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KQ221K05 [ETC]

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 850V V(BR)CEO | 50A I(C) ; 晶体管| BJT电源模块|达林顿| 850V V（ BR ） CEO | 50A I（C ）\n
KQ221K05
元器件型号： KQ221K05
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 850V V(BR)CEO | 50A I(C)
晶体管| BJT电源模块|达林顿| 850V V（ BR ） CEO | 50A I（C ）\n

晶体 电源电路 晶体管
PDF文件： 总2页 (文件大小：135K)
下载文档：  下载PDF数据表文档文件
型号参数：KQ221K05参数
 查看货源

KQ221K75

 TRANSISTOR | BJT POWER MODULE | DARLINGTON | 850V V(BR)CEO | 75A I(C)

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11 ETC

KQ224503

 TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 30A I(C)

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17 ETC

KQ224505

 TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 50A I(C)

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13 ETC

KQ224575

 TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 75A I(C)

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32 ETC

KQB12P20

 200V P-Channel MOSFET

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20 KEXIN

KQB27P06

 60V P-Channel MOSFET

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8 KEXIN

KQB2N30

 300V N-Channel MOSFET

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6 KEXIN

KQB2N30

 2.1A, 300 V. RDS(ON) = 3.7 VGS = 10 V Low gate charge (typical 3.7nC) Fast switching

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10 TYSEMI

KQB2N50

 2.1A, 500 V. RDS(ON) = 5.3 VGS = 10 V Low gate charge (typical 6.0nC) Fast switching

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8 TYSEMI

KQB2N50

 500V N-Channel MOSFET

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3 KEXIN

KQB2N60

 600V N-Channel MOSFET

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9 KEXIN

KQB2N60

 2.4A, 600 V. RDS(ON) = 4.7 VGS = 10 V Low gate charge (typical 9.0nC) Fast switching

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10 TYSEMI

KQB2N80

 2.4A, 800 V. RDS(ON) = 6.3 VGS = 10 V Low gate charge (typical 12nC) Fast switching

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7 TYSEMI

KQB2N80

 800V N-Channel MOSFET

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6 KEXIN

KQB3N30

 300V N-Channel MOSFET

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10 KEXIN
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