I

(see 1.3);

= 10 V dc; R =15 W

gen

= 50 percent of rated

=15 W, V

(see 1.3);

Turn-on delay time

= -50 V dc

d(on)

2N6895

2N6896

2N6897

2N6898

= - 0.74 V dc

= - 3.8 V dc

= - 7.6 V dc

= - 15.8 V dc

See footnotes at end of table.

MIL-PRF-19500/565B

TABLE I. Group A inspection - Continued.

MIL-STD-750

Inspection 1/ 4/

Rise time

Symbol

Limits

Unit

Method

Conditions

Min

Max

= -50 V dc

2N6895

2N6896

2N6897

2N6898

= - 0.74 V dc

= - 3.8 V dc

= - 7.6 V dc

= - 15.8 V dc

100

175

250

Subgroup 4 - Continued.

Turn-off delay time

= -50 V dc

d(off)

2N6895

2N6896

2N6897

2N6898

= - 0.74 V dc

= - 3.8 V dc

= - 7.6 V dc

= - 15.8 V dc

150

275

400

Fall time

= -50 V dc

2N6895

2N6896

2N6897

2N6898

= - 0.74 V dc

= - 3.8 V dc

= - 7.6 V dc

= - 15.8 V dc

100

175

250

Subgroup 5

Safe operating area

High voltage test

See figure 4.

DS = 80 percent of rated V

(see

1.3)

Electrical measurements

See table III, steps 1, 2, 3, 4, 5, 6, and

Subgroup 6

Not applicable

Subgroup 7

Gate charge

3471

Condition A or B

Test 1

g(on)

On-state gate charge

2N6895

2N6896

2N6897

2N6898

2.2

4.7

117

See footnotes at end of table.

MIL-PRF-19500/565B

TABLE I. Group A inspection - Continued.

MIL-STD-750

Inspection 1/

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 7 - Continued.

Test 2

Gate to source charge

2N6895

2N6896

2N6897

2N6898

0.4

1.1

1.2

5.5

Test 3

Gate to drain charge

2N6895

2N6896

2N6897

2N6898

0.9

5.5

2.9

14.5

Reverse recovery time

3473

= £ 30 V; di/dt =100A/ms

= 4 A

2N6895

2N6896

2N6897

2N6898

340

375

500

750

1/ For sampling plan, see MIL-PRF-19500.

MIL-PRF-19500/565B

TABLE II. Group A, B, C and E electrical measurements. 1/ 2/ 3/

Step

Inspection

MIL-STD-750

Conditions

Bias condition C; I = - 1.0 mA dc,

Symbol

Limit

Unit

Min

Max

Method

3407

Breakdown voltage

drain to source

- 100

V dc

(BR)DSS

= 0 V

Gate to source voltage

(threshold)

3403

3411

-2.0

-4.0

V dc

³ V ; I = -0.25 mA dc

GS D

GS(th)1

Gate current

-100

-50

nA dc

Bias condition C; V

= + 20 Vdc

GSS1

and -20 V dc; V = 0 V

Drain current

3413

3421

mA dc

Bias condition C; V = -80 V dc;

DSS1

= 0 V

Static drain to source

“on”- state resistance

Ohm

= -10 V dc; condition A,

DS(on)1

pulsed (see 4.5.1)

2N6895

2N6896

2N6897

2N6898

3.65

0.6

0.3

0.2

= - 0.74 V dc

= - 3.8 V dc

= - 7.6 V dc

= - 15.8 V dc

Drain to source “on”-

state voltage

3405

= -10 V dc; condition A,

DS(on)

pulsed (see 4.5.1)

2N6895

2N6896

2N6897

2N6898

-6.0

-4.8

-6.0

= - 1.16 V dc

= - 6.0 V dc

= - 12.0 V dc

= - 25.0 V dc

Forward voltage

(source drain diode)

4011

-0.8

-1.6

Pulsed (see 4.5.1), V

= 0

= -1.16 A dc

= -6.04.0 A dc

= -12.0 A dc

= -25.0 A dc

2N6895

2N6896

2N6897

2N6898

Thermal response

3161

See 4.5.3

1/ The electrical measurements for appendix E, table VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table II herein, steps 1, 2, 3, 4, 5, 6, and 7.

b. Subgroup 4, see table II herein, steps 1, 2, 3, 4, 5, 6, 7, and 8.

c. Subgroup 5, see table II herein, steps 1, 2, 3, 4, 5, 6, and 7.

2/ The electrical measurements for appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table II herein, steps 1, 2, 3, 4, 5, 6 and 7.

b. Subgroups 3 and 6, see table II herein, steps 1, 2, 3, 4, 5, 6, 7 and 8.

3/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows:

a. Subgroups 2 and 3, see table II herein, steps 1, 2, 3, 4, 5, 6 and 7.

b. Subgroup 6, see table II herein, steps 1, 2, 3, 4, 5, 6, 7 and 8.

MIL-PRF-19500/565B

FIGURE 3. Transient thermal response.

MIL-PRF-19500/565B

FIGURE 3. Transient thermal response - Continued.

MIL-PRF-19500/565B

FIGURE 3. Transient thermal response - Continued.

MIL-PRF-19500/565B

FIGURE 3. Transient thermal response - Continued.

MIL-PRF-19500/565B

FIGURE 4. Maximum safe operating area.

MIL-PRF-19500/565B

FIGURE 4. Maximum safe operating area – Continued.

MIL-PRF-19500/565B

FIGURE 4. Maximum safe operating area – Continued.

MIL-PRF-19500/565B

FIGURE 4. Maximum safe operating area – Continued.

MIL-PRF-19500/565B

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When

actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to

ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity

within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is

available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting

the responsible packaging activity.

5.2 The requirements for packaging shall be in accordance with MIL-PRF-19500.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents must specify the following:

a. Issue of DODISS to be cited in the solicitation (see 2.1.1 and 2.2).

b. The lead finish as specified (see 3.4.1).

c. For die acquisition, specify the JANHC or JANKC letter version (see figure 2).

d. Type designation and quality assurance level.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of

award of contract, qualified for inclusion in Qualified Manufacturer's QML-19500 whether or not such products have actually been so

listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the

products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded

contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be

obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.

6.4 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue due to

the extensiveness of the changes.

Custodians:

Army - CR

Navy - EC

Preparing activity:

DLA - CC

Air Force - 11

NASA - NA

(Project 5961- 2084)

Review activities:

Army - AR, MI, SM

Navy - AS, CG, MC

Air Force - 13, 19, 85, 99

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of

requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to

waive any portion of the referenced document(s) or to amend contractual requirements.

I RECOMMEND A CHANGE:

3. DOCUMENT TITLE

1. DOCUMENT NUMBER

MIL-PRF-19500/565B

2. DOCUMENT DATE (YYMMDD)

990521

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JAN, JANTX,

JANTXV AND JANS

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial)

b. ORGANIZATION

d. TELEPHONE (Include Area Code)

Commercial

DSN

c. ADDRESS (Include Zip Code)

7. DATE SUBMITTED

(YYMMDD)

FAX

8. PREPARING ACTIVITY

b. TELEPHONE

Commercial

a. Point of contact: Alan Barone,

DSN

FAX

614-692-0510

850-0510

614-692-6939

alan_barone@dscc.dla.mil

c. ADDRESS : Defense Supply Center

Columbus, ATTN: DSCC-VQE, 3990 East

Broad Street, Columbus, OH 43216-5000

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221

Telephone (703) 767-6888 DSN 427-68880

DD Form 1426, Feb 1999 (EG)

Previous editions are obsolete

WHS/DIOR, Feb 99

JANTX2N6898 [ETC]

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