MSD200-12 [ETC]
Glass Passivated Three Phase Rectifier Bridge;型号: | MSD200-12 |
厂家: | ETC |
描述: | Glass Passivated Three Phase Rectifier Bridge |
文件: | 总3页 (文件大小:184K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MSD200
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID
200 Amp
Applications
y
y
y
y
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Circuit
Features
+
y
y
y
Three phase bridge rectifier
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
~
MSD
~
~
-
y
y
UL E243882 approved
Module Type
TYPE
VRRM
800V
1200V
1600V
1800V
VRSM
900V
1300V
1700V
1900V
MSD200-08
MSD200-12
MSD200-16
MSD200-18
Maximum Ratings
Symbol
Conditions
Values
200
Units
A
ID
IFSM
i2t
Three phase, full wave Tc=100℃
t=10mS Tvj =45℃
2240
A
A2s
t=10mS Tvj =45℃
25000
Visol
Tvj
a.c.50HZ;r.m.s.;1min
3000
V
-40 to +150
-40 to +125
5±15%
5±15%
230
℃
Tstg
Mt
℃
To terminals(M6)
Nm
Nm
g
Ms
To heatsink(M6)
Weight
Module (Approximately)
Thermal Characteristics
Symbol
Conditions
Values
0.45
Units
℃/W
Rth(j-c)
Per diode
Rth(c-s)
0.025
℃/W
Module (Approximately)
Electrical Characteristics
Symbol
Values
Min. Typ. Max.
Conditions
Units
T=25℃IF =300A
-
1.50
1.65
V
VFM
IRD
Tvj=25℃VRD=VRRM
Tvj=150℃VRD=VRRM
0.5
6
mA
mA
-
-
Document Number: MSD200
Aug.31, 2010
www.smsemi.com
1
MSD200
Performance Curves
480
W
300
A
200
100
240
typ.
max.
25℃
Pvtot
- - -125℃
IF
0
0
0
ID
100
A 200
0
VF
0.5
1.0
1.5
V 2.0
Fig2. Power dissipation
Fig1. Forward Characteristics
0.5
3000
A
50HZ
℃/ W
Zth(j-C)
2250
0.25
1500
750
0
0
0.001
0.01
0.1
1.0
10
S 100
1
10
cycles 100
Fig4. Max Non-Repetitive Forward Surge
Current
Fig3. Transient thermal impedance
250
A
200
150
100
50
ID
0
0
Tc
50
100
℃ 150
Fig5.Forward Current Derating Curve
Document Number: MSD200
Aug.31, 2010
www.smsemi.com
2
MSD200
Package Outline Information
CASE:M3
Dimensions in mm
Document Number: MSD200
Aug.31, 2010
www.smsemi.com
3
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