KQB2N50 [TYSEMI]

2.1A, 500 V. RDS(ON) = 5.3 VGS = 10 V Low gate charge (typical 6.0nC) Fast switching; 2.1A , 500V的RDS ( ON) = 5.3 VGS = 10V低栅极电荷(典型值6.0nC )快速开关
KQB2N50
元器件型号: KQB2N50
生产厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述和应用:

2.1A, 500 V. RDS(ON) = 5.3 VGS = 10 V Low gate charge (typical 6.0nC) Fast switching
2.1A , 500V的RDS ( ON) = 5.3 VGS = 10V低栅极电荷(典型值6.0nC )快速开关

栅极 开关
PDF文件: 总2页 (文件大小:359K)
下载文档:  下载PDF数据表文档文件
型号参数:KQB2N50参数

KQB2N60

600V N-Channel MOSFET

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9 KEXIN

KQB2N60

2.4A, 600 V. RDS(ON) = 4.7 VGS = 10 V Low gate charge (typical 9.0nC) Fast switching

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10 TYSEMI

KQB2N80

2.4A, 800 V. RDS(ON) = 6.3 VGS = 10 V Low gate charge (typical 12nC) Fast switching

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7 TYSEMI

KQB2N80

800V N-Channel MOSFET

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6 KEXIN

KQB3N30

300V N-Channel MOSFET

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10 KEXIN

KQB3N30

3.2A, 300 V. RDS(ON) = 2.2 VGS = 10 V Low gate charge (typical 5.5nC) Low Crss(typical 6.0pF)

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12 TYSEMI

KQB3N40

400V N-Channel MOSFET

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2 KEXIN

KQB3N40

2.5A, 400 V. RDS(ON) = 3.4 VGS = 10 V Low gate charge (typical 6.0nC) Fast switching

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11 TYSEMI

KQB4N50

500V N-Channel MOSFET

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14 KEXIN

KQB4N50

3.4A, 500 V. RDS(ON) = 2.7 VGS = 10 V Low gate charge (typical 10nC) Fast switching

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14 TYSEMI

KQB4P40

400V P-Channel MOSFET

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4 KEXIN

KQB5N20

200V N-Channel MOSFET

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2 KEXIN

KQB5N20

4.5A, 200 V. RDS(ON) = 1.2 VGS = 10 V Low gate charge (typical 6.0nC)

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11 TYSEMI

KQB5N60

600V N-Channel MOSFET

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7 KEXIN

KQB5N60

5.0A, 600 V. RDS(ON) = 2.0 VGS = 10 V Low gate charge (typical 16nC)

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8 TYSEMI